RECTIFIER DIODE B12 Search Results

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

DIODE B12

Abstract: B12 diode ERB12-02 Diode Mark B12 DIODE 1.0A 1000V ERB12-10 rectifier diode B12 b12 marking erb12 general purpose diode marking code -06
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

ERB12-02

Abstract: Diode Mark B12 h2 marking general purpose diode marking code -06 ERB12-10
Contextual Info: ERB12 1.0A (100V to 1000V / 1.0A ) Outline drawings, mm GENERAL USE RECTIFIER DIODE ø3.0 ø0.8 5.0 28 MIN. 28 MIN. Features Marking Compact size, light weight High reliability Cathode mark Abridged type name General purpose rectifier applications N1 N1

skiip 613 gb

Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Contextual Info: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

FE16B

Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —

skiip 613 gb

Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Contextual Info: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2

Contextual Info: DIODE MODULE DDH0F/KD110F Power Diode Module D D 1 1 OF series are designed for various rectifier circuits. DD 1 1 OF has two diode chips connected in series in 25 mm linch width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

1KAB80E

Abstract: 1KAB100E 1KAB10E 1KAB20E 1KAB40E 1KAB60E B125C1000 B250C1000 B40C1000 B80C1000
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

B500C1000

Abstract: 1KAB20 B80C1000 1kab60e 1KAB60 1kab40
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

1KAB60E

Abstract: 1KAB80E B125C1000 B250C1000 B40C1000 B80C1000 1KAB100E 1KAB10E 1KAB20E 1KAB40E
Contextual Info: 1KAB-E Series Vishay High Power Products Single Phase Rectifier Bridge, 1.2 A FEATURES • Ease of assembly, installation, inventory RoHS • High surge rating COMPLIANT • Compact • RoHS compliant DESCRIPTION D-38 A 1.2 A diode bridge rectifier assembly designed for new

Contextual Info: DIODE MODULE D D 160F UL;E76102 M Power Diode Module D D 16 0 F series are designed for various rectifier circuits. DD 1 6 0 F has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: DIO DE MODULE DD130F Power Diode Module DD13 0 F series are designed for various rectifier circuits. DD 1 3 0 F has two diode chips connected in series in a package and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up

Contextual Info: Features • ■ ■ Applications Low profile package Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD1607-B120 ~ B140L Schottky Barrier Rectifier Chip Diode General Information

Contextual Info: Features • ■ ■ Applications Low profile package Surface mount Very low forward voltage drop ■ ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD1607-B120 ~ B140L Schottky Barrier Rectifier Chip Diode General Information

B120

Abstract: B140L CD1607-B120 CD1607-B120L CD1607-B140 CD1607-B140L
Contextual Info: Features Applications • ■ ■ ■ Low profile package Surface mount Very low forward voltage drop ■ ■ ■ ■ Cellular phones PDAs Desktop PCs and notebooks Digital cameras MP3 players CD1607-B120 ~ B140L Schottky Barrier Rectifier Chip Diode General Information

B1100

Abstract: B120 B130L B140 B160 B170 B180 CD214A-B120 JEDEC DO-214AC DC COMPONENTS
Contextual Info: Features • ■ ■ SMA package Surface mount Very low forward voltage drop CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly

b20c1500

Abstract: E2733 2KBB20R B250C1500 1000 b380c1500 B250C1500 2kbb10r B80C1500 2KBB20 2KBB100R
Contextual Info: Bulletin E2733 rev. D 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 A2s 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four

E2733

Abstract: B80C1500 b250c1500 B250C1500 1000 b380c1500 B40C1500 1000 B80C1500/1000 bridge B250c1500 2KBB40 2KBB100
Contextual Info: Bulletin E2733 rev.C 2KBB SERIES 1.9A single phase rectifier bridge Maximum Ratings and Characteristics 2KBB. Units 1.9 A 50Hz 50 A 60Hz 52 A 50Hz 17.7 A2s 60Hz 16.1 As 100 to 1000 V - 40 to 150 °C IO IFSM I2t VRRM TJ 2 Description/Features A 1.9A single phase diode brodge rectifier assembly consisting of four

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

marking B12 diode SCHOTTKY

Abstract: b12 marking MBRS120T3 B12 DIODE marking B12
Contextual Info: MBRS120T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay