QAA 14 Search Results

595B3

Abstract: SR10-0244-02 C42334-A416-C40 V42254-P2266-B640 V42254-P21G1-C9G0 DIN41612 C96 termina Receptacle female press fit C42334 DIN41612 marking
Contextual Info: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing

A103-A12

Contextual Info: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing

L44X

Contextual Info: M O S E L V IT E L IC V53C316516500 3.3 VOLT 4M X 16 EDO PAGE MODE CMOS DYNAMIC RAM V53C316516500 40 50 60 Max. RAS Access Time, tRAc 40 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa ) 20 ns 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)

Contextual Info: 4-WALL MALE CONNECTOR FOR SOLDER DIP MFC- LPM - 2 - 0 2.5 ^ I HWDA~Mf-C~-OQPMI EflZL^'T +i H . L 0.64 D MFC-20RLPM A -r- E - 1 - in <\j - f~ 2 .5 4 4 -t±i— U T MFC-( Part No. CO l i 7 )RLPM ( 1. 8) • qaa&M&a

Contextual Info: M O S E L V IT E L IC V53C16126H H IG H P ER FO R M A N C E 128K X 16 B IT FA ST PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Ì qaa ) 16 ns

Contextual Info: M O S E L V IT E L IC V53C8256H ULTRA-HIGH SPEED, 25 6K x 8 F A S T P A G E M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R ELIM IN A R Y 35 40 45 50 Max. RAS Access Time, tRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Ì qaa ) 18 ns 20 ns

Contextual Info: M O S E L V IT E L IC V53C16129H H IG H P ER FO R M A N C E 128K x 16 B IT ED O PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 40 45 50 60 Max. RAS Access Time, tRAc 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa )

Contextual Info: M O S E L V IT E L IC V53C16128H H IG H P ER FO R M A N C E 128K x 16 EDO PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 30 35 40 45 50 Max. RAS Access Time, tRAc 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (Î qaa )

Contextual Info: M O S E L V IT E L IC V53C16125H H IG H P ER FO R M A N C E 128K X 16 B IT FA ST PAGE M O D E CM O S DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 40 45 50 60 Max. RAS Access Time, tRAc 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa )

ICS840S07I

Abstract: JEDEC MS-026 ABC
Contextual Info: Crystal-to-LVCMOS/LVTTL Frequency Synthesizer ICS840S07I DATA SHEET General Description Features The ICS840S07I is a seven output LVCMOS/LVTTL Frequency Synthesizer accepting crystal or single-ended reference clock inputs. The ICS840S07I uses a 25MHz parallel resonant crystal to

QAA 14

Contextual Info: PRELIMINARY ICS840S07I CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS840S07I is a seven output, Crystal or single ICS ended-to-LVCMOS/LVTTL Frequency Synthesizer HiPerClockS and a member of HiperClocks™ family of high

VG36256161A

Abstract: VG36256401A VG36256801A
Contextual Info: VIS Preliminary VG36256401A VG36256801A VG36256161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 16,777,216 - word x 4 -bit x 4 - bank, 8,388,608 - word x 8 - bit x 4 - bank, or 4,194,304 - word x 16 - bit x 4 - bank. These various organizations

VG36648041BT-7

Abstract: VG36648041CT
Contextual Info: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36128161

Abstract: VG36128161A VG36128401A VG36128801 VG36128801A
Contextual Info: VIS Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

is42s164008

Abstract: 42S8
Contextual Info: IS42S8800/IS42S8800L IS42S16400/IS42S16400L 2 1 M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -7: 133MHz<3-3-3>, -8: 100MHz<2-2-2> • Fully synchronous operation referenced to clock

Contextual Info: IC42S16160 Document Title 4M x 16Bit x 4 Banks 256-MBIT SDRAM Revision History Revision No History Draft Date Remark 0A Initial Draft September 05,2003 Preliminary The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

dynamic ram binary cell VG36128801BT

Abstract: VG36128161BT VG36128401BT VG36128801 VG36128801BT 1Bt 68
Contextual Info: VIS VG36128401BT / VG36128801BT / VG36128161BT CMOS Synchronous Dynamic RAM Description The VG36128401B, VG36128801B and VG3664128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x

IC42S16400-7TG

Abstract: t16 r IC42S16400-7T IC42S16400-7BG
Contextual Info: IC42S16400 Document Title 1M x 16Bit x 4 Banks 64-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B 0C Initial Draft Revise DC OPERATING CONDITIONS 1. add -6ns speed grade 2. obsolete 8Mx8 configuration 3. obsolete Low power version 4. obsolete -8ns speed grade

VG36641641DT

Abstract: VG36648041DT 4MX16 VG36644041DT
Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

VG36641641

Abstract: VG36641641DT VG36644041DT VG36648041DT
Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

VG36128161

Abstract: VG36128161A VG36128401A VG36128801 VG36128801A
Contextual Info: VIS Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations

integrated circuit manual

Abstract: IC42S16400A
Contextual Info: IC42S16400A Document Title 1M x 16Bit x 4 Banks 64-MBIT SDRAM Revision History Revision No History Draft Date 0A Initial Draft February 19,2004 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS