RAL A8 Search Results
RAL A8 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking D76Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D |
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OT-23/TO-236AB BAV74 marking D76 | |
Contextual Info: Product Data Sheet LCF158-50JAGR-A8 1-5/8" CELLFLEX Premium Attenuation Low-Loss Foam-Dielectric Coaxial Cable Product Description CELLFLEX®1-5/8" premium attenuation low loss flexible cable, grey jacket similar to RAL 7004 Application: Main feed line 1-5/8" CELLFLEX® Low-Loss Foam Dielectric |
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LCF158-50JAGR-A8 | |
eeg using microcontroller
Abstract: s18a
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NSAM266SP NSAM266SP 266SP NM29A040 NM29A080 16-bit V12ENAPI MMBD4148 MMBD4148 TLC76 eeg using microcontroller s18a | |
IC 4017 BContextual Info: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 w ords by 8 b its. The in te g ral control circu itry an d lith |
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4017Y 2048Kx8 bq4017 216-bit bq4017/bq4017Y 2048K IC 4017 B | |
128KX16
Abstract: DQ10C
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bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit DQ10C | |
CD135
Abstract: 315WV GE 72 F 9* capacitor D10R 1166 GE ge capacitor 3300 uF 450 suntan electrolytic
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TS13D CD135 120Hz) 315WV, 2000hours 64x96 64x115 64x130 77x115 77x130 CD135 315WV GE 72 F 9* capacitor D10R 1166 GE ge capacitor 3300 uF 450 suntan electrolytic | |
TOSHIBA MG75
Abstract: TC59SM716FT
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THLY6480X1 MG-75 608-WORD 64-BIT THLY6480X1MG TC59SM716FT/FTL TOSHIBA MG75 TC59SM716FT | |
2732 eprom
Abstract: interfacing the 2732 eprom 2732 memory chip 305 5VL 2732 5VL 305 2732eprom
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R09333B/C R09333HR 450ns RO-3-9333B 350ns R0-3-9333C RO-3-9333 2732 eprom interfacing the 2732 eprom 2732 memory chip 305 5VL 2732 5VL 305 2732eprom | |
buffers output current 100mA
Abstract: R09464C L1114 c520
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R09464B/C/D R09464AB/AC/AD 100pf R09464 R09464A 300ns 100mA R09464D buffers output current 100mA R09464C L1114 c520 | |
Contextual Info: [ASAHI KASEI] [AK7744] AK7744ET 24bit 3ch ADC + 24bit 4ch DAC with Audio DSP 1. General Description The AK7744 is a highly integrated audio processing IC featuring four 24-bit D/A converters, a stereo and monau ral input 24-bit A/D and on-chip DSP. The four D/A converters with 107dB dynamic range, and A/D with 97dB dyn |
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AK7744] AK7744ET 24bit AK7744 24-bit 107dB 48kHz. 24kbit | |
AK7744VT
Abstract: AK7744 MARKING AMIC MPX16 AK77 AMIC date code marking 3072fs dbus
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AK7744] AK7744VT 24bit AK7744 24-bit 107dB 48kHz. 24kbit AK7744VT MARKING AMIC MPX16 AK77 AMIC date code marking 3072fs dbus | |
MS0570-E-01
Abstract: AK7744ET cd1517 AK7744 MPX16 8 pin marking code D23 AMIC date code marking
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AK7744] AK7744ET 24bit AK7744 24-bit 107dB 48kHz. 24kbit MS0570-E-01 AK7744ET cd1517 MPX16 8 pin marking code D23 AMIC date code marking | |
Contextual Info: TOS H IB A UC/UP 54E J> m TGTTSm 0D53Ö31 TO SH IB A 1. TbB TMP68442 INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to m axim ize performance and throughput. The TMP68442 extended dual-direct memory access controller (EDDMA) is designed to com plem ent the perform ance and a rch ite ctu ral |
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TMP68442 TLCS-68000 TMP68442 TMP68450) EDDMA-109 | |
Contextual Info: Suntan ALUMINUM ELECTROLYTIC CAPACITOR GE N E RAL, M I N IATU R I Z E D TS13D CD135 FEATU R E S Load life of 2000 hours at 85℃ Size may be selected High ripple current Used for computers, communication powers and inverters Specifications I T E M S P E R F O R M A N C E |
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TS13D CD135 120Hz) 315WV, 2000hours 64x96 64x115 64x130 77x115 77x130 | |
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6l6gb
Abstract: tube 6L6 6L6 tube 6l6gb tube harrison 248 6l6, tube
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B7-12) 92CS-9252RI 92CM-4580R2 GRID-N22 92CM-458IR2 92CM-4966R2 92CM--4608RI 6l6gb tube 6L6 6L6 tube 6l6gb tube harrison 248 6l6, tube | |
schroff SPG
Abstract: GST18 SATA disk controller SLT3-PAY-2F2U-14 schroff SPG 124
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D-75334 schroff SPG GST18 SATA disk controller SLT3-PAY-2F2U-14 schroff SPG 124 | |
Contextual Info: 4 TH IS DRAWING COPYRIGHT IS 4 U N P U B L IS H E D . 2003 RELEASED BY ^ C O ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 NOV ,2003- R E V IS IO N S R E S ER V ED . © P LTR D E S C R IP TIO N C REVISED DATE E C R - 0 6 - 0 2 1 1 17 DWN APVD |
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12MAR08 31MAR2000 | |
Contextual Info: 93AA46/56/66 & M icro ch ip 1.8 Volt CMOS Serial Electrically Erasable PROMs FEATURES DESCRIPTION • Single supply with programming operation down to 1.8 V • Low power CMOS technology — 70 |iA typical active READ current at 1.8 V — 2 jiA typical standby current at 1.8 V |
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93AA46/56/66 93AA46) 93AA56) 93AA66) 93AA46/56/66 93AA46X/56X/66X 93AA46T/56T/66T 93AA46XT/56XT/66XT | |
lc46
Abstract: serial in serial out 93LC46 93LC56 93LC66
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93LC46/56/66 16-bit 93LC46) 93LC56) 93LC66) 93LC56 93LC6 93LC66XT lc46 serial in serial out 93LC46 93LC66 | |
TC5144Contextual Info: 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well |
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TC514402J/Z TC514402J/Z. 512Kx TC514402J/Z-80 TC514402J/Z--10 TC5144 | |
Contextual Info: 93C56 M icrochip 2K CMOS Serial Electrically Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc. 93C56 is a 2K bit serial Electrically Erasable PROM. The device memory is configured as 256 x 8 or 128 x 16 bits depending on the ORG pin configuration. Advanced CMOS technology |
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93C56 93C56 DS11156E-7 93C56T DS11156E-8 | |
Contextual Info: ADVANCE MICRON I 4 MEG TECHNOIOSV. INC. SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, OPTIONAL EXTENDED REFRESH, FAST PAGE OR EDO PAGE MODE PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual-in-line memory module (DIMM) |
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MT8LDT432H 72-pin, 440mW 048-cycle 128ms | |
Z80 INTERFACING TECHNIQUES
Abstract: TC514 TC514402J CAWR
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TC514402J/Z TC514402J/Z. 512Kx TC514402J/Z--80 TC514402J/Zâ Z80 INTERFACING TECHNIQUES TC514 TC514402J CAWR | |
HA 1156 wp
Abstract: YXXXX
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MCM516165BV/D 516165BV MCM516165BV) MCM518165BV) 1ATX35269-0 HA 1156 wp YXXXX |