450MLL Search Results

Contextual Info: LH5116 FEATURES • 2,048 x 8 bit organization • Access time: 100 ns MAX. • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 nW (MAX.) CMOS 16K (2K x 8) Static RAM DESCRIPTION The LH5116 is a static RAM organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process

10DC IR 3 PINS

Contextual Info: AT27C080 Features • • • • • • • • • Fast Read Access Time -100 ns Low Power CMOS Operation 100 ^A max. Standby 40 mA max. Active at 5 MHz JEDEC Standard Packages 32-Lead 600-mll PDIP and Cerdip 32-Lead 450-mll SOIC SOP 32-Lead TSOP 5V± 10% Supply

24512

Abstract: w24512 W24512S-65LL 24512A
Contextual Info: W24512 finbond M 64K X 8 CMOS STATIC RAM GENERAL DESCRIPTION The W24512 is a slow speed, low power CMOS Static RAM organized as 65536*a bits that oparatês on a singlo 3 -volt power supply. Tffli device is manufactured using Winbòrtd’s high performance CMOS

CXK58257bp

Abstract: cxk58257bym CXK58257b
Contextual Info: SONY CXK58257BTM/BYM/BP/BM - 5 5 L L /7 0 L L /1 0 L L 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A poiysilicon TFT cell technology realized extermely

Contextual Info: MITSUBISHI LSIs M 5 M 5 1 0 0 8 A P ,F P ,V P ,R V -5 5 L ,-5 5 L L 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M5M51008AP,FP.VP.RV are a 1048576- b it CMOS static RAM organized as 131072 word by 8 -b it which are fabricated using high-performance triple polysilicon CMOS

Contextual Info: ADE-203-492 Z HM6264BI Series 8,192-word x 8-bit High Speed CMOS Static RAM HITACHI T h e H itach i H M 6 2 6 4 B I is 6 4 k -b it sta tic R A M o rg a n iz e d 8 -k w o rd x 8 -b it. It re a liz e s h ig h er perform ance and low pow er consum ption by 1.5