RF 24N Search Results
RF 24N Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| CLF1G0035-100P | Rochester Electronics LLC | CLF1G0035-100 - 100W Broadband RF power GaN HEMT |
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| LDJ18829M24AH011 | Murata Manufacturing Co Ltd | Directional Coupler | |||
| LDJ18829M24AG010 | Murata Manufacturing Co Ltd | Directional Coupler | |||
| LDJ0Q2G4519CK003 | Murata Manufacturing Co Ltd | Directional Coupler |
RF 24N Price and Stock
Panasonic Electronic Components ELJ-RF24NJFBThe ELJ-RF24NJFB is a high-frequency non-magnetic core chip inductor with a nominal inductance of 24 nH in a 1005 (0402) package. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELJ-RF24NJFB | 5,000 |
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RF 24N Datasheets Context Search
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Xbee series 2
Abstract: distance vector routing XB24-B XB24-BCIT-004 interfacing rs232 to XBEE XB24-BWIT-004 XBEE BY MAXSTREAM XB24-BWIt-002 XBee application notes CPRMSL20-D-0-1
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xb24-bxit-00x2007digiinternationalxbee series 2distance vector routing+8 | |
Xbee series 2
Abstract: CPRMSL20-D-0-1 Xbee Pro Series 2 pin diagram and of xbee Xbee series 2 RSSI XBee application notes XBee XBee-PRO distance vector routing XBEE BY MAXSTREAM
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xb24-bxit-00xxbee series 2cprmsl20-d-0-1xbee pro series 2+7 | |
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Contextual Info: XBee ZNet 2.5/XBee-PRO® ZNet 2.5 OEM RF Modules XBee ZNet 2.5/XBee PRO Znet 2.5 OEM RF Modules ZigBee Networks RF Module Operation RF Module Configuration Appendices Product Manual v1.x.4x - ZigBee Protocol For OEM RF Module Part Numbers: XB24-BxIT-00x |
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xb24-bxit-00x | |
1846A-XBEEPRO2
Abstract: 4214a-xbee2 Xbee Pro Series 2 xbee2 4214A-XBEE2 PIN NUMBER 4214a-xbee Xbee Pro XBee 4214A 4214a XBEE BY MAXSTREAM xbee pro znet
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xb24-bxit-00x1846a-xbeepro24214a-xbee2xbee pro series 2+7 | |
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Contextual Info: 24N-50-3-12/133 : RF Coaxial Cable Connectors - product data 24N-50-3-12/133; 24N-50-3-12/133 Page 1 of 2 HOME GROUP SITE DOWNLOADS REQUESTS SEARCH NEWSLETTER MARKETS PRODUCTS ABOUT US Search for type 24N-50-3-12/133 RF product search RF Products Fiber Optic Products |
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24n-50-3-12/1332002/95/ecn-50-3-12/133mil-std-348a/304+1 | |
Data Cable AssemblyContextual Info: 24N-50-3-12/133 : RF Coaxial Cable Connectors - product data 24N-50-3-12/133; 24N-50-3-12/133 Page 1 of 2 HOME GROUP SITE DOWNLOADS REQUESTS SEARCH NEWSLETTER MARKETS PRODUCTS ABOUT US Search for type 24N-50-3-12/133 RF product search RF Products Fiber Optic Products |
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24n-50-3-12/1332002/95/ecn-50-3-12/133mil-std-348a/304+2 | |
133-n
Abstract: 24N50 coaxial cable 24N-50-3-12 24N-50-3 133n
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24n-50-3-12//\\bnsndv35\data\bitting\cfprocess\bae\08052007\husu\24n-50-3-1220coaxial+6 | |
24N-50-3-12
Abstract: 24N50
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24n-50-3-12mil-std-348a/304//\\bnsndv35\data\bitting\cfprocess\bae\08052007\husu+2 | |
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Contextual Info: BAR63V-02V VISHAY Vishay Semiconductors RF PIN Diode - Single in SOD-523 Description 1 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-02V was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than |
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bar63v-02vod-523od523d-74025+1 | |
TDA7515TR
Abstract: JESD97 LQFP44 TDA7515
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tda7515lqfp44tda7515trjesd97 | |
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Contextual Info: TDA7515 RF front-end for AM/FM-DSP car radios with IF sampling Features • RF AGC generation by RF and IF detection ■ I/Q Mixer for FM IF 10.7MHz with image rejection and programmable IF tank adjust for FM and AM ■ Preamplifier and mixer for IF 10.7MHz AM |
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tda7515lqfp44 | |
diode CODE 51n
Abstract: Wire wound chip inductor size 0603 1608 on high S-1360 1040 marking inductor ferrite core inductor
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270nh470nh680nh100nh+5 | |
L-07WR12JV4T
Abstract: L-07W3N3JV4T L-07W51NJV4T
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l-07wr12jv4tl-07w3n3jv4tl-07w51njv4t | |
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Contextual Info: RF Wirewound Chip Inductors These high frequency High-Q chip inductors feature a monolithic body made of low loss ceramic wound with wire to achieve optimal high frequency performance. These RF chip inductors are compact in size and are provided on tape and reel packaging which makes them ideal for high volume RF |
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cor02100nh470nh270nh+1 | |
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RF Wirewound Chip InductorsContextual Info: RF WIREWOUND CHIP INDUCTORS These high frequency High-Q chip inductors feature a monolithic body made of low loss ceramic wound with wire to achieve optimal high frequency performance. These RF chip inductors are compact in size and are provided on tape and reel packaging which makes them ideal for high volume RF |
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rf wirewound chip inductors | |
k840Contextual Info: RF Wirewound Chip Inductors These high frequency High-Q chip inductors feature a monolithic body made of low loss ceramic wound with wire to achieve optimal high frequency performance. These RF chip inductors are compact in size and are provided on tape and reel packaging which makes them ideal for high volume RF |
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cordl0603100nh680nh270nh+2 | |
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Contextual Info: RF WIREWOUND CHIP INDUCTORS These high frequency High-Q chip inductors feature a monolithic body made of low loss ceramic wound with wire to achieve optimal high frequency performance. These RF chip inductors are compact in size and are provided on tape and reel packaging which makes them ideal for high volume RF |
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Contextual Info: Wideband, Dual Rx Mixers with Integrated IF Amplifiers ADRF6658 Data Sheet FEATURES GENERAL DESCRIPTION Wideband, dual-channel, active downconversion mixers Low distortion, fast settling, IF DGAs RF input frequency range: 690 MHz to 3.8 GHz Programmable baluns on RF inputs |
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adrf6658mo-220-wkkd08-16-2010-b48-lead+4 | |
sdram cmos
Abstract: K4S28163LD
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k4s28163ld-rf8mx16128mb133mhz+5 | |
LP SDRAMContextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RF(R) Preliminary CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR support, -25°C ~ 70°C Operation) Revision 0.3 October 2001 Rev. 0.3 Oct. 2001 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RF(R) Preliminary |
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k4s64163lf-rf4mx1654csp200us+1 | |
64Mb samsung SDRAMContextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S64163LF-RF(R) CMOS SDRAM 4Mx16 Mobile SDRAM (TCSR & PASR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S64163LF-RF(R) CMOS SDRAM Revision History |
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k4s64163lf-rf4mx1654csp64mb samsung sdram | |
mobile dramContextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S28163LD-RF(R) CMOS SDRAM 8Mx16 Mobile SDRAM (PASR & TCSR, -25°C ~ 70°C Operation) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S28163LD-RF(R) CMOS SDRAM Revision History |
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k4s28163ld-rf8mx16128mb133mhz+3 | |
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Contextual Info: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile SDRAM (TCSR & PASR option support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RF(R) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target) |
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k4s56163lc-rf16mx16256mb | |
sdram 4 bank 4096 16
Abstract: K4S56163LC K4S56163LC-RF
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k4s56163lc-rf16mx16256mbsdram 4 bank 4096 16+1 | |