1P3M Search Results

INTERMETal diode

Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

1P3M

Abstract: 530 transistor
Contextual Info: 0.6um 1P3M Logic 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical) 145Å

NMOS transistor 0.18 um CMOS

Abstract: 1P3M LOCOS
Contextual Info: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

Vg 5V

Contextual Info: 0.5um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS

Contextual Info: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side

Contextual Info: 0.6um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)

LOCOS

Abstract: DSASW0024855 1P3M
Contextual Info: 0.5um 1P3M Logic 5V updated in 2005.03.16 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)

Contextual Info:
      0.8um 1P3M High Voltage 40V / 40V
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1P3M

Contextual Info:
      0.5um 1P3M Logic 3.3V
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Contextual Info:
      0. 5um 1P3M Embedded Flat ROM 5V
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Contextual Info:
      0.6um 1P3M High Voltage 12V / 12V
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a2030

Abstract: 3CH100 Q030 PI3L110 PI3L301D PI3L301DA 3CH400
Contextual Info: Date: Subject: March 15, 2006 Update Hynix CMOS 0.5 m 1P3M Wafer Fab Reliability Report - PI3L301D A total of 134 units successfully completed Dynamic High Temperature Operating Life (DHTOL) test with no failures for the PI3L301D device type. The units were tested for 3000 hours at a temperature of 150°C. This

Contextual Info:
      0.6um 1P3M High Voltage 16V / 16V
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1P3M

Abstract: resistance
Contextual Info:
      0.5um 1P3M Logic 5V
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PI74AUC16244

Abstract: PI74AUC16245 PI74SSTVF16857 PI74SSTVF16859 PI74SSTVF32852
Contextual Info: Date: August 5, 2005 Subject: Pericom Reliability Qualification – CSM-S Fab 2’s CMOS, 0.25 µm, 2.5V, 1P3M Process Chartered Semiconductor Manufacturing – Singapore Fab 2’s CMOS, 0.25-µm, 2.5 volt, Single Poly/Triple Metal 1P3M process has been qualified to Pericom’s standard die level process

transistor 778

Contextual Info:
      0. 6um 1P3M Embedded Flat ROM 5V
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1P3M

Contextual Info:
      0.6um 1P3M Logic 5V
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1P3M

Contextual Info: 0.5um 1P3M Logic 3.3V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ ƒ Starting material Well Structure P-type (100), 9~12 Ω/□ CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS

vertical pnp bjt

Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
Contextual Info: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing

CMOS

Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular

hall sensor 333

Abstract: 45 V dc motor drive circuit IP3M05 1P3M amplifiers circuit diagram IP3M06 IP3M13
Contextual Info: W I W M IE B 3-Phase DC Brushless Motor Control/Drive Circuits POWER , . SEM ICO NDUCTO RS LTD STANDARD • Internal current sensing • Short circuit protection • Thermal shutdown • Single pin loop filter • Minimum external components • Reference inputs to 6 MHZ

228 AN

Abstract: 1P2M CARSEM PI74SSTV16857 TSSOP56
Contextual Info: Date: May 10, 2004 - Update Subject: CSMS Fab 2 CMOS 0.35mm Wafer Fab Reliability Report - PI74SSTV16857 This product is manufactured for Pericom by CSM-S, Fab 2 facility in Singapore, using a 0.35-micron, CMOS, 1P2M, 3.3-volt process that has been qualified for several years. It generically covers CSMS’s

HYNIX lot date code

Abstract: 363P 686u 747p 415P 1P2M PI5V330 PI5V331 PI5C3125 PI5C3126
Contextual Info: 3545 North First St. • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 04-07 Date Issued: April 8, 2004 Product(s) Affected: PI5C3257, PI5C33X257, and PI5V330 Manufacturing Location Affected: Hynix Semiconductor, Korea Date Effective: July 8, 2004

733P

Abstract: HP4156 A55B 1P3M A648 AAB0545XG PI3L301D PI3V512 A22B1 HP11667A
Contextual Info: 3545 North First Street • San Jose, CA 95134 • USA PRODUCT/PROCESS CHANGE NOTICE PCN PCN Number: 05-22 Date Issued: December 21, 2005 Product(s) Affected: PI3V512 (all package types) Manufacturing Location Affected: N/A Date Effective: March 21, 2006 – standard 90 day waiting period