QAA 14 Search Results

A103-A12

Contextual Info: 8 95 -Q.4 — 0.1 D — 0.1 C 85 -0.2 P/N without o V42254- TYCO S S -0.4 - 0.1 D - 0.1 C + old 10 11 12 14 15 16 Row a 59,76 -0.4 - 0.1 D - 0.1 C 29,02 -0.2 >o O P/N _ XXX+-XXXX+ LO LO x-xxxxxxx-x QAAÀÀ x-xxxxxxx-x 03 A1 2,1 m jH TT B Manufacturing

L44X

Contextual Info: M O S E L V IT E L IC V53C316516500 3.3 VOLT 4M X 16 EDO PAGE MODE CMOS DYNAMIC RAM V53C316516500 40 50 60 Max. RAS Access Time, tRAc 40 ns 50 ns 60 ns Max. Column Address Access Time, (Ì qaa ) 20 ns 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC)

Contextual Info: 4-WALL MALE CONNECTOR FOR SOLDER DIP MFC- LPM - 2 - 0 2.5 ^ I HWDA~Mf-C~-OQPMI EflZL^'T +i H . L 0.64 D MFC-20RLPM A -r- E - 1 - in <\j - f~ 2 .5 4 4 -t±i— U T MFC-( Part No. CO l i 7 )RLPM ( 1. 8) • qaa&M&a

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

is42s164008

Abstract: 42S8
Contextual Info: IS42S8800/IS42S8800L IS42S16400/IS42S16400L 2 1 M Words x 8(16) Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES DESCRIPTION • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -7: 133MHz<3-3-3>, -8: 100MHz<2-2-2> • Fully synchronous operation referenced to clock

Contextual Info: IC42S16160 Document Title 4M x 16Bit x 4 Banks 256-MBIT SDRAM Revision History Revision No History Draft Date Remark 0A Initial Draft September 05,2003 Preliminary The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

IC42S16400-7TG

Abstract: t16 r IC42S16400-7T IC42S16400-7BG
Contextual Info: IC42S16400 Document Title 1M x 16Bit x 4 Banks 64-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B 0C Initial Draft Revise DC OPERATING CONDITIONS 1. add -6ns speed grade 2. obsolete 8Mx8 configuration 3. obsolete Low power version 4. obsolete -8ns speed grade

VG36641641DT

Abstract: VG36648041DT 4MX16 VG36644041DT
Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

VG36641641

Abstract: VG36641641DT VG36644041DT VG36648041DT
Contextual Info: VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM Description The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x

VG36128161

Abstract: VG36128161A VG36128401A VG36128801 VG36128801A
Contextual Info: VIS Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS

IC42S16800-7T

Contextual Info: IC42S81600/IC42S81600L IC42S16800/IC42S16800L Document Title 4 2 M x 8(16) Bit x 4 Banks (128-MBIT) SDRAM Revision History Revision No History Draft Date 0A 0B Initial Draft Corrected typo on PIN FUNCTIONS and revise DC OPERATING CONDITIONS Append two parameters tDPL ,tDAL;correct tRCD

VG36128161

Abstract: VG36128801
Contextual Info: VIS VG36128401B / VG36128801B / VG36128161B CMOS Synchronous Dynamic RAM Description The VG36128401B, VG36128801B and VG36128161B are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4 and 2,097,152 x 16 x

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

SAA7351

Abstract: idf2 TDA1547 equivalent tda1547
Contextual Info: Preliminary Specification Philips Semiconductors 20-bit input bitstream conversion DAC for digital audio systems SA A7351 FEATURES • Up to 20-bit input • Variety of interface formats Japanese and l2S • Choice of two system clock frequencies • Sampling frequency from 16 kHz

Contextual Info: VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.

dba1

Abstract: VG3617161DT
Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: VG3617801BT-10 VG3617801BT-8H VG3617801BT-8L VG3617801CT
Contextual Info: VIS VG3617801CT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617801CT is CMOS Synchronous Dynamic RAMs organized as 1,048,576-word X 8-bit X 2bank. It is fabricated with an advanced submicron CMOS technology and is designed to operate from a single 3.3V power supply. This is packaged using JEDEC standard pinouts and standard plastic TSOP.

dba1

Contextual Info: VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

rba 016

Abstract: dba1 VG3617161BT
Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: VG3617161ET
Contextual Info: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: VG3617161DT
Contextual Info: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

MS82V16520

Abstract: QFP100-P-1420-0
Contextual Info: FEDS82V16520-04 ¡ Semiconductor MS82V16520 This version: Feb. 2000 Previous version: Jul. 1999 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32

MS82V16520

Abstract: QFP100-P-1420-0
Contextual Info: FEDS82V16520-05 ¡ Semiconductor MS82V16520 This version: Mar. 2001 Previous version: Feb. 2000 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32