DARK Search Results

thermistor 054

Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max

TCD1300D

Contextual Info: TOSHIBA TCD1300D TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1 3 0 0 D The TCD1300D is a high sensitive and low dark current 3648-elements linear image sensor. The sensor can be used for facsimile, imagescanner and OCR. The signal pre­ processing circuit which is composed of Sample and Hold

TCD1200D

Abstract: TCD1200 TCD-12
Contextual Info: TCD1200D TENTATIVE The TCD1200D is a high sensitive and low dark current 2160 elements image sensor. The sensor can be used for facsimile, imagescanner and OCR, The device contains a row of 2160 photodiodes, which provide a 8 lines/mm (200 DPI) resolution

TC74HC04P

Abstract: TCD141C TCD141 2SC1815
Contextual Info: TCD141 ARC TENTATIVE TCD141C is a high sensitive and low dark current 5000-element image sensor. The sensor can be used for Facsimile. Imagescanner and OCR. The device contain a row of 5000 potodiodes, which provide a 16 lines/mm (400 DPI) across a A3 size paper.

TCD1702C

Abstract: ccd linear toshiba
Contextual Info: TO SHIBA _ TCD1702C TENTATIVE TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1702C The TCD1702C is a high sensitive and low dark current 7500 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and

prtr5v0u6s

Abstract: csp1040 TSSOP20 FOOTPRINT ip4065cx11 smd transistor GY sot89 IP4065CX11/LF BV 9y transistor smd IP4058CX8/LF IP4280CZ10 smd transistor GY
Contextual Info: Dark Green − NXP‘s transfer to halogen-free products Why Dark Green? We as NXP are deeply committed to developing eco-friendly products and integrating environmental safety aspects in all manufacturing processes. For our packaging technology this meant a shift to lead-free and halogen-free “Dark Green”, years

E113898

Abstract: LTV-725F LTV-725FM LTV-725FS LTV-725FS-TA1 725f
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High collector-emitter voltage VCEO : 300V * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current

E113898

Abstract: LTV-724F LTV-724FM LTV-724FS R9653630
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High isolation voltage between input and output * High input current IF : MAX. 150 mA * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio ( CTR : 20% ~ 80% at IF = 100mA, VCE = 2V )

IMD2

Abstract: NDL5481PD NDL5481P1D NDL5481P2 NDL5481P2C NDL5481P2D NDL5481PC NDL5481P NDL5481P1 NDL5481P1C
Contextual Info: 1300 nm OPTICAL ANALOG CATV SYSTEM φ80 µm InGaAs PIN PHOTO DIODE WITH SMF NDL5481P SERIES FEATURES DESCRIPTION • SMALL DARK CURRENT: ID = 0.1 nA The NDL5481P Series is an InGaAs PIN photo diode module with single mode fiber. It is designed for analog transmission

Contextual Info: DATE BY REVISIONS A P P ’D X3N01IS f- NO. 0.200 3NI ANODE TRACKS 32 PLCS OPTOELECTRONIC CHARACTERISTICS (T=25°C) 3.19 Short Circuit Current 500 FC* ÏSC 0.6 mA Open Circuit Voltage 500 FC* V0C 0.45 V Reverse Dark Current -5.0 V 0.5 pk 20. V 0.4 nF EIGHT ELEMENT

Contextual Info: REV 1 0 E S C R 1 P T IO N N5L 3510/2 RESISTANCE @ 2 FTC I 7•S E P •92 ♦3 MIN. TYP. MAX. UNITS 4. 35 6.5 8.64 KOHMS RESISTANCE OHMS DARK RESISTANCE 5 SEC DARK PK SPECTRAL RESPONSE 43 nm VOLTAGE RATING 100 VOLTS «1 PWR DISSIPATION 125 mw *2 +75 “C

G150

Abstract: OD-8451N OD-S524
Contextual Info: SMT-InGaAs PIN MODULE OD-8451N FEATURES OUTLINE DIMENSIONS Units in mm • SURFACE MOUNTABLE BY I.R. REFLOW SOLDER OD-8451N • SMALL SIZE FLAT CERAMIC PACKAGE: 7.6 x 12.7 x 3 mm 12.7±0.2 7.62±0.2 9.62 • SMALL DARK CURRENT: ID = 0.1 nA • WIDE OPERATING TEMPERATURE RANGE:

ICX024BL

Abstract: icx024 SUN POSITION SENSOR CM500S ICX083AL
Contextual Info: ICX083AL Diagonal 11mm Type 2/3 CCD Image Sensor for CCIR Black-and-White Video Cameras Description The ICX083AL is an interline CCD solid-state image sensor suitable for CCIR black-and-white video cameras with a diagonal 11mm (Type 2/3) system. High sensitivity and low dark current are achieved

Contextual Info: I DESCRIPTION R EV 4.45 -&» \ APPVL 0/. 3.94 . 165 -e S N S L - 19M53B ö - - . 14 0 3.81 \ 3 . 30 : t MIN. . 0 5 5 I 1 .78 \ 1.14) RESISTANCE 0 10 LUX TYP. MAX. I8K 6K OHMS RESISTANCE 1 . 5 I— I 3 8 . I ) NOM . 100 U N ITS OHMS DARK RESISTANCE 5 SEC DARK

Contextual Info: LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only FEATURES * HIGH PHOTO SENSITIVITY * SUITABLE FOR INFRARED RADIATION * LOW JUNCTION CAPACITANCE REV.B JUL 2012 * HIGH CUT-OFF FREQUENCY * FAST SWITCHING TIME * THE LTR-526AB IS A SPECIAL DARK BLUE PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT

SMD ic 814 8pin

Abstract: LTV-814M LTV824 PC 814 photocoupler ltv844 LTV844S SMD ic 814 4pin 8pin ic 814 844s LTV814M-V
Contextual Info: AC Input Type Photocoupler LTV-814 Series AC input response High input-output isolation voltage: VISO : 5,000Vrms Low collector dark current (ICEO : MAX. 10-7A at VCE=20V) Current transfer ratio (CTR : MIN. 20% at IF= 1mA, VCE=5V) Compact dual-in-line package

quad photodiode

Abstract: Photodiode
Contextual Info: T DATE NO. REVISIO N S 1 BY APP’D OPTOELECTRONIC CHARACTERISTICS ( T = 25 °C PARAMETER TEST CONDITION Peak Responsivity Spectral Range = 900 nm 0.05 A/W SYMBOL TYPICAL UNIT Rp 0.5 A/W A 0.4-1.1 Response Uniformity ±5 % Dark Current -5.0 V XD 1.0 nA

VCSEL die bonding

Abstract: SATURN PY-CM11
Contextual Info: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.

transistor SMD p05

Abstract: 1981-R TRANSISTOR SMD 2X y 127 D TRANSISTOR 476 16q CP QUICK CONNECT L-398 LDA100 LDA101 LDA110
Contextual Info: I Solid State Current Sensors f H • I Engineering Specifications LDA100 LDA110 LDA101 LDA111 s l LDA200 LDA201 LDA210 LDA211 Output Characteristics Collector Current mA Typical Capacitance (pF) (Ve.= 1 0 V ;f = 1MHz) Collector Dark Current (nA) (Ve. = SV; lF= 0mA)

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * Directly connectable to TTL * High collector-emitter voltage VCEO = 70V * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * High input-output isolation voltage ( Viso = 5,000Vrms )

LTR516AB

Abstract: LTR516
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES * HIGH PHOTO SENSITIVITY * SUITABLE FOR INFRARED RADIATION * LOW JUNCTION CAPACITANCE REV.C JUL 2012 * HIGH CUT-OFF FREQUENCY * FAST SWITCHING TIME * THE LTR-516AB IS A SPECIAL DARK BLUE PLASTIC PACKAGE THAT CUT THE VISIBLE LIGHT

Contextual Info: InGaAs PIN Photodiode R-11-XXX-G-A B Features • InGaAs/InP PIN Photodiode • High Responsivity @1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85ºC operating temperature • Hermetically sealed 3-pin metal case • Active diameter is 40, 55, 75,100 or 300 µm

TSL1301

Contextual Info: TSL1301 102 x 1 LINEAR SENSOR ARRAY WITH HOLD SOES031A – NOVEMBER 1996 – REVISED MAY 1997 D D D D D 102 × 1 Sensor-Element Organization 300 Dots-Per-Inch DPI Sensor Pitch High Sensitivity Output Referenced to Ground Excellent High-Temperature Dark Signal

Contextual Info: S IE M E N S Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current SFH 212 Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im