RESISTOR BSIM3 Search Results

CMOS Process Family

Abstract: 0.6 um cmos process BSIM3 resistor bsim3 bsim3 model metal oxide in capacitor xfab X-Fab
Contextual Info: 0.8 µm CMOS Process Family CX08 State-of-the-art 5V 0.8µm CMOS Technology Main Process Flow with additional options: P substrate Analog elements: linear capacitor, high ohmic resistor High voltage module: different n- and p-type, MOSFETs up to 50V, N substrate on demand

ks fuses

Abstract: 0.13um standard cell library analog delay ms BSIM3 10-BIT
Contextual Info: ASIC Mixed-Signal and Analog Macros M5 M4 M3 Capacitor Resistor M2 M1 Analog VSS P-well N-well Deep N-well P-well N-well Epi Digital VSS/Gnd Analog Circuit Digital Circuit ▼ P-Sub Features ▼ • Leading-edge 0.25µm, 0.18µm, 0.13µm, 90nm, 65nm technologies, with a choice of standard twin-well or high

ARM SRAM compiler

Abstract: poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
Contextual Info: 0.25 µm CMOS Process Family FC025 0.25 µm CMOS process for 2.5V logic and mixed-signal applications Main Process Features with 3.3V or 5V I/O Single Poly and up to 5 Metal Layers FC025 Process section Pad Well Architecture: Retrograde Twin Well Nitride Pad

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

0.18 um CMOS

Abstract: CMOS Process Family varactor diode parameter "X-Fab" 0.18 um CMOS Process rpp1k1 ne3 MOS3ST BEol 0.18-um inductance varactor ghz
Contextual Info: 0.18 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XC018 RF CMOS Modular 0.18 µm CMOS process available for RF and mixed-signal/analog applications Module Overview CORE MOSST Poly Gate Cross Section Standard 1.8V MOS module MOSLP Low power 1.8V MOS module

0.6 um cmos process

Abstract: bsim3 Trench MOS Schottky Rectifier MICRON POWER RESISTOR Mos BSIM3 SOI pmos 60V-20 MICRON RESISTOR Mos MOS RM3 P-Channel Depletion Mosfets
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

bsim3v3

Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Contextual Info: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional

bsim3 model

Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
Contextual Info: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications

vertical pnp bjt

Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing

spice model Tunnel diode

Abstract: dpsN TUNNEL DIODE spice model
Contextual Info: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation

CMOS

Abstract: MICRON RESISTOR Mos MOS RM3 power BJT PNP spice model spice gate drive module mos rm3 data ESD "p-well" n-well" CMOS spice model ne3 MOS3ST varactor diode SPICE model
Contextual Info: 0.18 µm CMOS Process XC018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular RF enabled CMOS Logic and Analog Technology 0.18-micron drawn gate length N-well process, modules are also available for metal-insulatormetal capacitors, high resistive poly, dual gate

CMOS

Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
Contextual Info: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.

0.6 um cmos process

Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode
Contextual Info: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in

CMOS

Abstract: pmos4
Contextual Info: 0.8 µm CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom designs for Industrial, Tele­com­mu­ni­cation and Automotive products - including the 42V board net.

polysilicon resistor

Abstract: PMOS IMD2 transistor
Contextual Info: Mitel Semiconductor 0.6µm BiCMOS Process …is a double-polysilicon trench isolated bipolar process optimised for rf applications in the range 900MHz to 2.4GHz, coupled with 0.6µm CMOS for dense logic functions. Emitter Base Collector fT vs IC min geometry npn

cmos transistor 0.35 um

Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Contextual Info: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

bsim3

Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
Contextual Info: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature

0.18 um CMOS parameters

Abstract: poly silicon resistor pepi c 0.18 um CMOS technology World transistors
Contextual Info: 1.0 µm CMOS Process XC10 1.0 µm Mixed Signal CMOS Technology Schematic cross section NMOS Poly-Poly-CAP Broad variety of combinable process elements available: PMOS - Double poly capacitor Source Drain Source Drain Gate n+ - High ohmic and low TC resistors

NMOS depletion pspice model

Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

OPA03

Abstract: OPA02 128 x 1 multiplexer hep silicon diode DMILL BGP02 calorimeter sensor CIRCUIT inverter grade SCR BGP01 digital SUN SENSOR cmos detector space radiation
Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in

OPA03

Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in