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    RAL A8 Search Results

    RAL A8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking D76

    Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D


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    ot-23/to-236abbav74marking d76 PDF

    Contextual Info: Product Data Sheet LCF158-50JAGR-A8 1-5/8" CELLFLEX Premium Attenuation Low-Loss Foam-Dielectric Coaxial Cable Product Description CELLFLEX®1-5/8" premium attenuation low loss flexible cable, grey jacket similar to RAL 7004 Application: Main feed line 1-5/8" CELLFLEX® Low-Loss Foam Dielectric


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    lcf158-50jagr-a8 PDF

    eeg using microcontroller

    Abstract: s18a
    Contextual Info: NSAM266SP M National Semiconductor P NSAM266SP CompactSPEECH Digital Speech Processor with Full-Duplex Speakerphone G e n e ral D escrip tion The NSAM 266SP is a member of National Semiconductor's Com pactSPEECH Digital Speech Processor family. This processor provides Digital Answering Machine DAM func­


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    nsam266sp266spnm29a040nm29a080+616-bitv12enapimmbd4148tlc76eeg using microcontrollers18a PDF

    IC 4017 B

    Contextual Info: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 w ords by 8 b its. The in te g ral control circu itry an d lith ­


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    4017y2048kx8bq4017216-bit+3bq4017/bq4017y2048kic 4017 b PDF

    128KX16

    Abstract: DQ10C
    Contextual Info: BENCHMARQ_ bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ral control circu itry an d lith ­


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    bq4024/bq4024y128kx1640-pin10-year+3bq4024152-bitdq10c PDF

    CD135

    Abstract: 315WV GE 72 F 9* capacitor D10R 1166 GE ge capacitor 3300 uF 450 suntan electrolytic
    Contextual Info: ALUMINUM ELECTROLYTIC CAPACITOR Suntan GE N E RAL, M I N IATU R I Z E D FEATU R E S TS13D CD135 ‧ ‧ ‧ ‧ Load life of 2000 hours at 85℃ Size may be selected High ripple current Used for computers, communication powers and inverters ‹ Specifications


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    ts13dcd135120hz315wv+112000hours64x9664x11564x13077x11577x130ge 72 f 9* capacitord10r1166 gege capacitor 3300 uf 450suntan electrolytic PDF

    TOSHIBA MG75

    Abstract: TC59SM716FT
    Contextual Info: TO SH IBA THLY6480X1 M G -7 5 #-75L#-80#-80L TENTATIVE TOSHIBA HYBRID DIGI rAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY6480X1MG is a 8,388,608-word by 6- -bit synchronous dynamic RAM module consisting of four TC59SM716FT/FTL DRAMs on a printed circ ait board.


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    thly6480x1mg-75608-word64-bit+4thly6480x1mgtc59sm716ft/ftltoshiba mg75tc59sm716ft PDF

    2732 eprom

    Abstract: interfacing the 2732 eprom 2732 memory chip 305 5VL 2732 5VL 305 2732eprom
    Contextual Info: R09333B/C R09333HR .I NI RAl INS Kl 'Ml Nl 32,768 Bit Static Read Only Memory READ ONLY M EM O RY FEATURES • 4096 x 8 Organization — Ideal for Microprocessor Memory Systems ■ Single +5 Volt Supply ■ TTL Compatible — All Inputs and Outputs ■ Static Operation — No Clocks Required


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    r09333b/cr09333hr450nsro-3-9333b+10350nsr0-3-9333cro-3-93332732 eprominterfacing the 2732 eprom2732 memory chip305 5vl27325vl 3052732eprom PDF

    buffers output current 100mA

    Abstract: R09464C L1114 c520
    Contextual Info: i! N \ RAl INSI RUM I N l R09464B/C/D R09464AB/AC/AD PRELIMINARY INFORMATION READ ONLY MEMORY 65,536 Bit Static Read Only Memory FEATURES PIN CONFIGURATION • ■ ■ ■ ■ ■ ■ 24 L E A D D U A L IN L IN E 8192 x 8 O rganization Fully Static O peration


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    r09464b/c/dr09464ab/ac/ad100pfr09464+8r09464a300ns100mar09464dbuffers output current 100mar09464cl1114c520 PDF

    Contextual Info: [ASAHI KASEI] [AK7744] AK7744ET 24bit 3ch ADC + 24bit 4ch DAC with Audio DSP 1. General Description The AK7744 is a highly integrated audio processing IC featuring four 24-bit D/A converters, a stereo and monau ral input 24-bit A/D and on-chip DSP. The four D/A converters with 107dB dynamic range, and A/D with 97dB dyn


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    ak7744ak7744et24bit24-bit+3107db48khz24kbit PDF

    AK7744VT

    Abstract: AK7744 MARKING AMIC MPX16 AK77 AMIC date code marking 3072fs dbus
    Contextual Info: [ASAHI KASEI] [AK7744] AK7744VT 24bit 3ch ADC + 24bit 4ch DAC with Audio DSP 1. General Description The AK7744 is a highly integrated audio processing IC featuring four 24-bit D/A converters, a stereo and monau ral input 24-bit A/D and on-chip DSP. The four D/A converters with 107dB dynamic range, and A/D with 97dB dyn


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    ak7744ak7744vt24bit24-bit+9107db48khz24kbitmarking amicmpx16ak77amic date code marking3072fsdbus PDF

    MS0570-E-01

    Abstract: AK7744ET cd1517 AK7744 MPX16 8 pin marking code D23 AMIC date code marking
    Contextual Info: [ASAHI KASEI] [AK7744] AK7744ET 24bit 3ch ADC + 24bit 4ch DAC with Audio DSP 1. General Description The AK7744 is a highly integrated audio processing IC featuring four 24-bit D/A converters, a stereo and monau ral input 24-bit A/D and on-chip DSP. The four D/A converters with 107dB dynamic range, and A/D with 97dB dyn


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    ak7744ak7744et24bit24-bit+8107db48khz24kbitms0570-e-01cd1517mpx168 pin marking code d23amic date code marking PDF

    Contextual Info: TOS H IB A UC/UP 54E J> m TGTTSm 0D53Ö31 TO SH IB A 1. TbB TMP68442 INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to m axim ize performance and throughput. The TMP68442 extended dual-direct memory access controller (EDDMA) is designed to com plem ent the perform ance and a rch ite ctu ral


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    tmp68442tlcs-68000tmp68450eddma-109 PDF

    Contextual Info: Suntan ALUMINUM ELECTROLYTIC CAPACITOR GE N E RAL, M I N IATU R I Z E D TS13D CD135 FEATU R E S Load life of 2000 hours at 85℃ Size may be selected High ripple current Used for computers, communication powers and inverters  Specifications I T E M S P E R F O R M A N C E


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    ts13dcd135120hz315wv+62000hours64x9664x11564x13077x11577x130 PDF

    6l6gb

    Abstract: tube 6L6 6L6 tube 6l6gb tube harrison 248 6l6, tube
    Contextual Info: BEAM POWER TUBE GE NE RAL DATA E le c tri c a l: H e a t e r , fo r Un i p o t e n t i al C a th o d e : V o l t a g e . 6.3 ac o r d c v o l t s C u r r e n t . 0.9 ajnp D ir e c t In te r e le c t ro d e C a pa cita nce s A p p r o x . :0


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    b7-1292cs-9252ri92cm-4580r2grid-n22+992cm-458ir292cm-4966r292cm--4608ri6l6gbtube 6l66l6 tube6l6gb tubeharrison 2486l6, tube PDF

    schroff SPG

    Abstract: GST18 SATA disk controller SLT3-PAY-2F2U-14 schroff SPG 124
    Contextual Info: Main Catalog 24th Edition Main Catalog Schroff gmbh, Langenalber Strasse 96–100, D-75334 Straubenhardt WWW.PENTAIREQUIPMENTPROTECTION.COM Equipment Protection Solutions 24th Edition | October 2012 39601-641 2012 Pentair Equipment Protection 18002_Hauptkatalog_Schroff_Umschlag_AK03_EN.indd 1


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    d-75334schroff spggst18sata disk controller+2slt3-pay-2f2u-14schroff spg 124 PDF

    Contextual Info: 4 TH IS DRAWING COPYRIGHT IS 4 U N P U B L IS H E D . 2003 RELEASED BY ^ C O ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 NOV ,2003- R E V IS IO N S R E S ER V ED . © P LTR D E S C R IP TIO N C REVISED DATE E C R - 0 6 - 0 2 1 1 17 DWN APVD


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    12mar0831mar2000 PDF

    Contextual Info: 93AA46/56/66 & M icro ch ip 1.8 Volt CMOS Serial Electrically Erasable PROMs FEATURES DESCRIPTION • Single supply with programming operation down to 1.8 V • Low power CMOS technology — 70 |iA typical active READ current at 1.8 V — 2 jiA typical standby current at 1.8 V


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    93aa46/56/6693aa4693aa5693aa66+393aa46x/56x/66x93aa46t/56t/66t93aa46xt/56xt/66xt PDF

    lc46

    Abstract: serial in serial out 93LC46 93LC56 93LC66
    Contextual Info: M 93LC46/56/66 ic r o c h ip 1K/2K/4K 2.0V Microwire Serial EEPROM BLOCK DIAGRAM FEATURES • Single supply with programming operation down to 2.0V Commercial only • Low power CMOS technology - 1 mA active current typical - 5 nA standby current (typical) at 3.0V


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    93lc46/56/6616-bit93lc4693lc56+593lc6693lc693lc66xtlc46serial in serial out PDF

    TC5144

    Contextual Info: 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well


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    tc514402j/z512kxtc514402j/z-80tc514402j/z--10+1tc5144 PDF

    Contextual Info: 93C56 M icrochip 2K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc. 93C56 is a 2K bit serial Electrically Erasable PROM. The device memory is configured as 256 x 8 or 128 x 16 bits depending on the ORG pin configuration. Advanced CMOS technology


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    93c56ds11156e-793c56tds11156e-8 PDF

    Contextual Info: ADVANCE MICRON I 4 MEG TECHNOIOSV. INC. SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, OPTIONAL EXTENDED REFRESH, FAST PAGE OR EDO PAGE MODE PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual-in-line memory module (DIMM)


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    mt8ldt432h72-pin440mw048-cycle+1128ms PDF

    Z80 INTERFACING TECHNIQUES

    Abstract: TC514 TC514402J CAWR
    Contextual Info: - ^ ~ 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well


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    tc514402j/z512kxtc514402j/z--80z80 interfacing techniques+3tc514tc514402jcawr PDF

    HA 1156 wp

    Abstract: YXXXX
    Contextual Info: Order this document by MCM516165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information M CM 516165BV 16M CMOS Wide DRAM Family EDO, 1M x 1 6 ,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50 i CMOS high-speed silicon-gate process technology. It includes devices organized as 1,048,576


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    mcm516165bv/d516165bvmcm516165bvmcm518165bv+31atx35269-0ha 1156 wpyxxxx PDF