2048KX8 Search Results

Contextual Info: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium

Contextual Info: h bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ g ral control c ircu itry and lith iu m

Contextual Info: ^E D I _ EDI8F82048C Electronic Dvtions Inc. Commercial Sixteen Megabit SRAM Module 16 Megabit 2Megx8 Static RAM CMOS, Module Features The EDI8F82048C is a 16 Megabit CMOS Static RAM 2048Kx8 bit CMOS Static based on sixteen 128Kx8 Static RAMs mounted on a multi- Random Access Memory

bq4017

Abstract: bq4017Y
Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: bq4017/bq4017Y BENCHMARQ 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >• D a ta re te n tio n in th e absence of pow er T h e CM OS bq4017 is a n o n v o latile 16,777,216-bit sta tic RAM org an ized a s 2,09 7 ,1 5 2 w o rd s b y 8 b its. T h e in te g r a l c o n tro l c irc u itry a n d l it h ­

A18E

Abstract: A18E 40
Contextual Info: bq4017/bq4017Y U IM IT R O O E - 2048Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lith ­

Contextual Info: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Abstract: bq4017Y
Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

Contextual Info: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Abstract: bq4017Y
Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Abstract: BQ4017MC-70 bq4017Y BQ4017YMC-70
Contextual Info: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

bq4017

Contextual Info: bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited

Contextual Info: Not Recommended for new Designs bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable

Contextual Info: LY62102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 0.3 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION

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Contextual Info: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at