RD 16V Search Results

WV100V

Contextual Info: 2009.10.21 14:19 페이지80 001 refine-4도 2540DPI 175LPI T MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RD MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RD series Wide Temperature Range Series Solvent Proof WV≦100V ・Standard series for general purpose ・High CV value

FRM9230D

Abstract: FRM9230H 1E14 2E12 FRM9230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM9230D, FRM9230R, FRM9230H 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RM9 0D, M9 0R, M9 0H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 4A, -200V, RDS on) = 1.30Ω TO-204AA

JY MCU

Abstract: Omnivision ov7740 OV77 2X10PTS
Contextual Info: Atmel SAM4S-WPIR-RD . User Guide 42060A–ATARM–12/2012 Section 1 1.1 Scope . 1-1

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
Contextual Info: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF

S92-H

Abstract: 1E14 2E12 FRS9230D FRS9230H FRS9230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RS9 0D, S92 R, S92 H bt A, 0V, 2 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 2 m, d rd, Package • 4A, -200V, RDS on) = 1.32Ω TO-257AA

FRM9240D

Abstract: 1E14 2E12 FRM9240H FRM9240R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM9240D, FRM9240R, FRM9240H 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RM9 0D, M9 0R, M9 0H bt A, 0V, 20 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 20 m, d rd, Package • 7A, -200V, RDS on) = 0.720Ω TO-204AA

1E14

Abstract: 2E12 FRM244D FRM244H FRM244R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM244D, FRM244R, FRM244H 12A, 250V, 0.400 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 00 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 00 m, d rd, Package • 12A, 250V, RDS on) = 0.400Ω TO-204AA

1E14

Abstract: 2E12 FRM240D FRM240H FRM240R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM240D, FRM240R, FRM240H 16A, 200V, 0.24 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, 4 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, A, 0V, 4 m, d rd, Package • 16A, 200V, RDS on) = 0.24Ω TO-204AA

Contextual Info: 0402 Size Ceramic Chip Capacitor C apacitance NPO/COG 25V m iniReel O rd er /1 Wr N um ber V 500 pcs. ^ .- 4" / VI |'1 JJ miniBag O rd er N um bei 100 Pcs l.OpF 1.5pF 1.8pF 2.2pF 2.7pF 3.3pF 3.9pF 4.7pF 5.6pF 6.8pF 8.2pF lOpF 12pF 15pF I8pF 22pF 27pF 33pF

2E12

Abstract: 3E12 FRM430D FRM430H FRM430R Rad Hard in Fairchild for MOSFET
Contextual Info: FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM4 D, M4 R, M4 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 3A, 500V, RDS on) = 2.50Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRM234D FRM234H FRM234R equivalent components of transistor 772
Contextual Info: FRM234D, FRM234R, FRM234H 7A, 250V, 0.70 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Title RM2 D, M2 R, M2 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, , 0V, m, d rd, Package • 7A, 250V, RDS on) = 0.70Ω TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: Aluminum Electrolytic Capacitor m in iB a g m in iR eel C ap. V o lta g e O rd er l, N um ber 2 0 0 p cs . X' O rd e r N um ber 5 0 p cs. - Specifications Anti Solvent mI jj^I Seal JH i] 4m m Diameter l.OflF 2.2pF 3.3|iF 4.7|lF 4.7flF lOpF 22fiF 50V 50V

Contextual Info: SP503 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 73 VCC 74 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • Single Chip Programmable Serial Transceiver ■ Seven (7) Drivers and Seven (7) Receivers

A15F

Abstract: a18f P6101 a19f A17f A6 P113 P113 P310 SN400 6322P
Contextual Info: A[0.21] X3D CPU CPU.sch D[0.15] MEMORY MEMORY.sch X3P J5 A[0.21] A[0.21] D[0.15] D[0.15] D0 GND /RD-U /RD-U /WRL /WRL /WRH /WRH /RES-U J6 D1 Adaptmode opt. J12 D8 GND WRL/WRH 4k7 /RES-U 2 1 D9 GND P2 JP7 Chip Sel. J8 D11 GND P6 Segment Adr. 4K7 P6 J10

Contextual Info: 2009.10.21 14:19 페이지82 001 refine-4도 2540DPI 175LPI T MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS RD series RM TYPICAL PERFORMANCE ● TEMPERATURE CHARACTERISTICS Capacitance change vs. temperature 16V 1000 F

ETH1-230L

Abstract: PA2467NL ETH1-230LD PS2801-1-L Switching Regulator 3528 43E-14 PA2369NL SS-6488-NF-K1 PA2466 6202k
Contextual Info: 5 4 3 J1 SS-6488-NF-K1 IN FROM HIGH POWER PSE 1 TX+ 2 TX- 3 RX+ 6 4 SPARE1 7 6 TD+ 1 10 5 TCT 2 TD- TXCT 11 3 OUT 4 RD+ 4 RXCT TO 12 3 RCT 5 PHY 13 2 RD- 6 SPARE2 8 R5 75 R4 75 R1 51K 1% VPORTP C15 0.01uF 100V C14 0.01uF 100V C16 0.01uF 100V C13 0.01uF 100V

EIA-530A

Abstract: RS-449 SP505 SP505A SP505B sp5051
Contextual Info: SP505 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 73 VCC 74 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • +5V Only Operation • Seven (7) Drivers and Seven (7) Receivers • Driver and Receiver Tri-state Control

63D14

Abstract: PA2467NL ETH1-230LD SS-6488-NF-K1 2.2NF Switching Regulator 3528 PS2801-1-L DC-133 ETH1-230L PA2466
Contextual Info: 5 4 3 J1 SS-6488-NF-K1 1 TX+ 9 6 SPARE1 4 2 10 5 TD- 3 OUT TXCT 11 4 RD+ 4 TO RXCT 12 3 RCT 5 PHY 13 2 RD- 6 14 1 5 C14 0.01uF 100V R4 75 C13 0.01uF 100V C15 0.01uF 100V C16 0.01uF 100V R6 75 1 C17 1000pF 2KV 1 +C5 1 C6 2.2uF 100V 1210 10uF 100V D1 SMAJ58A

Contextual Info: SP505 62 VCC 61 SD a 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 74 VCC 73 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 80 CTS • +5V Only Operation ■ Seven (7) Drivers and Seven (7) Receivers ■ Driver and Receiver Tri-state Control

bl12864j

Abstract: 12864-J BL12864JERNH BL12864 SSD1325 P 12864 12232 572D lcd 12864 12864 graphic display
Contextual Info: SPECIFICATIONS FOR OLED MODULE MODEL NO. BL12864JERNH$ FOR MESSRS: _ ON DATE OF: _ APPROVED BY: _ BOLYMIN, INC. 13F-1, 20, TA-LONG RD., TAICHUNG CITY 403, TAIWAN, R.O.C.

BAT54 COL

Abstract: ccfl driver schematic lg Royer oscillator ccfl backlight controller schematic Led driver schematic C2012C0G1E103J ccfl driver schematic LM3431 BZX84C5V1-7-F ZENER CRCW08057R50F
Contextual Info: National Semiconductor RD-169 Product Applications Design Center November 2008 1.0 Design Specifications Inputs Output #1 VinMin=8V Vout1=20V VinMax=16V Iout1=0.06A 2.0 Design Description Better backlight displays for portable devices - Two-Channel 60 mA Backlight LED Driver Design

tri state

Abstract: EIA-530A RS-449 SP505 SP506
Contextual Info: SP506 61 SD a 62 VCC 63 TT(a) 64 GND 65 TT(b) 66 CS(a) 67 CS(b) 68 DM(a) 69 DM(b) 70 RD(a) 71 RD(b) 72 GND 73 VCC 74 VCC 75 GND 76 SCT(a) 77 SCT(b) 78 DSR 79 SCT RxD 1 60 GND SDEN 2 59 SD(b) TREN 3 58 TR(a) RSEN 4 57 GND LLEN 5 56 TR(b) TTEN 6 55 VCC SCTEN 7

bd-9b

Abstract: PJ-002AH pA1558 SI4470DY ETH1-230LD 2200pf substitution PA1558NL HD2X3-079 ETH1-230L GA343D
Contextual Info: 5 4 J1 PD IN 36V-57V IN FROM HIGH POWER PSE D 3 2 T3 ETH1-230LD 1 TX+ 2 TX- 3 RX+ TXCT 6 SPARE1 4 RXCT 5 J2 9 6 TD+ 1 TCT 2 10 5 TD- 3 OUT 11 4 RD+ 4 TO 12 3 RCT 5 13 2 RD- 6 14 1 SPARE2 7 8 SS-6488-NF-K1 RJ45 R5 75 C14 0.01uF 200V R4 75 C13 0.01uF 200V VPORTP

SN7002

Abstract: 29f010 PLCC 29F010-PLCC SN4001 psen rs 2 EPM7032QFP 82c250 SN400 43256 DS2401
Contextual Info: 3 2 1 29 /EA 3 1 15 4 2 GND JP10 R3 C1 22pF 1 2 14 100R PSEN-P# PSEN-U# RD-P# VCC RD-U# WR-P# GND WR-U# GND RES-P# GND RES-U# GND ALE KX2X15 P0.0 P0.1 P0.2 P0.3 P0.4 P0.5 P0.6 P0.7 X1 X2 2 3 4 5 6 7 8 9 D0 D1 D2 D3 D4 D5 D6 D7 VCC 16 1 10 20 29 P3.2 P3.3 P3.4