QEB363 Search Results

QEB363GR

Abstract: QEB 123
Contextual Info: T-3/4, 2mm DIODE Ordering Information To order QEB or QSB subminiature products on tape and reel include the appropriate standard product part number and suffix code to specify the lead form and packaging method. QEB363GR Packaging Code Lead Form Code Standard Product Part Number

QEB363

Contextual Info: QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)

QEB363

Contextual Info: QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)

PLCC2 diode

Abstract: QEB363 QEB373 QEB421 QEB441
Contextual Info: Optoelectronics Surface Mount Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEB363 8 – 1.7 100 24 940 QEB373 16 – 1.9 100 24 880 IR @ 5 V VR

QEB363

Abstract: QSB363
Contextual Info: SUBMINIATURE PLASTIC INFRARED EMITTING DIODE QEB363 PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .118 (3.0) .102 (2.6) .059 (1.5) .051 (1.3) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)

QEB363

Abstract: QSB363
Contextual Info: QEB363 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications)

024T1

Contextual Info: OPTOELECTRONICS SUBMINIATURE EMITTERS AND PHOTOSENSORS P a rt N um ber E m itte r s T -3 /4 087 i2.2l 071 il.S l I 7 0. MIN j rJ 024 1 ¿1 ,0i6 1 41 ! IB 3 O' 102 :2 6. : QEB363 t j oa.3 tiO'Ji 1 r \ n 1 , \ j ±12° 8 — mW/sr 1.6/20 100/5 1,3 16 —

QEB363

Abstract: QSB363
Contextual Info: QEB363 Subminiature Plastic Infrared Emitting Diode tm Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs

QEB363

Contextual Info: QEB363 Subminiature Plastic Infrared Emitting Diode tm Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs

Infrared Phototransistor

Abstract: QSB363 QEB363 QEB373
Contextual Info: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)

7402 ic configuration

Abstract: QSB363
Contextual Info: QSB363 Subminiature Plastic Silicon Infrared Phototransistor • Daylight Filter ■ Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package

Infrared Phototransistor

Abstract: phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor QSB363
Contextual Info: SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSB363 PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21)

Infrared Phototransistor

Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
Contextual Info: QSB363 Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

QEB363

Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

QEB363

Contextual Info: QSB363 SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) SCHEMATIC COLLECTOR FEATURES .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6)

all datasheet phototransistor

Abstract: phototransistor 500-600 nm QEB363 QEB373 QSB363C
Contextual Info: SUBMINIATURE PLASTIC SILICON PHOTOTRANSISTOR QSB363C PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

QEB363

Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°

Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

Contextual Info: Surface Mount Light Emitting Diodes T- 3/4 2 mm Diode Package CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) 0.118 (3.0) 0.102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11)

QEB363

Abstract: QEB373 QSB363C Infrared Phototransistor 01060
Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24°

Contextual Info: EO OPTOELECTRONICS SU BM IN IA TU RE E M IT T E R S AND P H O T O SEN SO R S P a r ! T-3/4 E m i s s i o n N i-m b * — .276 7 0 - - i .071 <1J) ! | (E m it t e » i>3 ^ <2 P o w f i UKÌH •M 1R' ^ R A \ \ Ì X ! {(,* A ¡¡i V 1 - St il >, N ote '21$ n