HP 54720D
Contextual Info: R How to Measure RDRAM* System Clock Jitter Application Note AP- 667 June 1999 Order Number: 292225-002 R How to Measure RDRAM* System Clock Jitter Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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HP 54720D
Abstract: LC584 HP54720 HP54720D RIMM-Module Intel AP-667 29222* intel
Contextual Info: R How to Measure RDRAM System Clock Jitter Application Note AP- 667 March 1999 Order Number: 292225-001 R How to Measure RDRAM System Clock Jitter Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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ap-667hp 54720dlc584hp54720+4hp54720drimm-moduleintel ap-66729222* intel
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RDRAM SOP
Abstract: concurrent rdram 50mhz crystal oscillator FS6115-01 CRYSTAL oscillator 14.318MHZ ami computer motherboard circuit diagram ICS rambus clock generator rdram clock generator concurrent RDRAM 72 rambus clock generator soic
Contextual Info: 6 X T %DVH&RQFXUUHQW 5'5$0 &ORFN *HQHUDWRU ,&V $GYDQFH ,QIRUPDWLRQ August 1998 1.0 Features 2.0 • Single phase-locked loop PLL) device with two clock outputs for Rambus Base/Concurrent RDRAM applications supporting an expansion RModule
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318mhzfs6115-01250mhzfs6115-02+13267mhzfs6115-03300mhzfs6115rdram sopconcurrent rdram50mhz crystal oscillatorcrystal oscillator 14.318mhzami computer motherboard circuit diagramics rambus clock generatorrdram clock generatorconcurrent rdram 72rambus clock generator soic
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TC59R1809
Abstract: toshiba rdram TC59R1809VK RDRAM toshiba rdram clock generator
Contextual Info: TOSHIBA TC59R1809VK/HK PRELIMINARY 2,097,152 WORD X 9-BIT RAMBUS DRAM Description The TC59R1809VK/HK Rambus DRAM RDRAM is next-generation high-speed CMOS DRAM with a 2,097,152-word x 9-bit organization and built-in slave logic. The 36,864 sense amps of the DRAM core are used as cache to achieve data transfer rates of up to
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tc59r1809vk/hk152-word500mb/s32-pin+5tc59r1809toshiba rdramtc59r1809vkrdram toshibardram clock generator
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SPDW
Abstract: 3TTR 29802* intel y2w12 82840 mch 82803aa
Contextual Info: R Intel 82803AA Memory Repeater Hub for RDRAM MRH-R Datasheet February 2000 Order Number: 298022 - 001 82803AA MRH-R R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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82803aaspdw3ttr29802* intel+2y2w1282840 mch
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b72 voltage regulator
Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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mn18r1624mp18r1624288mbit144mb+716mx18288mb16k/32msb72 voltage regulatormarking a93a75 marking codemarking a86
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marking code b84
Contextual Info: MN18R1624 8 EF0 MP18R1624(8)EF0 Preliminary Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Page 0 Version 0.1 Feb. 2004 MN18R1624(8)EF0 MP18R1624(8)EF0 Preliminary
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mn18r1624mp18r1624288mbitmarking code b84 |
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a80 marking code
Abstract: MN18R3268AF0-CM8 marking A97 b72 voltage regulator marking A99 marking b88 marking code B38 MARKING CODE B82 B100 MN18R3268AF0
Contextual Info: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2002) 288Mbit D-die NexMod Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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mn18r3268af0288mbit32mx18576mb+1032k/32msa80 marking codemn18r3268af0-cm8marking a97b72 voltage regulatormarking a99marking b88marking code b38marking code b82b100
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concurrent RDRAM 72
Abstract: Direct RDRAM clock generator RDRAM Reference Manual pin diagram ic 7424 concurrent rdram
Contextual Info: 4-Megabit RDRAM 512K x 9 Description System Benefits The 4-M egabit Rambus DRAM (RDRAM™) is an extremely-high-speed CM OS DRAM organized as 512K words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes this
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ed-7424concurrent rdram 72direct rdram clock generatorrdram reference manual+2pin diagram ic 7424concurrent rdram
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GMII layout
Abstract: TNETX4090 schematic diagram clock schematic SPWA025 TNETX4090 macronix rambus Concurrent RDRAM
Contextual Info: Design and Layout Guidelines for the TNETX4090 Device APPLICATION REPORT: SPWA025A Worldwide Broadband Access Group, Enterprise Products May 1998 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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tnetx4090spwa025agmii layouttnetx4090 schematic diagram+4clock schematicspwa025macronix rambusconcurrent rdram
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200-ball
Abstract: A79 marking code MN18R1628EF0 samsung resitor
Contextual Info: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004
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mn18r1624mp18r1624288mbit16mx18+6288mb16k/32ms200-balla79 marking codemn18r1628ef0samsung resitor
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B83 004
Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.
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mn18r162mp18r162288mbit144mb+616mx18288mb16k/32msb83 004marking a86b72 voltage regulator
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EBL 5101
Abstract: 82803AA RDRAM SOP intel 945 maa 29 5L175 82804AA 29802* intel
Contextual Info: intei Intel 82804AA Memory Repeater Hub for SDRAM MRH-S Datasheet November 1999 Order Number: 298024-001 Datasheet 4 ö 2 b l 7 5 GB1DQ4Ö 774 82804AA MRH-S intel. Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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82804aa4fl2bl75ebl 510182803aa+5rdram sopintel 945maa 295l17529802* intel
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RDRAM SOP
Abstract: 82804AA baa0 29802* intel 82803aa
Contextual Info: R Intel 82804AA Memory Repeater Hub for SDRAM MRH-S Datasheet November 1999 Order Number: 298024-001 Datasheet 82804AA MRH-S R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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82804aardram sopbaa029802* intel+182803aa
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RSL clock generator
Abstract: DL-0035-00 direct rdram
Contextual Info: ADVANCE INFORMATION Direct Rambus RIMM™ Module 128 MBytes 64M x 16/18 RAMBUS Overview System Applications The Direct Rambus™ RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory,
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Regulator marking code A30
Contextual Info: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2003) 288Mbit D-die NexMod TM Module Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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mn18r3268af0288mbit32mx18576mb+232k/32msregulator marking code a30
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marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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mn18r1624mp18r1624288mbit144mb+416mx18288mb16k/32msmarking a86
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2N3904 A30
Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
Contextual Info: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
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2n3904 a302n3904 a522n3904 a272n3904 b28+6mec r682n3904 a41intel c206 mch2n3904 a26intel c202 mch2n3904 b21
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SHP32-P-1125-0
Abstract: MSM5718B70 MSM5718B70-50GS-K MSM5718B70-53GS-K MSM5718B70-60GS-K sin ttl RDRAM CONCURRENT MSM5718B7
Contextual Info: ¡ Semiconductor MSM5718B70 ¡ Semiconductor MSM5718B70 E2G1033-17-54 18-Megabit RDRAM 2M ¥ 9 DESCRIPTION The 18-Megabit Rambus DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per
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msm5718b70e2g1033-17-5418-megabitshp-32+7shp32-p-1125-0msm5718b70-50gs-kmsm5718b70-53gs-kmsm5718b70-60gs-ksin ttlrdram concurrentmsm5718b7
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OKI part numbering guide
Abstract: MSM5718B70 MSM5718B70-50GS-K MSM5718B70-53GS-K MSM5718B70-60GS-K SHP32-P-1125-0 OKI RDRAM
Contextual Info: O K I Semiconductor MSM5718B70 E 2 G 1 0 3 3 - 1 7 -5 4 18-Megabit RDRAM 2M x 9 DESCRIPTION The 18-Megabit Rambus DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M w ords by 9 bits. It is capable of bursting u p to 256 bytes of data at less than 2 nanoseconds per
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e2g1033-17-54msm5718b7018-megabitshp-32+6oki part numbering guidemsm5718b70-50gs-kmsm5718b70-53gs-kmsm5718b70-60gs-kshp32-p-1125-0oki rdram
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concurrent RDRAM 72
Abstract: NEC RDRAM NEC Rambus Direct RDRAM clock generator rdram clock generator HPD488170 UPD488170
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |x P D 4 8 8 1 7 0 18M bit Rambus DRAM IMword X 9bit x 2bank D e s c rip tio n The 18-Megabit Rambus DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized a s j j y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling Lci(
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18-megabitpd488170hpd488170ed-7424+6concurrent rdram 72nec rdramnec rambusdirect rdram clock generatorrdram clock generatorupd488170
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mkph
Abstract: LG concurrent RDRAM Concurrent RDRAM IIPD488170 IPD488170LVN-A40-9 IPD488170LVN-A50-9 905 nec IC-3384 concurrent rdram NEC NEC RDRAM concurrent
Contextual Info: Rambus DRAM PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |liP D 4 8 8 1 7 0 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description H The 18-Megabit Rambus DRAM (RDRAM™) is an extremely-high-speed CMOS DRAM organized asy|M w o r th y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus Signaling
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18-megabitpd488170iipd488170ed-7424+9mkphlg concurrent rdramconcurrent rdramipd488170lvn-a40-9ipd488170lvn-a50-9905 necic-3384concurrent rdram necnec rdram concurrent
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GM73V1892
Abstract: concurrent RDRAM 72 concurrent rdram LG LG concurrent RDRAM 1I159 gm73v189 gm73v
Contextual Info: GM73V1892 GM73V1682 LG Semicon Co.,Ltd. 2,097,152 WORDS x 8/9 BIT Rambus DRAM Description The GM73V1682 / GM73V1892 Rambus Dynamic Random Access Memory RDRAM is a next generation high-speed CMOS DRAM organized as 2,097,152 x8/9 bits and capable o f bursting up to 256
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gm73v1892gm73v168232-pinsvp-32+6concurrent rdram 72concurrent rdram lglg concurrent rdram1i159gm73v189gm73v
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Nec concurrent rdram
Abstract: concurrent rdram NEC concurrent rdram CI 7424
Contextual Info: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT |xPD488170 18M bit Rambus DRAM 1 Mword x 9bit x 2bank Description |J The 18-Megabit Rambus DRAM (RDRAM™) Is an extremely-high-speed CMOS DRAM organized a sJM w o r llb y 9 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Rambus S igrgling L o 1 |l% |S L )
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xpd48817018-megabitbm275ed-7424+5lm27sesnec concurrent rdramconcurrent rdram necconcurrent rdramci 7424
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