RF MESFET S PARAMETERS Search Results

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz

DPDT SWITCHES

Abstract: dpdt rf switch
Contextual Info: Ap/K M/A-COM ADV SEMICONDUCTOR 27E D SbM21Ö3 G QD D 30 S Ô MA4GM400C-500 GaAs DPDT RF Switch Features • CASCADABLE ■ LOW INSERTION LOSS ■ MULTIMODE OPERATION THD OF -6 0 dBc @ 10 KHz OBTAINABLE IN ViC, V2C MODE Description The MA4GM400C is a GaAs MMIC MESFET chip configured as a

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE A S RF AMPLIFIER IN UHF TUNER NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE LOW CRSS: 0.02 pF TYP HIGH POWER GAIN: 20 d B (T YP ) A T 900 M Hz m *o LOW NF: 1.1 d B T Y P A T 900 M Hz

RF7000

Abstract: RCA 836 network resistor L1C8
Contextual Info: TRF7000 POWER GaAs MESFET SLWS027- JULY 1996 • High Power Efficiency - at 35 dBm Output Power, 53% PAE Typical - at 29 dBm Output Power, 30% PAE Typical • 3.6-V and 4.8-V Operating Voltage for AMPS/NADC and GSM Cellular Telephone Applications Respectively

RF MESFET S parameters

Abstract: MESFET S parameter C1C10 SP8T sp8t rf switch MESFET microwaves SP8T switch package ghz
Contextual Info: DESIGN FEATURE MMIC Switch GaAs MMIC Switch Is Designed Around Low-Capacitance A single-pole, eight-throw SP8T GaAs switch MESFETs uses low capacitance MESFETs to provide low insertion loss and input VSWR which is lower than competitive SP8Ts. Alan Noll

the working of IC 4047

Abstract: IC 4047 working ic 4047 IC 4047 BE data sheet of IC 4047 RF MESFET S parameters pindiode switch
Contextual Info: TUTORIAL DISTORTION IN VOLTAGE-VARIABLE ATTENUATORS W ith bandwidth a precious commodity, designers are faced with the challenge of providing increasingly larger amounts of information to a growing number of users. This information can be in many forms. Internet browsing, short messaging, e-mail and fax applications, to name just

Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

RF MESFET S parameters

Abstract: TQTRX
Contextual Info: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant

GaAs MMIC Based Control Components with Integral Drivers

Abstract: RF MESFET S parameters DC bias of gaas FET MESFET MASW6010 GaAs MesFET Application note transistor mesfet
Contextual Info: GaAs MMIC Based Control Components with Integral Drivers M537 V4 Introduction This application note describes the fundamental operation and features of a new series of control components. These switches comprise a family of devices that use GaAs FET MMIC technology for the

Contextual Info: 19-3985; Rev 2; 9/08 KIT ATION EVALU E L B A IL AVA Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

4.1 amplifier circuit diagram

Abstract: class A push pull power amplifier AC 5018 class B push pull power amplifier mesfet datasheet by motorola pn junction diode ideality factor alarm clock sweep function ic dxp 15 philips ic clock alarm 28 pins STANDARD PIN DETAILS OF 2N3904 NPN TRANSISTOR
Contextual Info: 19-3985; Rev 1; 3/07 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

2N3904

Abstract: MAX11014 MAX11014BGTM MAX11015 MAX11015BGTM
Contextual Info: 19-3985; Rev 0; 2/06 Automatic RF MESFET Amplifier Drain-Current Controllers The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A

152900

Abstract: NEC Microwave Semiconductors
Contextual Info: PRELIMINARY DATA SHEET US BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES Tc= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH UNEAR GAIN: 11.5 dB V dsx Drain to Source Voltage V

NE6500496

Abstract: 173300 NEC Microwave Semiconductors
Contextual Info: L&S BAND MEDIUM POWER GaAs MESFET NE6500496 ABSOLUTE MAXIMUM RATINGS FEATURES TC= 25 °C unless otherwise noted • HIGH OUTPUT POWER: 4 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 11.5 dB VDSX Drain to Source Voltage V 15 • HIGH EFFICIENCY (PAE): 45%

Contextual Info: 1C Foundry Facilities/Capabilities Features • MBE and Ion Implant Technologies • Three Optimized Processes HI2 - Low N oise/H igh Efficiency SI1 - Switch/Low Loss PE3 - Pow er/H igh Efficiency • Power and Low Noise On a Single Wafer • Design Service Available

siliconix vmp4

Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Contextual Info: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc

RF2316

Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
Contextual Info: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data

9435 GM

Abstract: AFM02N6
Contextual Info: 03Alpha Surface Mount GaAs MESFET AFM02N6-032 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel

MPS 808

Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

ap910401

Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology

a 4x transistor

Abstract: RF MESFET S parameters 500565 NES1823P-100 NES1823
Contextual Info: PRELIMINARY DATA SHEET 100W L-BAND TWIN POWER GaAs MESFET NES1823P-100 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 100 W TYP HIGH LINEAR GAIN: 11 dB TYP HIGH DRAIN EFFICIENCY: 50 % TYP @ VDS = 10 V, ID = 6 A, f = 2.2 GHz USABLE IN PUSH-PULL OR BALANCED

MPS 808

Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

RF MESFET S parameters

Abstract: high power microwave transmitter NES1823P-30
Contextual Info: PRELIMINARY DATA SHEET 30W L-S BAND PUSH-PULL POWER GaAs MESFET FEATURES • • • • NES1823P-30 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 30 W TYP HIGH POWER ADDED EFFICIENCY: 40 % TYP @ VDS = 10 V, ID = 4 A, f = 2.2 GHz HIGH LINEAR GAIN: 13 dB TYP