RAM SEU Search Results

rca thyristor manual

Abstract: HN623258 101490
Contextual Info: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j

Contextual Info: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 item RAM access tim e tRAc -1 2 120ns 100ns 25ns 30ns 180ns 220ns RAM Page mode cycle (tPC)

HM538122

Contextual Info: HM538122 Series — Preliminary 131072-Word x 8-Bit Multiport CMOS Video RAM The HM538122 is a 1-Mbit multiport video RAM equipped with a 128-kword x 8-bit dynamic RAM and a 256-word x 8-bit SAM serial access memory . Its RAM and SAM operate independently and asynchronously. It

Contextual Info: CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed Parameter RAM access tim e îr a c • • • • • • • • • • • • GENERAL DESCRIPTION

Contextual Info: HM538121A Series Preliminary 262,144-W ord x 4-Bit M ultiport C M OS V ideo RAM • DESCR IPTIO N HM 538121AJ Series The HM538121A is a 1-Mbit multiport video RAM equipped with a 128k-word x B-bit dynamic RAM and a 256-word x 8-bit SAM serial access memory . Its RAM and

RAM EDAC SEU

Abstract: SRAM edac AC304 sram 2114 edac 2114 SRAM RAM SEU RAM64k36 7 bit hamming code hamming code
Contextual Info: Application Note AC304 Simulating SEU Events in EDAC RAM Introduction The Actel RTAX-S Field Programmable Gate Array FPGA provides embedded user static RAM in addition to single-event-upset (SEU)-enhanced logic, including embedded triple-module redundancy (TMR)

Contextual Info: HM534251 Series 262,144 x 4-Bit Multiport CMOS Video Random Access Memory • DESCRIPTION HM534251JP Series The HM534251 is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM

Contextual Info: HM538121 S eries- Preliminary 131,072 x 8-B it M ultiport CMOS V ideo Random A ccess M em o ry • DESCR IPTIO N H M 538121JP Series The HM538121 is a 1-Mbit multiport video RAM equipped with a 120k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM

HM658128ALP-10

Abstract: HM658128ALP12 HM658128ALP-12L
Contextual Info: HM658128A Series 131072>w ord x 8 -b it H igh S p eed C M O S P seu do S ta tic RAM The Hitachi HM658128A is a pseudo-static RAM organized as 131,072-word x 8-bit. HM658128A realizes low power consumption and high speed access time by employing 1.3 |im CMOS process

Contextual Info: CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words x 16 bit organization T he LH 5P V 16256 is a 4M bit P seudo-S tatic RAM w ith a 262 ,14 4 w ords x 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)

FM24V10

Abstract: memoire electronique memoire FM24V05 FM25V05 FM25V10 FM28V100 memoire eeprom
Contextual Info: ELECTRONIQUE MAG.COM | NOUVEAUX PRODUITS Ramtron annonce des mémoires F-RAM série famille V 512 Kbits et 1 Mbits Publication: Avril 2009 Deux nouveaux membres dans la famille de F-RAM rapides RAMTRON. Ramtron International Corporation Nasdaq : RMTR ,

HC7464

Abstract: TTL 7464
Contextual Info: Honeywell NON-VOLATILE RAM Advance Information 64K x 1 NON-VOLATILE RAM- MAGNETORESISTIVE HC7464 FEATURES • Non-volatile and NDRO Non-destructive read out 1 jis Read Cycle Time • Unlimited read/write (>1E15 cycles) 250 ns Write Cycle Time Power off data retention

Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

Contextual Info: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is

HX6228

Abstract: honeywell memory sram
Contextual Info: HX6228 128K x 8 STATIC RAM - SOI The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened SOI-CMOS technology, and is

krad

Abstract: 67025E TM1019 RAM SEU
Contextual Info: DPR SCMOS2 Technology Dual Port RAM 8K16 Tolerance to Radiation Abstract This paper proposes a review of the data gathered during radiation testing for the 8Kx16 dual port RAM manufactured using the Radiation Tolerant version of the 0.6µm SCMOS2/2 technology. Both Upset sensitivity

A12L

Contextual Info: 7025E 8K x 16-Bit Dual Port RAM High-Speed CMOS Memory Logic Diagram FEATURES: DESCRIPTION: • 8K x 16-bit dual port RAM - Stand Alone - Master Slave • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission

MA5104

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: NEC . NEC Electronics Inc. Description The /jPD751xx/P1xx is a family of high-performance single-chip CMOS microcomputers containing CPU, ROM, RAM, I/O ports, comparator, interval timer, two timer/counters, vectored interrupts, and a serial inter­ face. The instruction set allows the user to manipulate RAM

24512

Abstract: w24512 W24512S-65LL 24512A
Contextual Info: W24512 finbond M 64K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24512 is a slow speed, low power CMOS Static RAM organized as 65536*a bits that oparatês on a singlo 3 -volt power supply. Tffli device is manufactured using Winbòrtd’s high performance CMOS

XG403

Abstract: max9187 MA9187 DS3480-3 GEC Plessey Semiconductors
Contextual Info: MA9187 APRIL 1995 DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5µm technology. The device has separate input and output terminals controlled

DS3580-3

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5101 MARCH 1995 DS3579-3.2 MA5101 RADIATION HARD 256 x 4 BIT STATIC RAM The MA5101 1k Static RAM is configured as 256 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,

Contextual Info: HLX6256 32K x 8 STATIC RAM—Low Power The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industrystandard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage