RDS 1OHM Search Results

Contextual Info: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp

Contextual Info: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp

VNH3ASP30-E

Abstract: pwm 555 driver application multipower JESD97 VNH3ASP30TR-E 555 pwm motor DC
Contextual Info: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp

multipower

Abstract: JESD97 VNH3ASP30-E VNH3ASP30TR-E
Contextual Info: VNH3ASP30-E Automotive fully integrated H-bridge motor driver Features Type RDS on Iout Vccmax VNH3ASP30-E 42mΩ max (per leg) 30A 41V MultiPowerSO-30 • 5V logic level compatible inputs ■ Undervoltage and overvoltage shutdown ■ Overvoltage clamp

ASJD1200R045

Abstract: SiC JFET JFET semisouth silicon carbide JFET SJDP120R045 silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SiC JFET

Abstract: JFET semisouth SJDP120R045 5A JFET ASJD1200R045 SEMISOUTH SJDP
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.045 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

SEMISOUTH

Abstract: JFET semisouth SiC JFET semisouth JFET SJDP120R085
Contextual Info: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

ASJD1200R085

Abstract: SiC JFET SJDP120R085 JFET semisouth SEMISOUTH silicon carbide j-fet SJDP silicon carbide JFET JFET semisouth Semisouth, SJDP120R085
Contextual Info: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET BVDS FEATURES: ProductSummary 1200 RDS ON max 0.085 V : ETS,typ TBD J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (260oC Contact Factory)

ASJE1200R100

Abstract: SiC JFET JFET semisouth semisouth sjEp120R100 SEMISOUTH SJEP120R100 SJEP120 silicon carbide JFET
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

ASJE1700R550

Abstract: SiC JFET JFET semisouth 3E05 SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP170R550 SJEP
Contextual Info: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-258 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

SJEP170R550

Abstract: semisouth JFET 3E05 SEMISOUTH JFET semisouth ASJE1700R550
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.550 V : ETS,typ 74 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

JFET semisouth

Abstract: SEMISOUTH SiC JFET
Contextual Info: ADVANCED INFORMATION SiC JFET ASJE1200R100 Normally-OFF Trench Silicon Carbide Power JFET BVDS FEATURES: RDS ON max 0.100 V : ETS,typ 170 J Die Inside • Hermetic TO-257 Packaging • 200°C Maximum Operating Temperature (for 260oC Contact Factory) • Available Screening:

Ultra-fast Recovery Diodes Meet Today Requirements for High Frequency Operations and Power Ratings

Abstract: all mosfet power amplifier AUDIO MOSFET POWER AMPLIFIER CIRCUIT MOSFET IGBT THEORY AND APPLICATIONS Complementary Audio mosfets Power Amplifier MOSFET QG international rectifier application note 100w mosfet audio power amplifier mosfet power amplifier class D class a mosfet power amplifier
Contextual Info: Application Note AN-1070 Class D Audio Amplifier Performance Relationship to MOSFET Parameters By Jorge Cerezo, International Rectifier Table of Contents Page Abstract .…………2

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast

op amp cookbook

Abstract: N-Channel JFET Vgsoff N-Channel jfet 100V depletion analog optocoupler hcnr201 Texas Instruments LED Cookbook n-Channel Depletion Mosfets IRFU9120 equivalent dual P-Channel JFET IRFU9120 OPA364
Contextual Info: Op Amp Stone Soup A “Cookbook” Collection of Single Supply Op Amp Circuits Tim Green Linear Applications Manager Tucson Division green_tim@ti.com The Story of Stone Soup Some travelers come to a village, carrying nothing more than an empty pot. Upon their arrival, the villagers are unwilling to share any of their

TLV2426

Abstract: op amp cookbook MMBT2222 OPA364 "Texas instruments" transistor 2N3329 2N3955 2N6804 Stone Soup IRFU9120
Contextual Info: Op Amp Stone Soup A “Cookbook” Collection of Single Supply Op Amp Circuits Tim Green Linear Applications Manager Tucson Division green_tim@ti.com Op Amp Stone Soup: This presentation will offer a "Stone Soup" collection of useful op amp circuits to solve linear application problems on a daily basis. Each op amp circuit pre-built in

IT8500E-L

Abstract: it8500e UP7711U8 JRST2001 EMB20N03V UP7714BMA5-00 IT8500 JMC251 parade ps8101 PCH Ibex Peak-M
Contextual Info: 5 4 3 2 1 K42F SCHEMATIC For BOM Rev1.0 Power VCORE Page 80 System D Page 81 BLOCK DIAGRAM D 1.5VS & 1.05VS Page 82 DDR & VTT Page 83 HDMI HDMI AMD PARK-XT-S3 DDR3 800/1066MHz CPU PCIE x16 ARRANDALE +2.5VS DDR3 SO-DIMM Page 84 Page 16~18 CRT CRT LVDS Page 70

IT8500E-L

Abstract: it8500e L7206 1.2 it8500 k52jr UP7711U8 ICS9LPR427 ALC269 PT8528 UP7714BMA5-00
Contextual Info: 5 4 SYSTEM PAGE REF. Content PAGE D C B A 1 2 3 4 5 6 7 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 36 37 38 40 41 42 43 44 45 46 47 48 50 51 52 53 56 57 60 61 Block Diagram System Setting CPU 1 _DMI,PEG,FDI,CLK,MISC CPU(2)_DDR3 CPU(3)_CFG,RSVD,GND

TRansistor L 701

Abstract: vmk 5 pin BUK995-60A
Contextual Info: Philips Components Data sheet Preliminary specif ication status date of issue March 1991 9 0 BUK995-60A PowerMOS transistor Logic Level SensorFET 5bE D PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode logic level field-effect power transistor in a 5 pin plastic

SC3102HULTRT

Abstract: SC3102
Contextual Info: SC3102 2A Synchronous Step-Down Regulator POWER MANAGEMENT Features „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ Description VIN Range: 2.9 – 5.5V Preset VOUT Range: 1.0V to 3.3V Up to 2A Output Current Ultra-Small Footprint, <1mm Height 1.5MHz Switching Frequency

UP7711U8

Abstract: RTM880T-792-LF max17480G rtl8112 UP7711 UP7714BMA5-00 RS780MN rtm880t G780P11U IT8752E
Contextual Info: 5 4 3 2 1 K40AA SCHEMATIC R1.2 D D Content PAGE PAGE Content SYSTEM PAGE REF. C B A 3 4 5 6 7 8 9 10 11 12 13 14 15 20 21 22 23 24 25 29 30 31 32 33 34 35 36 37 38 40 41 42 43 44 45 46 48 50 51 52 53 56 57 58 60 61 62 63 65 66 69 70 71 72 73 74 75 76 77 SCHEMATIC INFORMATION

max8770

Abstract: bpm t105 ICS9LPRS355AGLFT G545B1 ac41 cn19 100v 1p0 quanta h48 diode zener Zener diode H48 quanta computer MMBS3904
Contextual Info: 1 2 3 4 5 7 8 LE5 BLOCK DIAGRAM module PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 A 6 CPU THERMAL SENSOR CPU Merom LAYER 3 : IN1 LAYER 4 : SVCC 14.318MHz A PAG 5 478P (uPGA)/35W PAG 3,4 LAYER 5 : IN2 01 CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK#

l6232e

Abstract: l6232 PLCC21 7 PLCC28 hdd spindle motor
Contextual Info: L6232E SPINDLE DRIVER 1.5A MAXIMUM PEAK CURRENT CONTROLLED SLEW RATE CENTRAL CHARGE PUMP PWM AND LINEAR MODES CUTOFF TIME USER CONFIGURABLE FAST, FREE-WHEELING DIODES ON CHIP OVER-TEMPERATURE PROTECTION BRAKE FUNCTION INPUT PLCC21+7 ORDERING NUMBER: L6232E

L6232A

Abstract: l6232 PLCC44 Hdd spindle motor hdd spindle motor driver
Contextual Info: L6232A SPINDLE DRIVER ADVANCE DATA 2.5A MAXIMUM PEAK CURRENT CONTROLLED SLEW RATE CENTRAL CHARGE PUMP PWM AND LINEAR MODES CUTOFF TIME USER CONFIGURABLE FAST, FREE-WHEELING DIODES ON CHIP OVER-TEMPERATURE PROTECTION BRAKE FUNCTION INPUT PLCC44 ORDERING NUMBER: L6232A