RECTIFIER, 70A, 1000V Search Results

70EPF10

Abstract: 70EPF12 I2155
Contextual Info: Bulletin I2155 rev. C 12/02 QUIETIR Series 70EPF. FAST SOFT RECOVERY RECTIFIER DIODE VF< 1.45V @ 70A t rr = 100ns VRRM1000/1200V Description/Features Major Ratings and Characteristics Characteristics 70EPF. Units The 70EPF. fast soft recovery QUIETIR rectifier series

BT08

Abstract: 70HFI 40HFL 40HFL10S02 70HF 70HFL 85HFL IR 70hfl80s05 0Q0500 diode S02
Contextual Info: I N T E R NA TI ONAL RECTIFIER 4855452 SS î F | 4flSSM5 a □ □ 0 4 c],i 7 55C INTERNATIONAL RECTIFIER 04997 Data Sheet No. PD-2.093 INTERNATIONAL REC TIFIER IO R 40HFL, 70HFL, 85HFL SERIES 4 0 A, 70A, 8 5 A Fast: Recovery Rectifiers Major Ratings and Characteristics

S70B(R)

Contextual Info: S 70B R T H RU S 70Y ( R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODE STUD TYPES Features 70A 70 Amp Rectifier 100-1600 Volts High Surge Capability Types Up to 1600V V RRM Maximum Ratings Operating Temperature: Storage Temperature: Part Number

Contextual Info: S70B R THRU S70Y(R) DACO SEMICONDUCTOR CO., LTD. STANDARD RECOVERY DIODES STUD TYPE 70A Features High Surge Capability 70Amp Rectifier 100-1600 Volts Types up to 1600V V RRM DO-5 Maximum Ratings Operating Temperature: -65 C to +180 (S70B TO S70Q) -65 C to +150

NTE607

Abstract: diode 1200A 1000V rectifier NTE6048 NTE6049 NTE6054 NTE6060 NTE6055 NTE6064 current NTE6050 NTE6051
Contextual Info: NTE6048 thru NTE6073 Industrial Silicon Rectifier, 70A Description: The NTE6048 thru NTE6073 power rectifiers are stud mounted DO5 packages. Because the silicon junction is carefully fitted within a glass–to–metal hermetically sealed case, reliable operation is assured, even with extreme humidity and under other severe environmental conditions. These power

Contextual Info: FR70B R 05 THRU FR70Q(R)05 DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 70A High Surge Capability 70Amp Rectifier 100-1200 Volts Types Up to 1200V VRRM DO-5 B N M C Maximum Ratings J Operating Temperature: -40 C to +125 Storage Temperature: -40 C to +150

TRANSISTOR J 5804 NPN

Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Contextual Info: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

Contextual Info: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

transistor* igbt 70A 300 V

Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

IRG4PSH71UD

Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Rectifier, 70A, 1000V

Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
Contextual Info: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

DO-15

Contextual Info: 1N5391 THRU 1N5399 GENERAL PURPOSE PLASTIC RECTIFIER VOLTAGE: 50 to 1000V CURRENT: 1.5A FEATURE DO-15\DO-204AC Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C/10sec/0.375”lead length at 5 lbs tension

triac mw 131 600d

Abstract: 65n06
Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

Contextual Info: SS INTERNATIONAL RECTIFIER V ö 55^5T INTERNAT[ONAL D E I 4 flS S 4 5 2 0 D G 4 Ö 2 3 55C R E C T I F 1ER 04823 Ü Data Sheet No. PD-3.082 I« R IN T E R N A T IO N A L . R E C T I F I E R T = - 3 .^ - n 2N1792, SN1805, 2N1909, 2N2Q23 SERIES 11 O A m p R M S

2N2023-30

Abstract: 2N1800 JAN TRANSISTOR D1651 2N1792 2N1804 2N1805 2N1807 2N1909 2N1792 Series 2N2023
Contextual Info: S S INTERNATIONAL RECTIFIER 4855^5^"INTERNATIONAL DE | 4 A S S 4 5 5 RECTIFIER 55C 0 D G 4 ñ 2 3 CH823 Ü Data Sheet No. PD-3.082 in t e r n a t io n a l r e c t if ie r 2 N 1 7 9 2 , S N S 1 N 8 Q 5 , S S O S 3 H O A m p Major Raxings and Characteristics

10 AMP 1200V RECTIFIER DIODE

Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Contextual Info: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with

GSG fuse

Abstract: GSG1000 SFE9000004 GSG 1000 GSMJ1000 GS1000 gsmk1200 ge power controls GSMJ680 IEC269
Contextual Info: GS Semiconductor Fuselinks GE Power Controls GS Semiconductor fuselinks GS Semiconductor Fuselinks TYPE ‘GS’ Semiconductor Fuselinks Technical information 3 Full GS range of fuselinks are designed to the requirements of IEC269 -IV 1986 Precise Pre-determined performance

ABB inverter motor fault code

Abstract: Bus Bar torque value table for metric bolts wg9017d2g CSG2001-14A04 2.5 kva inverter diagrams thyristor CSG2001-14A04 TOSHIBA S6475R WG9013A3A Bus Bar torque for metric bolts 3.5 kva inverter circuits
Contextual Info: f l à ALLEN-BRADLEY ^ 5 5 ^ A R O C K W E L L IN T E R N A T IO N A L C O M P A N Y Allen-Bradley 1352C-PIUS GTO Replacement and Installation Guide Kit Instructions GTO Replacement GTO Replacement Kits are available to provide an easy method of changing a

NTE156

Contextual Info: NTE156 General Purpose Silicon Rectifier Features: D Low Leakage D Low Forward Voltage Drop D High Current Capability Maximum Ratings: TA = +25°C unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%

RL252GP

Abstract: RL253GP RL254GP RL255GP RL256GP RL257GP RL251GP
Contextual Info: RL251GP THRU RL257GP Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features l 2.5 Amp Glass Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding Passivated Rectifier