RF MESFET S PARAMETERS Search Results

U73-U74

Abstract: 14E-14
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz

NE25337

Abstract: KR sot-143 NE25339 marking X_j sot u79 018
Contextual Info: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)

ic pt 2389

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C rs s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m T> LOW NF: 1.1 dB TYP AT 900 MHz

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25339 POW ER GAIN AND NOISE F IG U R E v s. DRAIN TO S O U R C E V O LTA G E V g s = 1 V , Id s = 10 mA, f = 900 MHz SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS LOW CRSS: 0.02 pF TYP HIGH GPS: 20 dB (TYP) AT 900 MHz

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz

DPDT SWITCHES

Abstract: dpdt rf switch
Contextual Info: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm

e2513

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 P O W ER GA IN A N D N O IS E F IG U R E vs. D R A IN T O S O U R C E V O LT A G E SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER GPS LOW C r s s : 0.02 pF TYP A n m •o HIGH GPS: 20 dB (TYP) AT 900 MHz

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE A S RF AMPLIFIER IN UHF TUNER NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE LOW CRSS: 0.02 pF TYP HIGH POWER GAIN: 20 d B (T YP ) A T 900 M Hz m *o LOW NF: 1.1 d B T Y P A T 900 M Hz

RF7000

Abstract: RCA 836 network resistor L1C8
Contextual Info: TRF7000 POWER GaAs MESFET SLWS027- JULY 1996 • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical - at 29 dBm Output Power, 30% PAE Typical • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively

RF MESFET S parameters

Abstract: MESFET S parameter C1C10 SP8T sp8t rf switch MESFET microwaves SP8T switch package ghz
Contextual Info: DESIGN FEATURE MMIC Switch GaAs MMIC Switch Is Designed Around Low-Capacitance A single-pole, eight-throw SP8T GaAs switch MESFETs uses low capacitance MESFETs to provide low insertion loss and input VSWR which is lower than competitive SP8Ts. Alan Noll

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: MIL-STD-883 Method 2010 pHEMT transistor RF MESFET S parameters MESFET 0.15 phemt p-hemt TGA8310 MIL-STD-883 method 2011 GaAs 0.15 pHEMT
Contextual Info: GaAs MMIC Space Qualification GaAs MMIC Testing TriQuint Semiconductor has advanced Lot Acceptance Testing LAT for High Reliability Applications of GaAs MMICs. A flowchart depicting the entire MMIC processing flow, including the Quality Conformance Inspection

the working of IC 4047

Abstract: IC 4047 working ic 4047 IC 4047 BE data sheet of IC 4047 RF MESFET S parameters pindiode switch
Contextual Info: TUTORIAL DISTORTION IN VOLTAGE-VARIABLE ATTENUATORS W ith bandwidth a precious commodity, designers are faced with the challenge of providing increasingly larger amounts of information to a growing number of users. This information can be in many forms. Internet browsing, short messaging, e-mail and fax applications, to name just

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

752 J 1600 V CAPACITOR

Abstract: RF MESFET S parameters MESFET S parameter network resistor P0* RF SOT89 752 C 1600 V CAPACITOR
Contextual Info: TRF7000 POWER GaAs MESFET ^ _ SLW S027-JULY 1996 • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical

RF MESFET S parameters

Abstract: TQTRX
Contextual Info: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 55236 mesfet
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

GaAs MMIC Based Control Components with Integral Drivers

Abstract: RF MESFET S parameters DC bias of gaas FET MESFET MASW6010 GaAs MesFET Application note transistor mesfet
Contextual Info: GaAs MMIC Based Control Components with Integral Drivers M537 V4 Introduction This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the

Contextual Info: 19-3985; Rev 2; 9/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

4.1 amplifier circuit diagram

Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

RF MESFET S parameters

Abstract: 1 transistor fm transmitter 5 watt "RF Power Amplifier" wireless mobile charging through microwaves UPP9401 GaAs MESFET amplifier Microsemi micronote 703 irfc20
Contextual Info: MicroNote 703 Silicon PIN Diode and GaAs MESFET Switches and Their Effects On Linearity of Digital Communications Systems William E. Doherty, Jr. Microsemi Corp. The RF sections of Analog FM and Digital Radios primarily differ in the required linearity. If the transmitter

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM 819d
Contextual Info: 19-3985; Rev 3; 11/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A