XFAB Search Results

XH018

Contextual Info: 0.18 m Process Family: XH018 0.18 Micron Modular Analog Mixed HV Technology DESCRIPTION The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six metal layers 0.18 micron

CMOS

Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

CLDCCJ

Abstract: THA1006 THA1008 vhdl code for 8-bit serial adder CMOS 4000 Series family databook "X-Fab" Core cell library books schmitt trigger cmos cmos 4000 series databook LQFP-44 mQFP-80 to plcc 48
Contextual Info: Gate Array Series THA1006 Description The THA1006 Gate Array Series is a CMOS metal programmable array product targeting high performance, low cost and high complexity applications. The THA1006 series is based on 0.6 micron 2 or 3 layer metal CMOS technology.

DC04 display

Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
Contextual Info: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79

mos rm3 data

Abstract: MOS RM3 BSIM3V3 XH035 RM4L bsim3 dw-mo MICRON POWER RESISTOR Mos Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and

IC 2 5/IRDA

Contextual Info: U2720-XS1460/U2720XS1462 IrDA FIR Transceiver with RC high power option Data Sheet Rev. 3.4 / June 2009 Data Sheet Preliminary IrDA FIR Transceiver with RC high power option U2720-XS1460/U2720-XS1462 Brief Description The micro sized IC series is compliant to Infrared

XH018

Abstract: sonos MOS RM3 model values for 0.18 micron technology cmos 0.18 um CMOS parameters analog devices transistor tutorials CMOS spice model bsim3 0.18 micron parameters EPI EEPROM bsim3 circuit model
Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six

Discrete absolute pressure sensors

Abstract: Design Support Absolute Pressure Sensors Absolute Pressure Sensor MEMS pressure sensor wafer sensors pressure sensor sp 20 0 to 10 bar analog pressure sensor "X-Fab"
Contextual Info: MEMS Process Surface Micromachining Technology for Discrete Absolute Pressure Sensors MIXED-SIGNAL FOUNDRY EXPERTS XM-SP XM-SP Technology Schematic cross section Process - Surface micromachining technology metal oxide oxide p-imp p-imp passivation passivation

cmos transistor 0.35 um

Abstract: XH035 xh03 CMOS Process Family nmos transistor 0.35 um analog hv 102 Ultrasonic Piezoelectric poly silicon resistor inkjet module power mos transistor selection
Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XH035 Analog, RF and 100V High Voltage Options with Non Volatile Memory Modular 0.35 µm CMOS process with 4 different process cores for analog/mixed-signal and high voltage applications. Modules Overview

XH035

Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target

vertical pnp bjt

Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing

CMOS Process Family

Abstract: 0.6 um cmos process BSIM3 resistor bsim3 bsim3 model metal oxide in capacitor xfab X-Fab
Contextual Info: 0.8 µm CMOS Process Family CX08 State-of-the-art 5V 0.8µm CMOS Technology Main Process Flow with additional options: P substrate Analog elements: linear capacitor, high ohmic resistor High voltage module: different n- and p-type, MOSFETs up to 50V, N substrate on demand

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

0.6 um cmos process

Abstract: CMOS Process Family xc06 transistor parameters DSASW0041938 XC-06 "X-Fab"
Contextual Info: 0.6 µm CMOS Process Family XC06 With Embedded EEPROM, Flash and High Voltage Options Modular 0.6 µm CMOS process with the possibility to add a Main Process Features wide variety of medium and high voltage MOS transistors, passive elements and embedded EEPROM and Flash

Contextual Info: CMOS Process X-fab OPERATING LIFE @ TA = +125C AT RATED VOLTAGE ( Q202-Q403 ) Family Device Lot # Package Vcc Qty Time Point Failures Act Act Act Total Hrs Fails Hrs Fails Hrs Fails Dev. Hrs Microprocessor Reset Circuit MIC810 MIC810 MIC810 MIC810 MIC810

Contextual Info: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to

transistor smd marking za sot-23

Abstract: MOSFET TRANSISTOR SMD MARKING CODE ZA TRANSISTOR SMD MARKING CODE KE sot-23 MARKING CODE ZA TRANSISTOR SMD MARKING CODE TK SMD MARKING CODE sdp intersil MARKING CODE ZA RF TRANSISTOR SMD MARKING CODE TK TW6817-LA1-GR smd transistor marking code XC
Contextual Info: Ordering Nomenclature I NTERSIL N OMENCLATURE GUIDE Intersil Nomenclatures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ISL Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

msop10

Abstract: 8 MSOP MIC2159 MIC2169A MIC3775 MIC384 MIC4830 MIC5239 MICRF112 SY88345BLEY
Contextual Info: MSOP PACKAGE REL MONITOR DATA High Temperature Storage Life +150 deg C, 1000 hours Device Lot No Pkg MIC3775 YMM SY100EPT22VKG SY88903VKG MIC5239 YMM MIC4830 YMM MICRF112 YMM MIC2169A YMME MIC2159 YMM SY88345BLEY SY88903VKC MIC384 1YMM SY88903VKC SY88903ALKI

bsim3 0.18 micron parameters

Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width
Contextual Info: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six

0.6 um cmos process

Abstract: CMOS Process Family hv 082 1P2M pmos depletion nmos 0.13 um CMOS nmos pmos array trench mos HV diode
Contextual Info: 0.6 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XT06 SOI CMOS with extended HV Technology Modular 0.6 µm Trench Isolated SOI CMOS process for analog/mixed-signal and high-voltage applications. Module Overview CORE CORE The process offers reduced parasitics which results in

bsim3

Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
Contextual Info: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature

CMOS spice model

Abstract: MOS RM3 Spice model inductor BSIM3v3.2 XH035 XH035 library w10 jfet mos rm3 data PMOS "X-Fab" Core cell library
Contextual Info: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target

hv2300

Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
Contextual Info: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom

MOS RM3

Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
Contextual Info: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and