QUADRANT PHOTODIODE CD Search Results

photodiode dvd cd

Abstract: S6695-01 dvd quadrant photodiode S6058 S7379-01 dvd photodiode
Contextual Info: PHOTODIODE Si PIN photodiode S7379-01, S6695-01, S6058 Quadrant photodiode / plastic package These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk. Custom-designed devices with different element shapes, number of elements, characteristics and packages are also available to meet your

S239P

Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted

Contextual Info: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Selection guide

Contextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high

Selection guide

Abstract: United Detector Technology PSD
Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

130RF

Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high

OPA132

Abstract: OPA2381 OPA300 OPA335 OPA350 OPA354 OPA355 OPA380 OPA381
Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high

Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high

Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high

OPA132

Abstract: OPA2381 OPA300 OPA335 OPA350 OPA354 OPA355 OPA380 OPA381
Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high

Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high

Contextual Info: OPA380 OPA2380 SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

Contextual Info: OPA380 OPA2380 SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

LOG112

Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380
Contextual Info: OPA380 OPA2380 SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

LOG112

Abstract: LOG114 OPA132 OPA2380 OPA300 OPA335 OPA350 OPA380 "LOG AMP"
Contextual Info: OPA380 OPA2380 SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007 Precision, High-Speed Transimpedance Amplifier FEATURES D D D D D D D D D D D DESCRIPTION > 1MHz TRANSIMPEDANCE BANDWIDTH EXCELLENT LONG-TERM VOS STABILITY BIAS CURRENT: 50pA max OFFSET VOLTAGE: 25µV (max)

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MSOP-10

Abstract: OPA2725 OPA2726 OPA725 OPA726
Contextual Info: OPA725, OPA2725 OPA726, OPA2726 SBOS278B − SEPTEMBER 2003 − REVISED JANUARY 2004 Very Low Noise, High-Speed, 12V CMOS Operational Amplifier FEATURES D D D D D D D D D D D DESCRIPTION BANDWIDTH: 20MHz SLEW RATE: 30V/µs FAST 16-BIT SETTLING TIME LOW NOISE: 6nV/√Hz typ at 100kHz

Contextual Info: OPA725, OPA2725 OPA726, OPA2726 SBOS278B − SEPTEMBER 2003 − REVISED JANUARY 2004 Very Low Noise, High-Speed, 12V CMOS Operational Amplifier FEATURES D D D D D D D D D D D DESCRIPTION BANDWIDTH: 20MHz SLEW RATE: 30V/µs FAST 16-BIT SETTLING TIME LOW NOISE: 6nV/√Hz typ at 100kHz

Contextual Info: OPA725, OPA2725 OPA726, OPA2726 SBOS278B − SEPTEMBER 2003 − REVISED JANUARY 2004 Very Low Noise, High-Speed, 12V CMOS Operational Amplifier FEATURES D D D D D D D D D D D DESCRIPTION BANDWIDTH: 20MHz SLEW RATE: 30V/µs FAST 16-BIT SETTLING TIME LOW NOISE: 6nV/√Hz typ at 100kHz

Contextual Info: OPA725, OPA2725 OPA726, OPA2726 SBOS278B − SEPTEMBER 2003 − REVISED JANUARY 2004 Very Low Noise, High-Speed, 12V CMOS Operational Amplifier FEATURES D D D D D D D D D D D DESCRIPTION BANDWIDTH: 20MHz SLEW RATE: 30V/µs FAST 16-BIT SETTLING TIME LOW NOISE: 6nV/√Hz typ at 100kHz

Contextual Info: THS4601 SLOS388B − OCTOBER 2001 − REVISED JUNE 2002 WIDEBAND, FETĆINPUT OPERATIONAL AMPLIFIER FEATURES D Gain Bandwidth Product: 180 MHz D Slew Rate: 100 V/µs D Maximum Input Bias Current: 100 pA D Input Voltage Noise: 5.4 nV/√Hz D Maximum Input Offset Voltage: 4 mV

15-V

Abstract: OPA627 OPA637 OPA655 THS4601 THS4601CD THS4601CDDA THS4601ID THS4601IDDA
Contextual Info: THS4601 SLOS388B − OCTOBER 2001 − REVISED JUNE 2002 WIDEBAND, FETĆINPUT OPERATIONAL AMPLIFIER FEATURES D Gain Bandwidth Product: 180 MHz D Slew Rate: 100 V/µs D Maximum Input Bias Current: 100 pA D Input Voltage Noise: 5.4 nV/√Hz D Maximum Input Offset Voltage: 4 mV