RAIN Search Results

Contextual Info: TOSHIBA July 1997 TIM1414-15-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS O utput Power at ldB Compression Point Power Gain at ldB Compression Point D rain C urrent — ; Power Added Efficiency SYMBOL PldB GldB CONDITION VDS= 9V f= 13.75-14.5GHz Ids

947-75

Contextual Info: Oct. 1997 JS9P08-AS Draft 1 RF PERFORMANCE. SPECIFICATIONS CHARACTERISTICS O utput Powder at ldB Com pression Point Pow er Gain, at ldB Compression Point D rain C urrent Pow er Added Efficiency ( Ta= 2K°C 1 SYMBOL CONDITION MIN. TYP. M AX U N IT PldB 21.5 23.0 — dBm

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG8G4GM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The D rain is Isolated from Case. . 4 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low D r a i n-Source ON Resistance

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS A MATERIAL INSULATOR: LCP COLOR: BLACK SHIELDING: BRASS TIN PLATED CONTACT: PHOSPHOR BRONZE CONTACT TYPE: STAMPED LEVEL: 3 AS PER CECC 75 301-802 ENVIRONNEMENTAL OPERATING TEMPERATURE: -25 TO 85°C FLAMABILITY RAING: UL94-V0

CK408

Abstract: CK-408
Contextual Info: SÌ4480DY Vishay Siliconix N-Channel 80-V D-S MOSFET V d s (V) R DS(ON) (& ) Id M 0.035 @ V GS = 10 V ± 6.0 0.040 @ V QS = 6.0 V ± 5.5 D Q SO-8 <j s Ô s N-Ch an n el M O S F E T liliia y a im fiiiiiiiiH fiá fl PA RA M ETER SYM BOL LIMIT D rain-Source Voltage

2SK1725

Contextual Info: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage

SMP25N05-45L

Contextual Info: Tem ic SMP25N05-45L Siliconix N-Chaniiel Enhancement-Mode Transistor, Logic Level 175 °C Maximum Junction Temperature Product Summary Jd IA 0.045 @ V qs = 10 V 25 0.060 @ VGS = 4.25 V 25 50 D O TO-220AB o .►JE D rain C o n n e c ted to Tab G D S Top View

Contextual Info: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss

Contextual Info: Æ lltron PRODUCT DEVICES.INC. 1000V, 4 .4A, 4 .0 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D ra in - S o u rc e Vo 1t . 1 D rain-G ate Voltage (RGS-1.0Mo ) (1) Gate-Source V oltage Con t inuous D rain Current Continuous (Tc = 25* C) D ra in C u rre n t P u ls e d ( 3 )

AX8896

Contextual Info: 2SJ287 LD L o w D rive S eries V DSs = 3 0 V 2062 P Channel Power M OSFET F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 2 5 °C D rain to Source Voltage VDSS Gate to Source Voltage

7842

Contextual Info: 2SK1727 LD L o w D rive S eries V D 2 08 7 60V N Channel Power M OSFET F e a tu re s •Low ON resistance. • V ery high-speed switching. • Low-voltage drive. ■M eets radial taping. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage

23marking

Contextual Info: GaAs N CHANNEL DUAL GATE MES TYPE 3SK274 U n it in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1 1 0. 1 MAXIMUM RATINGS Ta = 25°C 1. 2 5 ± 0 - 1 CHARACTERISTIC G atel-D rain Voltage SYMBOL RATING VG1D0 -9 V G ate2-D rain Voltage VG2D0 -9 V G atel-Source Voltage

2sk1468

Contextual Info: 2SK1468 2083a 2092A LD L o w D riv e S e rie s V DSS= 3 0 V N Channel Power M OSFET f '3 7 6 9 A F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage

2092A

Contextual Info: 20 83A LD L o w D rive S eries V Dss = 6 0 V 2092A P Channel Power M OSFET \E 3 7 6 4 A F e a tu re s •Low ON resistance ■Very high-speed switching • Low-voltage drive A bsolute M axim um R atin g s at Ta = 25°C D rain to Source Voltage V d ss Gate to Source Voltage

8897

Contextual Info: 2SJ288 2062 LD L o w D rive S eries VDs s = 6 0 V P Channel Power M OSFET 4308 F e a tu re s •Low ON resistance. • Very high-speed switching. - Low-voltage drive. A b so lu te M ax im u m R a tin g s a t Ta = 25°C D rain to Source Voltage Vdss G ate to Source Voltage

Contextual Info: PROFESSIONAL QUALITY, HIGH DENSITY SUBMINIATURE-D CONNECTORS WIN-DD Series FOR INDOOR/OUTDOOR NONHAZARDOUS ENVIRONMENTAL APPLICATIONS WHERE PROTECTION FROM DUST, RAIN, HOSE DIRECTED WATER AND LIMITED WATER IMMERSION IS REQUIRED C O N T A C T V A R IA N T S

2SJ284

Abstract: marking am
Contextual Info: Ordering number: EN4220 2SJ284 P-Channel M OS Silicon F E T Very High-Speed Switching Applications F e a tu re s • Low ON resistan ce. • V ery high-speed sw itching. • Low-voltage drive. A b s o lu te M a x im u m R a tin g s a t T a = 25°C D rain to Source Voltage

voltage stabiliser

Abstract: 7475 pin of 7475 neon stabiliser
Contextual Info: 7475 STABILISING TU B E Neon-filled voltage stabiliser. OPERATING CONDITIONS V ignition max V burning I qulsQcant I max I rain A.C. resistance 140 90-110 4 8 1 300 r V mA mA mA ohms DIMESSIOKS taniTjantlT OF KLECTHOBBS AID BASE CO8MECTI0I3 BRITISH 4-PIB BASE

1.2 Micron CMOS Process Family

Abstract: CMOS GATE ARRAYs
Contextual Info: High Reliability Fast CMOS Gate Arrays U N IV E R S A L S E M IC O N D U C T O R INC. ranging from 100 to 6000 equivalent gates and a maximum pin count ranging from 24 to 120. FEATURES: • • • • • Single & Dual Layer Metal Source/D rain Contacts Programmable

Contextual Info: FULL SPECTRUM RAINBOW LEDs Liglt R T M T1% 5mm , T3 (8mm) LOW DOME ABSOLUTE MAX. RATINGS Ta=25*C COLOR Pd mW Up mA If mA Vr V If mA typ 5mm RAINBOW (RGB) LOW [)OM E LED CLEEAR D IS -1 0 2 4 -0 0 2 NOTE 2 CLEAR D IS -1 0 2 4 -1 0 2 NOTE 2 DIFFUSED D IS -1 0 2 4 -0 0 3

5mm rainbow led

Contextual Info: L ig n ’ li t e ; j FULL SPECTRUM RAINBOW LEDs T1 % 5mm , NEW 6 TERMINAL LED LEDTRONICS PART NO. LENS COLOR Actual Size ELECTRO-OPTICAL CHARACTERISTICS Ta=25*C ABSOLUTE MAX. RATINGS Ta=25'C L.E.D. COLOR Pd mW lfP mA If mA Vr V If mA ty p Iv mcd Vf VIEW IrMAX \ p

NTE3303

Contextual Info: NTE3303 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: TA = +25°C unless otherwise specified

Contextual Info: TOSHIBA July 1997 TIM1414-7-252 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL O u tp u t Power at ldB Compression Point PlcLB Power Gain at ldB Compression Point G ldB D rain C urrent I ds i>dd Power Added Efficiency CONDITION f =13.75-14.5GHz 37.0

Contextual Info: 9R28064 Flat - Rainbow 9R280XX Series For more information please call 1-800-Belden1 See Put-ups and Colors Description: Belden's .050" pitch, color-coded PVC flat cable allows for quick identification and circuit tracing, along with easy breakouts for circuit