Socket S1g1
Abstract: AMD Turion 64 Mobile Technology AM2 amd amd AM2 opteron pin package HTC B834 Socket S1g1 Processor Functional AMD SEMPRON 3000 socket 754 DIAGRAM SEMPRON Socket 754 AM2 31117 CMPXCHG16B
Contextual Info: BIOS and Kernel Developer's Guide for AMD NPT Family 0Fh Processors Publication # 32559 Revision: 3.16 Issue Date: November 2009 2005-2009 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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socket s1g1amd turion 64 mobile technologyam2 amdamd am2 opteron pin package+6htc b834socket s1g1 processor functionalamd sempron 3000 socket 754 diagramsempron socket 754am2 31117cmpxchg16b
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SA6954
Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
Contextual Info: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages Single 1.8 volt read, program and erase (1.70 to
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s29wsxxxns29ws256ns29ws128ns29ws064n+416-bitsa6954ws128nffc00
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Contextual Info: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion
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JS28F256P33
Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
Contextual Info: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst
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52mhz32-kbyte128-kbyte130nm+1664-mbitrd48f2000p0xbq0128-mbitrd48f3000p0xbq0256-mbitrd48f4000p0xbq0js28f256p33pc28f256p33pf48f2000p0xbq0pc28f128p33b85js28f256p33b95pc28f128p33rc48f4400p0tb00rc28f640p33b85pc28f128p33t85pc28f640p33b85
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28F256L30
Abstract: 28F128L30 28F640L30
Contextual Info: 1.8 Volt Intel StrataFlash Wireless Memory with 3.0 Volt I/O L30 28F640L30, 28F128L30, 28F256L30 Datasheet Product Features • High performance Read-While-Write/Erase — 90 ns initial access — 50MHz with zero wait state, 17 ns clock-to-data output synchronous-burst mode
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28f640l3028f128l3028f256l3050mhz+316k-word64k-wordcom/design/flcomp/packdata/298049
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C000H-DFFFH
Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
Contextual Info: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation
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mx29lw128t/b/u/d128m-bitjan/27/2003mar/28/2003+9may/16/2003may/29/2003c000h-dfffh24blocksfb0000h-fbffffh9f0000h-9fffffhc10000h-c1ffffhff4000h-ff5fffh8a0000h8affffh
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JESD97
Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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m29dw128ftsop5632-word16mbit+448mbittbga64jesd976c80
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SA452
Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
Contextual Info: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this
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am29lv2562ms29gl512nsa452sa336+7sa424120rsa487ee8000a78000a7ffffc58000c5ffffsa4871
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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s71ws512ne0bfwzzs71ws512s29ws256n54mhz+2128mb96-ball
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M29W128FL
Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
Contextual Info: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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m29w128fhm29w128flwords/16tsop56+532-word64-bytesmemory protection devicesjesd97m29w128f
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a6583
Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Contextual Info: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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m30l0r8000t0m30l0r8000b054mhza6583+2cr10j-std-020b
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M50FLW080
Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
Contextual Info: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)
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m50flw080am50flw080b64kbyte33mhz+3m50flw080plcc32tsop32
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FL128P
Abstract: SPANSION FL128P
Contextual Info: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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samsung electronics ba41
Abstract: BA175
Contextual Info: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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k8c56256mba0-a23000000fh+5000001fh000002fh0000000hsamsung electronics ba41ba175
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NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256
Contextual Info: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
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JESD97
Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)
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m29dw128ftsop5632-wordtbga64+616mbit48mbitjesd97esn 234d25785pwa
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MB90910
Abstract: BGR21 MB2147-20
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07–13755–2E 16-bit Microcontroller CMOS F2MC-16LX MB90910 Series MB90911AS/F912BS/V950AMAS • DESCRIPTION The MB90910 series, loaded 1 channel FULL-CAN controller and Flash ROM, is general-purpose FUJITSU 16-bit microcontroller designing for automotive and industrial applications. Its main feature is the on-board
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16-bitf2mc-16lxmb90910mb90911as/f912bs/v950amas+2bgr21mb2147-20
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IS29GL256
Contextual Info: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns
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is29gl25632768k16384k16-bit+58-word/16-byte32-word/64-byte128-word/256-byte8-word/16byteis29gl256-jtle
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92HD89f
Abstract: 7511 AUDIO AMPLIFIER CIRCUIT DIAGRAM no291
Contextual Info: DATASHEET TEN CHANNEL CONTENT PROTECTION HD AUDIO CODEC 92HD89F Low Power Optimized for ECR15b and EuP Description Features The 92HD89F is a low power optimized, high fidelity, 10-channel audio codec compatible with Intel’s High Definition HD Audio Interface.
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92hd89fecr15b10-channel24-bit+3192khz7511 audio amplifier circuit diagramno291
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MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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mx29gl256fpm154464kw/128kb16-byte/8-word+1164-byte/32-word128-word100mamx29gl256flt2i-90qmx29gl256fhtmx29gl256mx29gl256fht2i-90qmx29gl256flmx29gl256fh29gl256mx29gl256flxfi-90q
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S25FL129
Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
Contextual Info: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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s25fl129p128-mbit104-mhzs25fl129+8s25fl129p0fl129pfootprint wsons25fl128p sa255 sckfab024footprint wson-8reader sa223fac024
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asme SA388
Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M,S29GL128M,S29GL064M,S29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ
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s29gl-ms29gl256ms29gl128ms29gl064ms29gl032ms29gl128ms29gl128ns29gl256ms29gl256n+14s29glxxxn00-b-5s29gl032mlaa064asme sa388gl128ma2113s29gl256e78000s29gl128ntsop56 s29gl128nsa32sa35s29glxxxmbga-63
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MB90F997
Abstract: 007C00 MB90F997JBS
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS07-13753-3E 16-bit Microcontrollers CMOS F2MC-16LX MB90990 Series MB90F997JBS/F997MBS/ MB90V950AJAS/V950AMAS • DESCRIPTION The MB90990-series, loaded 1 channel FULL-CAN interface and Flash ROM, is general-purpose FUJITSU
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ds07-13753-3e16-bitf2mc-16lxmb90990+6mb90f997jbs/f997mbs/mb90v950ajas/v950amasmb90990-seriesmb90f997007c00mb90f997jbs
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120R
Abstract: C8800
Contextual Info: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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