QEB373 Search Results
QEB373 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| QEB373 | Fairchild Semiconductor | Subminiature Plastic Infrared Emitting Diode | Original | 520.73KB | 5 | ||
| QEB373 | Fairchild Semiconductor | SUBMINIATURE PLASTIC INFRARED EMITTING DIODE | Original | 126.46KB | 4 | ||
| QEB373GR | Fairchild Semiconductor | Subminiature Plastic Infrared Emitting Diode; Package: T-3/4, 2mm Diode; No of Pins: 2; Container: Tape & Reel | Original | 251.72KB | 5 | ||
| QEB373GR | Fairchild Semiconductor | LED IRLED 880NM T/R | Original | 126.45KB | 4 | ||
| QEB373YR | Fairchild Semiconductor | Subminiature Plastic Infrared Emitting Diode; Package: T-3/4, 2mm Diode; No of Pins: 2; Container: Tape & Reel | Original | 251.72KB | 5 | ||
| QEB373YR | Fairchild Semiconductor | LED IRLED 880NM T/R | Original | 126.45KB | 4 | ||
| QEB373ZR | Fairchild Semiconductor | Subminiature Plastic Infrared Emitting Diode; Package: T-3/4, 2mm Diode; No of Pins: 2; Container: Tape & Reel | Original | 251.72KB | 5 | ||
| QEB373ZR | Fairchild Semiconductor | LED IRLED 880NM T/R | Original | 126.45KB | 4 |
QEB373 Price and Stock
onsemi QEB373ZRInfrared Emitter 875nm 16mW/sr Circular Top Mount 2-Pin T-3/4 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QEB373ZR | 4,000 | 4,000 |
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QEB373ZR | Tape & Reel | 3,000 |
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| QEB373ZR | Tape & Reel | 19 Weeks | 5,000 |
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QEB373ZR | 2,860 |
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QEB373ZR | 4,000 | 19 Weeks | 4,000 |
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QEB373ZR | 153 | 1 |
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QEB373ZR | 1,561 |
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| QEB373ZR | 122 |
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QEB373ZR | 19 Weeks | 5,000 |
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QEB373ZR | 20 Weeks | 1,000 |
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QEB373ZR | 21 Weeks | 1,000 |
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QEB373ZR | 890 |
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onsemi QEB373Subminiature Plastic Infrared Emitting Diode. - Bag (Alt: QEB373) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QEB373 | Bag | 5,000 |
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| QEB373 | Bulk | 25 Weeks | 4,000 |
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QEB373 | 474 |
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QEB373 | Bulk | 1,000 |
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QEB373 | Bulk | 2 Weeks | 20 |
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QEB373 | 1,000 |
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QEB373 |
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QEB373 | 27 Weeks | 1,000 |
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QEB373 | 5,900 |
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onsemi QEB373GRInfrared Emitter, 875 nm, 12 ?, T-3/4 (1.8mm), 16 mW/Sr, 800 ns, 800 ns - Tape and Reel (Alt: QEB373GR) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QEB373GR | Tape & Reel | 5,000 |
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| QEB373GR | Tape & Reel | 19 Weeks | 4,000 |
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QEB373GR | 1,017 |
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QEB373GR | Tape & Reel | 2,000 |
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QEB373GR | 1 |
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QEB373GR | 20 Weeks | 1,000 |
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QEB373GR | 21 Weeks | 1,000 |
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QEB373GR | 1,560 |
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QEB373GR |
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onsemi QEB373.ZRLamp, ired,880Nm Peak Wavelength, led-8D; |Onsemi QEB373.ZR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QEB373.ZR | Tape & Reel | 1,000 |
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LED Technology Ltd QEB373ZR1.9 MM, 1 ELEMENT, INFRARED LED, 880 NM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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QEB373ZR | 45 |
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QEB373 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
QEB373
Abstract: QSB363
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Original |
qeb373880nmqsb36300008a | |
QEB373Contextual Info: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs |
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qeb373880nmqsb363 | |
QEB373Contextual Info: QEB373 SUBMINIATURE PLASTIC INFRARED EMITTING DIODE PACKAGE DIMENSIONS CATHODE 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) FEATURES 0.074 (1.9) • T-3/4 (2mm) Surface Mount Package • Tape & Reel Option (See Tape & Reel Specifications) |
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qeb373880nmqsb36300008a | |
PLCC2 diode
Abstract: QEB363 QEB373 QEB421 QEB441
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qeb363qeb373qeb421qeb441+1 | |
QEB373
Abstract: QSB363
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qeb373880nmqsb363 | |
QEB373
Abstract: QSB363
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Original |
qeb373880nmqsb363 | |
QEB373Contextual Info: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 875nm, AlGaAs |
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qeb373875nmqsb363 | |
Infrared Phototransistor
Abstract: QSB363 QEB363 QEB373
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qsb363ds300357infrared phototransistorqeb363+1 | |
7402 ic configuration
Abstract: QSB363
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qsb363qeb363qeb3737402 ic configuration | |
Infrared Phototransistor
Abstract: phototransistor 500-600 nm QEB373 "infrared phototransistor" all datasheet phototransistor QEB363 npn phototransistor QSB363
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qsb363ds300357infrared phototransistorphototransistor 500-600 nm+4 | |
Infrared Phototransistor
Abstract: c 5802 7402 ic configuration QSB363 QEB363 QEB373 IC 7402
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qsb363qeb363qeb373infrared phototransistor+3 | |
QEB363
Abstract: QEB373 QSB363 QSB363C Infrared Phototransistor
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qsb363cqsb363qeb363qeb373+1 | |
QEB363Contextual Info: QSB363 SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS EMITTER 0.276 7.0 MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) SCHEMATIC COLLECTOR FEATURES .059 (1.5) .051 (1.3) .118 (3.0) .102 (2.6) |
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qsb363qeb363qeb37300009a | |
all datasheet phototransistor
Abstract: phototransistor 500-600 nm QEB363 QEB373 QSB363C
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qsb363cds300233all datasheet phototransistorphototransistor 500-600 nm+2 | |
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L14F1 phototransistor datasheet
Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
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qec112qec113qec121qec122+16 | |
QEB363Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor • Tape & Reel Option See Tape & Reel Specifications ■ Lead Form Options: Gullwing, Yoke, Z-Bend Features ■ ■ ■ ■ ■ NPN Silicon Phototransistor T-3/4 (2mm) Surface Mount Package Medium Wide Beam Angle, 24° |
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qsb363cqeb363qeb373qsb363 | |
024T1Contextual Info: OPTOELECTRONICS SUBMINIATURE EMITTERS AND PHOTOSENSORS P a rt N um ber E m itte r s T -3 /4 087 i2.2l 071 il.S l I 7 0. MIN j rJ 024 1 ¿1 ,0i6 1 41 ! IB 3 O' 102 :2 6. : QEB363 t j oa.3 tiO'Ji 1 r \ n 1 , \ j ±12° 8 — mW/sr 1.6/20 100/5 1,3 16 — |
OCR Scan |
qeb363qeb373024t1 | |
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Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24° |
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qsb363cqsb363qeb363qeb373 | |
4n35 optocoupler spice model
Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
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ts-16949iso-140014n35 optocoupler spice modell14f1 phototransistor datasheet+8 | |
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Contextual Info: Surface Mount Light Emitting Diodes T- 3/4 2 mm Diode Package CATHODE 0.276 (7.0) MIN 0.087 (2.2) 0.071 (1.8) 0.024 (0.6) 0.016 (0.4) 0.019 (0.5) 0.012 (0.3) 0.074 (1.9) .059 (1.5) .051 (1.3) 0.118 (3.0) 0.102 (2.6) 0.055 (1.4) 0.008 (0.21) 0.004 (0.11) |
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qeb363qeb373qeb421qeb441 | |
QEB363
Abstract: QEB373 QSB363C Infrared Phototransistor 01060
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qsb363cqeb363qeb373infrared phototransistor+1 | |
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Contextual Info: EO OPTOELECTRONICS SU BM IN IA TU RE E M IT T E R S AND P H O T O SEN SO R S P a r ! T-3/4 E m i s s i o n N i-m b * — .276 7 0 - - i .071 <1J) ! | (E m it t e » i>3 ^ <2 P o w f i UKÌH •M 1R' ^ R A \ \ Ì X ! {(,* A ¡¡i V 1 - St il >, N ote '21$ n |
OCR Scan |
qeb363qeb373 | |
L14F1 phototransistor datasheet
Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
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se-171l14f1 phototransistor datasheetl14f1 ir phototransistorpin configuration of l14f1+7 | |
Optocoupler H22A1
Abstract: how to interface optocoupler with triac a 2631 optocoupler QRE1113 QRD1114 2631 optocoupler Optocoupler with triac rain SENSOR MOC3023 H22A1
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d-82256optocoupler h22a1how to interface optocoupler with triaca 2631 optocoupler+7 | |