RATINGS01 Search Results

Contextual Info: IDT54/74FCT240T/AT/CT/DT - 2240T/AT/CT IDT54/74FCT241T/AT/CT/DT - 2241T/AT/CT IDT54/74FCT244T/AT/CT/DT - 2244T/AT/CT IDT54/74FCT540T/AT/CT IDT54A74FCT541/2541T/AT/CT FAST CMOS OCTAL BUFFER/LINE DRIVERS FEATURES: DESCRIPTION: • Common features: - Low input and output leakage <1 pA max.

Contextual Info: B U R R -B R O W N « [ OPA2337 1 MicroSlZE, Single-Supply CMOS OPERATIONAL AMPLIFIER M icroAm plifier Series FEATURES • • • • • • • • DESCRIPTION MicroSlZE PACKAGE: SOT-23-8 SINGLE SUPPLY OPERATION RAIL-TO-RAIL OUTPUT SWING FET-INPUT: lB = 10pA max

Contextual Info: PRELIMINARY 128K x 36, 3.3V SYNCHRONOUS SRAM IDT71V547 WITH ZBT FEATURE, BURST COUNTER AND FLOW-THROUGH OUTPUTS D ev ice T ech n ology , l i e . FEATURES: • 128K x 36 memory configuration, flow-through outputs. • Supports high performance system speed -1 0 0 MHz

Contextual Info: 4 K x 16 FourPort STATIC RAM MULTICHIP MODULE PRELIMINARY IDT70M74 Integrated Device Technology, Inc. FEATURES: • High density 64K-bit FourPort™ static RAM multichip module • High-speed access — Commercial: 25, 30, 35, 45ns max. — Military: 30, 35, 45ns (max.)

Contextual Info: GAL20LV8ZD Lattice Low Voltage, Zero Power E2CMOS PLD Generic Array Logic ; Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES l/C L K — [> • 3.3V LOW VOLTAGE, ZERO POWER OPERATION — JEDEC Compatible 3.3V Interface Standard — Interfaces with Standard 5V TTL Devices

Contextual Info: VITESSE VSC8063 Advanced Product Information STM- 16/STS-4816:1 Multiplexer with Integrated Clock Generation Features • 16:1 2.488 Gb/s Multiplexer • Integrated PLL for Clock Generation No External Components • 16-bit Wide, Single-ended, ECL 100K Compatible Parallel Data Interface

IS28F010

Abstract: IS28F010-45PL
Contextual Info: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt

se 140

Contextual Info: MOSEL M S 72105 / 72115 256x16 & 512x16 Parailel-to-Serial FIFOs PRELIMINARY FEATURES DESCRIPTION • 2 5n s para lle l p ort a ccess tim e The M S 7 21 0 5 and M S 7 21 1 5 are hig h -sp ee d , low pow e r 16-bit p a ra lle l-to -se ria l FIFO s. T h e se FIFO s a re w ell su ited fo r any

IDT7M624

Contextual Info: 1 MEGABIT CMOS STATIC RAM MODULE IDT 7M624S FEATURES: DESCRIPTION: • High-density 1024K-bit CMOS static RAM module • Customer-configured to 64K x 16, 128K x 8 or 256K x 4 • Fast access times - Military: 35ns max. - Commercial: 25ns (max.) • Low power consumption

Contextual Info: ISSI IS 6 1 C 5 1 2 64K x 8 HIGH-SPEED CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The I S S I IS61C512 is a very high-speed, low power, 65,536 word by 8-bit C M O S static RAM s. T he y are fabricated using

Contextual Info: FAST CMOS OCTAL D FLIP-FLOP WITH CLOCK ENABLE IDT 54/74FCT377 IDT 54/74FCT377A FEATURES: DESCRIPTION: • IDT54/74FCT377 equivalent to FAST speed; IDT54/74FCT377A 45% faster than FAST ™ • Equivalent to FAST ’ “ output drive over full temperature and voltage supply extremes

Contextual Info: ISSI IS28F020 262,144 CMOS FLASH MEMORY x 8 p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 nA maximum standby current • Compatible with JEDEC-standard byte-wide

Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) ■ Low Power operation (Commercial) - 715 mW Active -10/12 - 550 mW Active - 15/20/25

Contextual Info: P4C150 ULTRA HIGH SPEED 1K X 4 RESETTABLE STATIC CMOS RAM x i- FEATURES • Full CMOS, 6T Cell ■ Single 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

Contextual Info: issr IS42G32256_ 256K x 32 x 2 16-Mbit SYNCHRONOUS GRAPHICS RAM ADVANCE INFORMATION SEPTEMBER 1998 FEATURES GRAPHIC FEATURES • 256,144 words x 32 bits x 2-bank organization • All inputs are sampled at the positive going edge of the system clock

Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion

Contextual Info: P4C163/P4C163L ULTRA HIGH SPEED 8K x 9 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) - 25/35ns (Commercial) - 25/35/45ns (Military) ■ Low Power Operation (Commercial/Military)

Contextual Info: P3C3148 SUPER FAST 1K x 4 STATIC CMOS RAM SCRAM FEATURES Separate Data I/O • Highspeed - 5/6Z7/8 ns (Address Access) - 3/4/S/6 ns (Chip Select Access) Three-State Outputs TTL Logic Level Inputs and Outputs ■ Single 3.3V ± 0.2V Power Supply Produced with PACE III Technology

Contextual Info: MOSEL MS318002 1,048,576 X 8 CMOS Mask Programmable ROM 32 Pin DIP FEATURES DESCRIPTION • Access time: 200ns The MS318002 high performance Read Only Memory is organ­ ized as 1,048,576 bytes by 8 bits. It is designed to be compatible with all microprocessors and similar applications where high

d 1548

Abstract: MPEM P4C1298
Contextual Info: P4C1298/P4C1298L, P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS ' X r- FEATURES High Speed (Equal Access and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military)

IS27HC010-45CW

Contextual Info: IS27HC010 131,072 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 30 ns • Pin compatible with the IS27C010 • High-speed write programming — Typically less than 30 seconds • Industrial and commercial temperature ranges available

Contextual Info: ISSI IS61S6432 64K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JANUARY 1997 FEATURES DESCRIPTION • The IS S IIS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-perfor­ mance, secondary cache for the Pentium , 680X0™, and

idt7134

Abstract: orite IDT71342 IDT71342LA IDT71342SA
Contextual Info: Integrated D evice T ech nology, Inc. CMOS DUAL-PORT RAM 32K 4K x 8-BIT WITH SEMAPHORE PRELIMINARY IDT71342SA IDT71342LA FEATURES: DESCRIPTION: • The IDT71342 is an extremely high-speed 4K x 8 dual-port static FtAM with full on-chip hardware support of semaphore

GAL20ra10

Contextual Info: Lattice' Semiconductor Corporation FEATURES • HIGH PERFORM ANCE E*CMOS* TECHNOLOGY — 20 ns Maximum Propagation Delay — Fmax =41.7 MHz — 20 ns Maximum from Clock Input to Data Output — TTL Compatible 8 mA Outputs — UltraMOS* Advanced CMOS Technology