QS13 Search Results

Memories

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

str - z2156

Abstract: nforce4 ultra nForce4 sli CLEVO nvidia nforce4 TPS2231 rqa130n03 nforce4 subwoofer preamp diagram 6600m
Contextual Info: Preface Notebook Computer M590K Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

SL3145C

Abstract: SP94308C BZX79C3V0 SN74123N SP94308 CAPACITOR JL 100n 725GS13
Contextual Info: Z A R L IN K Obsolescence Notice SEMICONDUCTOR This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete products/

VL393T5663

Abstract: k0215 128MX8 240-PIN DDR2-667 DDR2-800 PC2-3200 PC2-5300 PC2-6400
Contextual Info: Product Specifications PART NO: REV: 1.4 VL393T5663F-E7/E6/D5/CC General Information 2GB 256Mx72 DDR2 ULP ECC REGISTERED DIMM 240-PIN Description: The VL393T5663F is a 256M X 72 DDR2 SDRAM high density DIMM. This memory module consists of eighteen CMOS 128MX8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, two 25-bit Registered

k0215

Abstract: 128MX8 PC2-5300 PC2-6400 QS257 d99d samsung pc2-6400 A9207 QS13
Contextual Info: Product Specifications PART NO: REV: 1.1 VL393T5663E-F7/E7/E6 General Information 2GB 256Mx72 DDR2 VLP REGISTERED ECC 240 PIN DIMM Description The VL393T5663E is 256M X 72 DDR2 SDRAM high density DIMM. This memory module consists of eighteen CMOS 128MX8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, two 25-bit Registered

sp5051

Abstract: SP5050 QS13
Contextual Info: PLESSEY S EMI CONDUCTORS -^E APLESSEY w Sem iconductors 7E20S13 • 00CnS4b . T -S O -C H SP5050/1 1 .8 /2 G H Z SINGLE CHIP FREQUENCY SYNTHESISER T he SP5050/1, used w ith a voltage controlled oscillator, form s a com plete phase locked loop system. The circuit

HYMP125R72MP4-E3

Abstract: HYMP512R72P4-E3 dm 533 DDR2-400 DDR2-533 BA 758
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2

Contextual Info: L O O iO LSH32 32-bit Cascadable Barrel Shifter D E V IC E S IN C O R P O R A T E D FEATURES □ 32-bit Input, 32-bit Output Multi­ plexed to 16 Lines □ Full 0-31 Position Barrel Shift Capability □ Integral Priority Encoder for 32-bit Floating Point Normalization

Contextual Info: Product Specifications PART NO: REV: 1.4 VL393T5663F-E7/E6/D5/CC General Information 2GB 256Mx72 DDR2 ULP ECC REGISTERED DIMM 240-PIN Description: The VL393T5663F is a 256M X 72 DDR2 SDRAM high density DIMM. This memory module consists of eighteen CMOS 128MX8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, two 25-bit Registered

E1 3005-2

Abstract: DDR3 DIMM 240 pinout PC3-10600 k193d
Contextual Info: Product Specifications PART NO: REV: 1.0 VL33B5160A-K9S/F8S/E7S General Information 4GB 512MX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B5160A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirtysix CMOS 256Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

Contextual Info: Product Specifications PART NO: REV: 1.0 VL33B5160A-K9S/F8S/E7S General Information 4GB 512MX72 DDR3 SDRAM ECC 240 PIN RDIMM Description: The VL33B5160A is a 512Mx72 DDR3 SDRAM high density RDIMM. This memory module consists of thirtysix CMOS 256Mx4 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered buffer/

Memories

Abstract: UT8R512K8
Contextual Info: Standard Products UT8R128K32 128K x 32 SRAM Data Sheet March 2009 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 15ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 128K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state

mx 362-0

Abstract: HYMP125
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb version C This Hynix Registered Dual In-Line Memory Module DIMM series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb version C based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width

Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb 1st ver. based Registered DDR2

Memories

Abstract: UT8CR512K32
Contextual Info: Standard Products UT8CR512K32 16 Megabit SRAM Data Sheet March 2009 www.aeroflex.com/Memories INTRODUCTION FEATURES ‰ 17ns maximum access time ‰ Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs ‰ CMOS compatible inputs and output levels, three-state

Contextual Info: Standard Products UT9Q512E 512K x 8 RadTol SRAM Data Sheet September, 2008 INTRODUCTION The UT9Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an

Contextual Info: Product Specifications PART NO: REV: VL393T5663-D5/CC 1.1 General Information 2GB 256Mx72 DDR2 SDRAM REGISTERED ECC 240 PIN DIMM Description: The VL393T5663 is a 256M X 72 DDR2 SDRAM high density DIMM. This memory module consists of eighteen CMOS 128MX8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, a zero delay PLL

Contextual Info: Product Specifications PART NO: REV: 1.1 VL393T5663E-F7/E7/E6 General Information 2GB 256Mx72 DDR2 VLP REGISTERED ECC 240 PIN DIMM Description The VL393T5663E is 256M X 72 DDR2 SDRAM high density DIMM. This memory module consists of eighteen CMOS 128MX8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, two 25-bit Registered

Contextual Info: Standard Products UT8Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT8Q512K32E RadTolerant product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs

Contextual Info: Standard Products UT8ER1M39 40Megabit SRAM MCM UT8ER2M39 80Megabit SRAM MCM UT8ER4M39 160Megabit SRAM MCM Advanced Data Sheet December 19, 2008 www.aeroflex.com/memories FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 1M, 2M, or 4M x

k0215

Abstract: 128MX8 240-PIN PC2-5300 PC2-6400 vl393t5663a-e7
Contextual Info: Product Specifications PART NO: REV: 1.0 VL393T5663A-E7/E6 General Information 2GB 256Mx72 DDR2 REGISTERED ECC 240 PIN DIMM Description: The VL393T5663A is a 256Mx72 DDR2 SDRAM high density DIMM. This memory module consists of eighteen CMOS 128MX8 bit with 8 banks DDR2 Synchronous DRAMs in BGA packages, two 25-bit Registered buffers,

Contextual Info: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs

Contextual Info: Standard Products UT9Q512K32E 16 Megabit RadTolerant SRAM MCM Data Sheet June 28, 2011 INTRODUCTION The UT9Q512K32E RadTol product is a high-performance 2M byte 16Mbit CMOS static RAM multi-chip module (MCM), organized as four individual 524,288 x 8 bit SRAMs with a

Contextual Info: Standard Products UT8Q512E 512K x 8 RadTol SRAM Data Sheet November 11, 2008 INTRODUCTION The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an