11AGE Search Results

Contextual Info: SPECIFICATION 53 *o.t 47,04 D ‘ 0 .1 5 0, 2 5 B 03,1 ‘ 0.1 O' lD CNI 1*y W Csj W i 0 9f £ * l * X i °E * 1 * 500 F ilter C type Copoc i tonce 470pf±20% Working Vo 11age 10Ov Current Rating 7.5A In sulat ion Resistance >lGn CO 3 8 , 9 '° — Mo t i ng Cyc1es

2SC998

Abstract: 2sc998 transistor 10N40 0F34 Toshiba 2SC998
Contextual Info: 5; ' J D y N P N I t i 5 > * = y J , U 7 L s - ï B h 5 y S ; Z 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR O 1 5 0 ~ 1 7 5MHz * 2 s c 998 ) o VHF Power Amplifier Application (Low Supply a f i l i é INDUSTRIAL APPLICATIONS Vo 11age Use) ° Un it: mm Land-Mobile Power Amplifier and Frequency

SDF440

Contextual Info: Æ iitro n PRODUCT DEVICES.INC. ATÂl©' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source Volt. l Dra in-Ga te Vo 11age (RGS=1.0Mn) (1) Gate-Source Voltage Continuous Drain Current Continuous (Tc = 25°C) Drain Current Pulsed(3)

SDF240

Contextual Info: Ætttron PRODUCT DEVICES.INC. CATALO' N-CHANNEL ENHANCEMENT MOS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Dra in-Ga te Vo 11age (R g s = 1.OMn) (1) Gote-Source Voltage Con t inuous Drain Current Continuous (Tc = 2 5 “C)

Contextual Info: _ 1_ SPECIFICATION 53*0 .t 47,04 ‘ 0.15 D LO «® ®„ ®«. ®* ® « ° J ® « ® e ® ^ ® ^ ® » - . 8 CNI 9 II 01 i 8 'i 9 S 9 E Z L Moling Cycles 500 F ilter C type Copocitonce 10OOp f ±20% Work i ng Vo 11age

Contextual Info: SPECIFICATION 39,1 ‘0,t 33,3*0.15 0,25 00,6 D 6-o Nut thread ln CNI CM CO 1 11 I i PCB Layout, Component side 0,25 03,6 ln CM o B F i l t e r type C Copoc i tonce 470pf±20* Working Vo 11age 10Ov Current Rating 7.5A Insulat ion Resistance > 1GQ ATTENUATION

Contextual Info: _1_ SPECIFICATION 53 ‘ O.t 47, 04 *0.15 D 0,25 B 03,1 * 0.1 & lT> CM W V W t e 8f t s 9s s% eEs ^ J NK 3 8 , 9 ,0 •>— B 0, 25 1 Mol i ng Cycles 500 Copoci tonce 1000pf±20% Work i ng Vo 11age 10Ov Current Rat i ng 7.5A

Contextual Info: SPECIFICATION D Mot ing Cycles 500 F ilter C type Copoc i tonce A70p f ±20% Working Vo 11age 10Ov Current Rating 7.5A Insulot ion Resistance >1GC1 FREQUENCY MHz S o ld e r bucket ATTENUATION IdB) 5 for AWG 20 - 10 IdB 50 10dB 100 15dB 500 35dB 1000 32dB

mi 809

Contextual Info: FILM DIELECTRIC TRIMMERS Hjgh tem peratura type •» Ho-using dimensions 6 mm x 8 mm x S mm ® Por basse grief of 2J54 mm F o r p ro fe s io n a l applications, e g. fin e adjustm ent o f h .f. tunecí circuits OUÎCK REFERENCE D A TA % m - '^ m a x R¿îterf vo 11age OC}

Contextual Info: _ 1_ SPECIFICATION D Moling Cycles F i l t e r type Copoc i tonce 500 C 470p f ±20% Working Vo 11age lOOv Current Rating 7.5A 1nsulotion Resistonce > 1GO FREQUENCY MHzl ATTENUATION (dB 5 03,6 - 10 1dB 50 10dB 100 15dB 500 35dB 1000 32 dB B BE ] B D e t a il.

Contextual Info: T O S H IB A TMP93PS40 Low Voltage / Low Power CMOS 16-bit Micro-controller TMP93PS40F TMP93PS40DF 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93PS40 is OTP type MCU which includes 64K byte One-time PROM. Using the adapter-socket BM11109 or BM11129 , you can w rite and verify the data for the

Contextual Info: Æ lltron PRODUCT CÂTÂLÛ« DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FE T 1177 S L U E H E R O N B L V D . • RIVIERA BEACH. FLORIDA 33404 T E L : 407; 848-4311 • TLX: 51-3435 • FAX: (407 863-5946 400V, 5.5A, l.On ABSOLUTE MAXIMUM RATINGS PARAMETER VDSS

Contextual Info: Æ lltron PRODUCT DEVICES.INC. 1000V, 4 .4A, 4 .0 Q ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D ra in - S o u rc e Vo 1t . 1 D rain-G ate Voltage (RGS-1.0Mo ) (1) Gate-Source V oltage Con t inuous D rain Current Continuous (Tc = 25* C) D ra in C u rre n t P u ls e d ( 3 )

M51404AFP

Abstract: circuit diagram of a simple tv lcd on off M51403FP
Contextual Info: MITSUBISHI ICs TV M51403FP/GP PAL VIDEO CHROMA SIGNAL PROCESSOR DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M51403FP/GP is a sem iconductor integrated circuit for processing video signals in a PAL system color liquid crystal [T O SE C A M B-Y Input (LC) television set.

Contextual Info: PRODUCT N-CHANNEL ENHANCEMENT MOS FET 600V, 15 A , 0 . 5 0 G SDF15N60 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE OPTIONAL MIL-S-19500

DIODE 1JU

Abstract: SDF24N50
Contextual Info: OATÂLQQ_ =Æiltran PRODUCT , N-CHANNEL ENHANCEMENT MOS FET 500V, 24A , 0.25H SDF24N50 GAF FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

Contextual Info: SHARP SPEC No. ISSUE: E L 0 8 7 1 29 ful. 19. 1 9 % SPECIFICATIONS Product 256k Type SRAM LH 5 2 2 5 6 A V H T Model No. LH525AV5 ♦This specifications contains 1 5 pages including the cover and appendix. If you have any objections, please contact us befaf^^.^fOifcSurchasing order.

Contextual Info: PRODUCT CÂTÂLOi Æiitron N-CHANNEL ENHANCEMENT MOS FET 1000V, 9A, 1.4 0 SDF9N100 GAF FEATURES • • • • • • • • RUGGED PA CKAGE HI-REL CO NS TR UC TI ON CERAMIC EY EL ET S LEAD B E ND IN G OPTIONS COPPER CORED 52 AL LO Y PINS LOW IR LOSSES

Contextual Info: HYUNDAI 512K x B-bit HYZ9FD4D Series CMOS 5.D V-Dnly, Sector Erase Flash Memory Preliminary D ESCRIPTION The HY29F04D is a 4 Megabit, 5.D Vtolts only Flash m em ory device organized as a 512k X 9 bits each. The HY29FD40 is offered in an industry standard 32 pin package which is backward com patible Id 1 M egabit and also

fet 900v

Abstract: SDF3N90
Contextual Info: PRODUCT ATÂL01 Æ \itxon DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 900V ; 3.O A , 4.6 Q SDF3N90 SDF3N90 JAA JAB FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS

A37 diode

Abstract: diode a37 SDF21N60
Contextual Info: Æ w tro n devices.inc._ PRODUCT GATALQQ N-CHANNEL ENHANCEMENT MOS FET 600V, 21A , 0 . 3 0 Q ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER UNITS Drain-source Volt. l Drain-Gate Vo 1tage VDSS 600 Vdc VDGR GOO Vdc Gate-Source Voltage Cont inuous Drain Current Continuous

Contextual Info: T O SH IB A TM P93CW40/TM P93CW41 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CW40DF / TMP93CW41DF 1. OUTLINE AND DEVICE CHARACTERISTICS TMP93CW40/W41 are high-speed advanced 16-bit microcontrollers developed for controlling medium to large-scale equipm ent. The TMP93CW40/CW41 enable lowvoltage and low consumption power operation.

Contextual Info: SPEC No. ISSUE: o M S - J 0 9 1 0 2 Jan. 23. 1997 , PRELIMINARY S P E C I F I C A T I O N S Product 2 5 6k Type S R A M L H 5 2 2 5 6 A —1 0 L L Mode No. ♦This specifications contains L H 5 2 5 A L 9 ) 1 1 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.

Contextual Info: SHARP 1 SPEC No. ISSUE: To M S - J 0 9 5 0 2 Mav . 13. 1997 ; PRELIMINARY SPEC 1 F 1 CAT 1 ON S Product 2M Type S R A M LH59BV2000JS- 70L Model No. L H 5 9 B 2 4 S ♦This specifications contains 1 5 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.