Q602 Search Results

BXY23

Abstract: BXY22H BXY22J Capacitance Varactor Diode G Q60223-Y
Contextual Info: BXY 22 G, BXY 22 H, BXY 22 J, BXY 23 Depletion-layer varactor Are capacitance diodes for tuning, switching and modulator applications up into the GHz range. BXY 23 T ype BXY BXY BXY BXY 22 G 22 H 22 J 23 cattiuds O rd e r n u m b e r Q 60223-Y 22-G Q60223-Y 22-H

Contextual Info: Part: Q6025K6 Series: Teccor Alternistor Triac Devices Technology:Triacs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Critical Rate-of-rise of On-state Current di/dt A/µs 100 Critical rate-of-rise of off-state voltage

Contextual Info: Part: Q6025NH6 Series: Teccor Alternistor Triac Devices Technology:Triacs PARAMETERS Package Type Pkg Type Surface Mount Mount Method Mount Surface Mount Critical Rate-of-rise of On-state Current di/dt A/µs 100 Critical rate-of-rise of off-state voltage

STR-S5706

Abstract: STR S5706 IC601 TDA8139 S5706 C413 eu-izv1 IC603 ISS133 L603
Contextual Info: D 610 G B U 4JL R612 1M r C 603 4700p 250V. R 615 0,47 1 /2W D606 R G P 15J C 606 180 400v • C604r-^ 4700p. 250v ' R614 8M2 1W Í F B 608 JVV FB601 1,1 UH1 D 605 EU-IZV1 R603 15 1W R 622: 470K D600 IS S 133-77 Q602 DTA144ES R 620 27 0 K R 604 47K 3W D 604

BFX60

Abstract: Q60206-X60 H7B marking H7B transistor H7B* marking microphone
Contextual Info: SIEMENS BFX 60 NPN Silicon RF Transistor • For broadband amplifiers at collector currents up to 15 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFX 60 BFX 60 Q60206-X60 Pin Configuration 1 2

Transistor BFX 59

Abstract: Transistor BFX 25 BFX59 Transistor BFX 4 bfx 34 transistor marking code 7C transistor BFX59 MARKING 7C RF NPN POWER TRANSISTOR C 10-50 GHZ BFX59F
Contextual Info: SIEMENS NPN Silicon RF Transistor BFX59 BFX 59F • For broadband amplifiers at collector currents up to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code B FX 59 B FX 59F BFX 59 BFX 59F Q60206-X59

Q6025P5

Contextual Info: Part: Q6025P5 Series: Teccor Triac Devices Technology:Triacs PARAMETERS Package Type Pkg Type Quick Connect Mount Method Mount Two Hole Base Critical Rate-of-rise of On-state Current di/dt A/µs 100 Critical rate-of-rise of off-state voltage dv/dt @ 100°C

Contextual Info: Part: Q6025J6 Series: Teccor Alternistor Triac Devices Technology:Triacs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Critical Rate-of-rise of On-state Current di/dt A/µs 100 Critical rate-of-rise of off-state voltage

Q62702-P1641

Contextual Info: Si-Fotodetektoren im hermetisch dichten Metallgehäuse Type R adiant /peg *—950 sensitive nm, Ee= 0 .5 m W /cm 2, ( / c =1 mA, V tt= 5 V ) RL=5011) area BPY62 ^C E O Ui ^•10% mA V nm 0 12 0.5 .2 .5 50 4 2 0 . 1130 - Q60215-Y62 5 Q 60215-Y 1111 0 8 . 1.6

bp 103-2

Abstract: Q62702-P79-S2 bp 103-5 Q62702-P1641
Contextual Info: Silicon Photodetectors Si-Fotodetektoren 2. Fototransistoren 2. Phototransistors 2.4 2.4 im hermetisch dichten Metallgehäuse Type Package deg. mm2 mA V nm US ±8 0.12 0.5 . 2.5 50 420 . 1130 BPY 62-3 0.8 . 1.6 7 Q60215-Y1112 BPY 62-4 1.25 . 2.5 9

Contextual Info: Part: Q6025R6 Series: Teccor Alternistor Triac Devices Technology:Triacs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Critical Rate-of-rise of On-state Current di/dt A/µs 100 Critical rate-of-rise of off-state voltage

Q6025L6

Contextual Info: Part: Q6025L6 Series: Teccor Alternistor Triac Devices Technology:Triacs PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole Critical Rate-of-rise of On-state Current di/dt A/µs 100 Critical rate-of-rise of off-state voltage

Q8016LH6

Abstract: Q8025L6 Thyristor catalog THYRISTOR PRODUCT CATALOG Q6035RH alternistor Q2040 Q4010 Q8025R6 QK040K7
Contextual Info: * es ag k ac L. U. ED Z NI E4 G 39 CO 716 E R #E d te ec l Se P le Fi *TO-220 *TO-218X *TO-218 TO-252 D-Pak TO-251 V-Pak TO-263 D 2 Pak MT2 MT1 G Alternistor Triacs 6 A to 40 A E4 General Description Teccor offers bidirectional alternistors with current ratings from

Q2008F41

Contextual Info: ge a ck L. U. ED Z NI G 39 CO 716 E R #E d te ec l Se Pa s* E2 le Fi TO-92 *TO-220 TO-202 3-lead Compak TO-263 D2Pak TO-252 D-Pak TO-251 V-Pak *TO-3 Fastpak MT2 MT1 G Triacs 0.8 A to 35 A E2 General Description These gated triacs from Teccor Electronics are part of a broad

Bpy 43

Abstract: foto transistor Y1112 GMOY6019 Q60215-Y1112 Q60215-Y1113 Q60215-Y5198 Q60215-Y62
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPY 62 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • Hermetisch dichte Metallbauform TO-18 mit Basisanschluß, geeignet bis 125 °C

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

scr firing METHODS

Abstract: Regulated Power Supply Schematic Diagram scr firing circuit for dc servo driver dc ammeter calibration method circuit diagram km 1667 adjustable regulated power supply o to 100 volt 12 volt 25 amp scr power supply scr power control schematic scr firing circuit scr power supplies
Contextual Info: SCR 30 OR EM M O D E L . 30 _ _ S E R . N o _ ELECTRONIC MEASUREMENTS, INC. 405 ESSEX RD.,NEPTUNE,N.J. 07753 201 922-9300 FIVE-YEAR WARRANTY Electronic Measurements, Inc. warrants this equipment manufactured by us and sold by us or our authorized agents to a manufacturer or end user to be free from de­

atx 400 power supply schematic

Abstract: ATX MOTHERBOARD schematic atx schematic l200 regulator P-channel MOSFET Q400 C207-209 atx 400 power supply atx power supply schematic s4 vishay understanding power mosfet intersil
Contextual Info: Embedded ACPI Compliant DDR Power Generation Using the ISL6548 and ISL6506 Application Note July 17, 2006 AN1264.0 Author: Douglas Mattingly Introduction Recommended Test Equipment The ISL6548, in conjunction with the ISL6506, provides a complete ACPI compliant power solution for computer

Transistor BSX 62-16

Contextual Info: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3

TRIAC zo 607 MA

Abstract: ZO 607 TRIAC Westinghouse SCR handbook tl-130 transformer BRX49 equivalent 800w class d circuit diagram schematics triac MAC 97 AB triac MAC 97 A6 ZO 103 TRIAC 1N5760
Contextual Info: DL137/D Rev. 7, May-2000 Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers ON Semiconductor Thyristor Device Data TRIACs, SCRs, Surge Suppressors, and Triggers DL137/D Rev. 7, May–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’

bpy 62-4

Abstract: Q60215-Y1111 foto transistor Y1112 Q60215-Y1112 Q60215-Y1113 Q60215-Y62 Q62702-P1113 Q60215Y1113 BPY62
Contextual Info: BPY 62 BPY 62 fmof6019 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im ● Especially suitable for applications from

PHOTOVOLTAIC CELL

Abstract: Q60215-Y66 BPY47p
Contextual Info: BPY 47 P BPY 47 P fso06633 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1060 nm ● Kathode = Chipunterseite