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    QUADRANT PHOTODIODE CD Search Results

    QUADRANT PHOTODIODE CD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPT301M
    Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125 Visit Texas Instruments Buy
    OPT101P-J
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P-JG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70 Visit Texas Instruments Buy
    OPT101P
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy
    OPT101PG4
    Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70 Visit Texas Instruments Buy

    QUADRANT PHOTODIODE CD Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    dvd quadrant photodiode

    Abstract: photodiode dvd cd S6695-01 quadrant photodiode quadrant photodiode CD Si PIN PHOTODIODE DVD common cathode photodiode S6058 CD/DVD pickup S7379-01
    Contextual Info: PHOTODIODE Si PIN photodiode S7379-01, S6695-01, S6058, S7547 Quadrant photodiode / plastic package These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk. S7547 is specifically developed for violet laser detection, providing greatly improved sensitivity at λ=410 nm.


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    s7379-01s6695-01s6058s7547+9se-171kmpd1053e04dvd quadrant photodiodephotodiode dvd cdquadrant photodiodequadrant photodiode cdsi pin photodiode dvdcommon cathode photodiodecd/dvd pickup PDF

    A1015 y

    Abstract: A1015
    Contextual Info: PHOTODIODE Si PIN photodiode S7379, S6695-01, S6058, S7547 Quadrant photodiode / plastic package These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk. S7547 is specifically developed for violet laser detection, providing greatly improved sensitivity at λ=410 nm.


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    s7379s6695-01s6058s7547+4se-171kmpd1053e02a1015 ya1015 PDF

    quadrant photodiode CD

    Abstract: S6695-01 S6058 quadrant photodiode S7379-01 dvd quadrant photodiode photodiode dvd cd dvd photodiode PIN photodiode crosstalk 47 AB
    Contextual Info: PHOTODIODE Si PIN photodiode S7379-01, S6695-01, S6058 Quadrant photodiode / plastic package These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk. Custom-designed devices with different element shapes, number of elements, characteristics and packages are also available to meet your


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    s7379-01s6695-01s6058se-171+8kmpd1053e06quadrant photodiode cdquadrant photodiodedvd quadrant photodiodephotodiode dvd cddvd photodiodepin photodiode crosstalk47 ab PDF

    photodiode dvd cd

    Abstract: S6695-01 dvd quadrant photodiode S6058 S7379-01 dvd photodiode
    Contextual Info: PHOTODIODE Si PIN photodiode S7379-01, S6695-01, S6058 Quadrant photodiode / plastic package These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk. Custom-designed devices with different element shapes, number of elements, characteristics and packages are also available to meet your


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    s7379-01s6695-01s6058se-171+4kmpd1053e05photodiode dvd cddvd quadrant photodiodedvd photodiode PDF

    S239P

    Abstract: quadrant detector quadrant photodiode CD S 239 P s 239 l L05 diode 1S239
    Contextual Info: TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted


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    s239pd-74025quadrant detectorquadrant photodiode cd+4s 239 ps 239 ll05 diode1s239 PDF

    S 239 P

    Abstract: S239P
    Contextual Info: Te m ic TELEFUNKEN Semiconductors S 239 P Silicon PIN Photo Quadrant Detector Description S239P is a monolithic silicon PIN photodiode array in a quadrant configuration. Four photodiodes on a single chip with a common cathode and separated by only 10æm are mounted


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    s239ps 239 p PDF

    C30844

    Abstract: C30845 rca 632 quadrant photodiode rca C30846 quadrant photodiode 303dbl0 92LS-S56S "S56S" PIN quadrant detector
    Contextual Info: RC/1 E G & G/CA N A D A / O P T OELEK 3G30fc.lD ODOOIDI Tfl4 « C A N A IO Electro Photodiode C30843 Optics C30844, C30845, C30846 DATA SHEET Quadrant N-Type Silicon p-i-n Photodetectors • Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2 ■ Low Operating \foltage —


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    c30843c30844c30845c30846+825-mmrca 632quadrant photodiode rcaquadrant photodiode303dbl092ls-s56ss56spin quadrant detector PDF

    Contextual Info: E G & G/CANADA/OPTOELEK I t C i l • IO Optics 303DtilD DDOOlQ'ì TÔH « C A N A “p - Y / - * ' 3 Photodiode C30843 C30844, C30845, C30846 DATA S H EET Quadrant N-Type Silicon p-i-n Photodetectors ■ Broad Range of Photosensitive Suface Areas — 5 mm2 to 100 mm2


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    303dtildc30843c30844c30845+2c30846coverin68 PDF

    quadrant photodiode CD

    Abstract: C30843 quadrant photodiode rca RCA H 410 quadrant detector large area quadrant photodiode RCA H 940 LM 8105 C30845 740417
    Contextual Info: C I A INC/ t ELECTRO C I 7M 84b7S 000010=1 b Photodiode C30843 G30844, C30845, C30846 DATASHEET ID E OPTICS J I Quadrant 5 • Silicon p-i-n Photodetectors ■ B road R ange of P hotosensitive S uface A reas — 5 mm* to 100 m m 2 ■ Low O perating Voltage—VR - . 4 5 V


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    quadrant detector

    Abstract: detector active area size nep J16QUAD-8D6-R05M-HS
    Contextual Info: J16PS Room Temperature Germanium Position Sensors j udson Figure 35-2 Example of Position Linearity • J16PS P osition S ensors A Ge position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y beam position


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    j16psquadrant detectordetector active area size nepj16quad-8d6-r05m-hs PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


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    cat0506pfnd-100qfnd-100c30724e+7yag-444-4aingaas apd quadrantperkinelmer fnd-100qsi apd photodiodenir emitter leds with 700 to 900 nmspcm-aqrc30950e PDF

    PIN-040A

    Abstract: osd15-5t OSD5.8-7Q OSD5-5T PIN-020A PIN-44DI OSD35-7Q SPOT-15-YAG OSD15-0 bpx65r
    Contextual Info: YAG Series Nd:YAG Optimized Photodetectors The YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing low light intensities, such as the light reflected from objects illuminated by


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    -013duv-01315osd-5-0osd15-0+13osd15-5tbpx-65rbpx-65uv-001uv-005pin-040aosd5.8-7qosd5-5tpin-020apin-44diosd35-7qspot-15-yagbpx65r PDF

    epitaxx

    Abstract: large area quadrant photodiode ETX1300RST ETX75FJ
    Contextual Info: 24E D • 33bG40b GGGGObB =1 Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,


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    QD50-0

    Abstract: APD, laser, range, finder 850nm APD Photodiode apd high sensitivity quadrant avalanche photodiode "laser range finder" APD-500 apd gain control OSD60-0 CD-1705
    Contextual Info: Avalanche Photodiodes Ultra High Gain Silicon Photodetectors Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI


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    850nmos-p200osd100-0aosd100-5ta+10qd50-0apd, laser, range, finder850nm apdphotodiode apd high sensitivityquadrant avalanche photodiodelaser range finderapd-500apd gain controlosd60-0cd-1705 PDF

    PIN-125DPL

    Abstract: PIN-10DP InGaAs APD quadrant OSD1-5T pin-6dp PIN-10AP PIN-10DPI PIN-13DPI PIN-220DP PIN-25D
    Contextual Info: Photovoltaic Series Planar Diffused Silicon Photodiodes The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral


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    os-p200osd100-0aosd100-5tapin-125dpl+9pin-10dpingaas apd quadrantosd1-5tpin-6dppin-10appin-10dpipin-13dpipin-220dppin-25d PDF

    Transmissive Optical Sensor 3 pin

    Abstract: photoconductive light sensor yellow LED Reflective Optical Sensor APD-300L OPTICAL INTERRUPTER APD900 GaP photodiode APD apd500 uv phototransistor led 905 660
    Contextual Info: Optical Switch Series Transmissive and Reflective Photo-interrupters Photo-interrupters are used to detect object passage and proximity presence, and they are available in two forms: transmissive and reflective. In the transmissive group, the infared LED and phototransistor are


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    os-p200osd100-0aosd100-5tatransmissive optical sensor 3 pin+9photoconductive light sensor yellowled reflective optical sensorapd-300loptical interrupterapd900gap photodiode apdapd500uv phototransistorled 905 660 PDF

    A2V-76

    Abstract: SPOT-9DMI A2V-16 SPOT-2D QD50-0 SPOT-4D A5C38 DLS-20 a2v-16 photodiode array A2V16
    Contextual Info: Duo-Lateral, Super Linear PSD’s Position Sensing Detectors PSD The Super Linear Position Sensors feature state of the art duo-lateral technology to provide a continuous analog output proportional to the displacement of the centroid of a light spot from the center, on the active


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    os-p200osd100-0aosd100-5taa2v-76+9spot-9dmia2v-16spot-2dqd50-0spot-4da5c38dls-20a2v-16 photodiode arraya2v16 PDF

    Selection guide

    Contextual Info: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high


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    kird0005e02selection guide PDF

    ingaas LED

    Abstract: EPITAXX ETX1000T InGaAs quadrant large area quadrant photodiode satellite l300 T05 Package ETX25B InGaAs Epitaxx ETX505Q
    Contextual Info: EPITAXX INC 5QE D • 33b04Qb OGQOlBb T H E P X 7^//^// Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,


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    33b040bedl1300rfcetx75ceretx100t+16etx100tletx300tetx300ceredl1300cdetx1300tetx1550tingaas ledepitaxxetx1000tingaas quadrantlarge area quadrant photodiodesatellite l300t05 packageetx25bingaas epitaxxetx505q PDF

    EPITAXX

    Abstract: ETX505Q large area quadrant photodiode ETX100TL-ST ingaas LED epitaxx quadrant ETX1000T InGaAs Epitaxx linear T05 Package ETX300
    Contextual Info: EPITAXX INC EHE D 33bG40b QGGGQbB =1 r -^ - o i Telecommunications: The Local Loop EPITAXX has been a pioneer in developing packaging which supports high volume production while reducing component costs. EPITAXX receptacled photodiodes, laser diodes, and LEDs offer high reliability,


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    33bg40bedl1300rfcr1300etx75fj-slr+13etx75fc-45db-55dbepitaxxetx505qlarge area quadrant photodiodeetx100tl-stingaas ledepitaxx quadrantetx1000tingaas epitaxx lineart05 packageetx300 PDF

    epitaxx

    Abstract: InGaAs Epitaxx linear ETX1300RST ETX1300FC
    Contextual Info: EP I T A X X INC 50E D • 33b040b DGGGIBb T H E P X 7=VAy/ Telecommunications: The Local Loop E P IT A X X has been a p io n eer in developing packaging w hich supports high volum e production while reducing com ponent costs. E P IT A X X receptacled photodiodes, laser diodes, a n d L E D s offer high reliability,


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    33b040bnu00tetx300ceredl1300cd+6etx1300tetx1550tepitaxxingaas epitaxx linearetx1300rstetx1300fc PDF

    Selection guide

    Abstract: United Detector Technology PSD
    Contextual Info: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable


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    kacc0001e02selection guideunited detector technology psd PDF

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


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    photo diode tfk s 186 ptfms 4300ir diodes tfk s 186 ptfk bpw 41 n diode+6tfmt 4300tfmt 4300 ir detectorir diode tfk 186tfms 4300 nmobile receptor tfm 5380tfk s 186 p PDF

    130RF

    Contextual Info: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high


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    opa381opa2381sbos313b18mhz+3250khz10nv/hz130rf PDF