Q014 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 KMM5361000A/AG Q014Sh4 SfiS « S M G K DRAM MODULES 1 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 5361000A is a 1M bitsX36 Dynamic RAM high density memory module. The Samsung KM M 5361000A consist of eight CMOS 1 M X 4 bit

J200V

Abstract: C67078-A1016-A2 V103
Contextual Info: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 88D 14702 " d r- 3 ^ - // BUZ63 SIEMENS AKTIENGESELLSCHAF _ N-Channel Main ratings - 400 V Draln-source voltage K>a = 5,9 A Continuous drain current 4 Draln-source on-reslstance ^OS «l = 1.0Î2 Description Case

IC 4078

Abstract: 4078B
Contextual Info: S G S-THOMSON 07C D I 7 ^ 2 3 7 C O S /M O S Î9 M IN T E G R A T E D :ÿ k C IR C U IT 7929225 Q014fl7b D I ^1C 0 8 8 9 0 S G S SEMICONDUCTOR CORP *• hcc/hcf w ts i . ,J Ü * p < /^ .û 9 -ô 5 8-INPUT NOR/OR GATE • • • • • • MEDIUM-SPEED OPERATION tpHL., t PLH= 75 ns TYP. A T V DD= 10V

4078B

Abstract: 4078BE
Contextual Info: C O S /M O S G S-THOMSON 07C D I 7 ^ 2 3 7 Q014fl7b D I S Î 9 M *• IN T E G R A T E D :ÿ h c c /h c f w t s k C IR C U IT . ^1C 7929225 S G S SEM ICONDUCTOR 08890 i ,J Ü * p < / ^ .û 9 -ô 5 CORP 8-INPUT NOR/OR GATE • • • • • • M E D IU M -S P E E D O P E R A T IO N tpHL., tPL H = 75 ns TYP. A T V D D = 10V

asssb

Contextual Info: m ÖÖD D ö23SbOS Q0147G2 b « S I E 6 8 8D 14702 □ r -3 < 7 -// SIEMENS AKTIENGESELLSCHAF _ Main ratings Draln-source voltage Continuous drain current Draln-source on-reslstance N-Channel - 400 V K>a = 5,9 A 4 ^0S «l = 1,0 f i Qo- Description

RCA-CA3127

Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
Contextual Info: G E SOLID STATE 01 3>e 1 3&7SQB1 Q014b43 T T ' 7 rLM 3 ‘'2S' IB _ W Arrays CA3127 High-Frequency N-P-N Transistor Array For Low -Pow er A pp lications at Frequencies up to 500 MHz

bly89a

Abstract: Transistor bly89a
Contextual Info: N AMER PHILIPS/DISCRETE ObE D 86D 0 1910 • b b S a ^ l Q01414fl 3 D T - i t-u BLY89A JV V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized. Every

Contextual Info: SAMSUNG ELECTRONICS INC bME D • T'ìbMlMa Q0142ß7 G3T PRELIMINARY KM75C04A CMOS FIFO First-in First-out FIFO 4 K x 9 CMOS Memory FEATURES DESCRIPTION • First-in, First-out dual port memory — 4K x 9 organization • Very high speed independent of depth/width

VN1706m

Abstract: VN1706L
Contextual Info: SILICONIX INC 1ÖE D • ÖSS473S Q014CH4 1 ■ VN1706L, VN1706M f X S ilic o n ix J J f incorporated N-Channel Enhancem ent-M ode M OS Transistors T-2-7-Z5' PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS fDS(ON) (V) ( Í1 ) >d (A) PACKAGE VN1706L 170 6 0.22 TO-92

AUTOMATIC ROOM LIGHT CONTROL

Abstract: laser diode 15mw 1550nm ML9701A 25X1 ML9911 ML9911A InGaAs Photodiode 1550nm
Contextual Info: MITSUBISHI LASER DIODES M L9XX1A MITSUBISHI DISCRETE SC 31E D • bsm aas SERIES Q014201 h M M I T S FOR OPTICAL COMMUNICATION TYPE NAME M L9701 A, M L 9911A DESCRIPTION FEATURES Mitsubishi ML9XX1A series are InGaAsP laser diodes emit­ ting light beams around 1550nm wavelength. They lase by

Contextual Info: MITSUBISHI InGaAs PHOTODIODES PD7XX6 MITSUBISHI DISCRETE SC 31E D I S E R IE S Q014E43 □ B M I T 5 F O R O P T IC A L C O M M U N IC A T IO N T - 4 1 -D 7 TYPE NAME DESCRIPTION FEATURES The PD 7X X 6 series are InG aAs photodiodes designed to • • High quantum efficiency

1550nm photo detector

Contextual Info: 1ITSUBISHI DISCRETE SC blE J> m t.aM'lflST Q014fi3b 444 • H I T S FU-310AP APD Module for Long Wavelength Band FU-310AP is detector module containing highlyreliable InGaAs APD (Avalanche photodiode) module for the long wavelength band (1—1.6/m ) and has

MAR 826

Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the

Contextual Info: 16-BIT TRI-PORT BUS EXCHANGER IDT73720/A Integrated Device Technology, Inc* FEATURES: DESCRIPTION: • High-speed 16-bit bus exchange for interbus com m unica­ tion in the following environments: — Multi-way interleaving memory — Multiplexed address and data busses

AN5437

Abstract: amplification 111 AN5437K
Contextual Info: Panasonic ICs fo r TV A N 5437K Color TV Deflection Signal Processing 1C • Overview The A N 5437K is an integrated circuit designed for color T V deflection signal processing circuit. It can operate with 12V pow er supply and is suitable for various types of

panasonic ccd dsp

Abstract: AN2035FAQ
Contextual Info: Panasonic ICs for Video Camera AN2035FAQ CDS A/D pre-processor 1C for digital CCD camera • Overview The AN2035FAQ is a CDS and A/D pre-processing 1C for digital CCD camera. ■ Features • • • • CDS part : 6-dB and 9-dB amplifiers AGC part : Gain control amplifier —4 to 20dB

J0350

Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM

Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP93CS32 Low Voltage / Low Power CMOS 16-bit MICROCONTROLLERS TMP93CS32F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CS32 is high-speed, advanced 16-bit m icrocontroller developed for controlling m edium to large-scale equipm ent.

circuit diagrams retu 3.02

Contextual Info: BURR— BROUN CORP H E D I il731Bb5 T □01437ñ - S I iz . B U R R -B R O W N I M ñ DAC811 S A V A IL A B L E IN D IE FO R M Iti Microprocessor-Compatible 12-BIT DIGITAL-TO-ANALOG CO N VERTER FEATURES • SINGLE INTEGRATED CIRCUIT CHIP • MICROCOMPUTER INTERFACE: OOUBLE-BUFFERED

CXA2053Q

Abstract: SFH- SONY
Contextual Info: SONY CXA2053Q US Audio Multiplexing Decoder Description The CXA2053Q is an 1C designed as a decoder for th e Z enith T V M u lti-c h a n n e l System and also corresponds with |2C BUS. Functions include stereo dem odulation, S A P S e p a ra te Audio Program

Contextual Info: PIC14000 M ic r o c h ip 28-Pin Programmable Mixed Signal Controller PACKAGE TYPES FEATURES High-Performance RISC-like CPU core PDIP, SOIC, SSOP, Windowed CERDIP • Based on PIC16C74 microcontroller • Only 35 single word instructions to learn • All single cycle instructions except for program

Contextual Info: _ r r w TECHNOLOGY m LTC1069-1 Low Power, 8th O rder Progressive Elliptic, Lowpass Filter FCOTUftCS • 8th Order Elliptic Filter in SO-8 Package ■ Operates from Single 3.3V to ±5V Power Supplies * —20dB at 1.2ffljT0FF ■ —52dB at 1 -4 fc L T 0 F F