Q005 Search Results

UM82C50

Abstract: UM82C450
Contextual Info: UNICORN MICROELECTRONICS 2^»E D • =1270705 []Q005Li3 T UM 82C 450 Asynchronous Communication Element ACE P R E L IM IN A R Y Features ■ F u lly programmable serial-lnterface characteristics ■ Adds or deletes standard asynchronous com m unication — 5-, 6-, 7-, o r 8-bit characters

transistor D 667

Abstract: 500 watt power UPS circuit diagram M5 DIODE transistor 667 transistor D 667 C 1000 watt ups circuit diagram 720 transistor A 720 transistor ups 500 watt diagram CC2406100N
Contextual Info: POIÜEREX IN C B'JE m/HEREX • ? 2 e14b51 Q005024 S * P R X ' -^ ¿ rg -c ? ! • Fast and Super-Fast Recovery Diode Modules Selector Guide The Powerex Fast and Super Fast Recovery Diode Modules are designed to complement

6381D

Contextual Info: bSE » M O S E L - VI T E L I C MOSEL- VITELIC ^3533^1 Q005S37 Ö23 MS76215 & MS76225 512 x 18 & 1024 x 8 PARALLEL SYNCHRONOUS FIFOs Features Description • Full CMOS clocked synchronous FIFOs ■ Read and write clocks can be synchronous or asynchronous ■ Master / Slave devices make depth and width

Contextual Info: LATTICE SEMICONDUCTOR bflE ]> • SBöbTM'i Q005772 MAI BILAT Lattice GAL16VP8 High-Speed E2CMOS PLD Generic Array Logic ■ ■■■■■ FEATURES FUNCTIONAL BLOCK DIAGRAM • HIGH DRIVE E2CMOS GAL® DEVICE — TTL Compatible 64 mA Output Drive — 15 ns Maximum Propagation Delay

ECG1428

Abstract: Phase Control Circuit ECG142
Contextual Info: 17E PHILIPS E C G INC ^53=120 Q0054bâ 4 T—77—27 ECG ECG 1425 VCR Capstan Servo Control Semiconductors Features • Phase control circuit r s ro IIU 'U I Speed control circuit Capstan FG divider ratio change circu it Sam ple hold system speed control U

35fj

Abstract: ECG151 ECG1510 ECG1610
Contextual Info: _ ._ J _ ‘_ J_ PHILIPS E C G INC 17E ECG Se m ico n d u cto rs bb53^2& Q0055E7 S Voltage Level Ind. Dr., 5 Step Output for LED, Linear Scale Top View The ECG151Q is a semiconductor integrated circuit consisting of a circuit designed for use

Contextual Info: niCRO POWER SYSTEMS INC LIE D Q0053T4 MP7623 DIE 03^ • “ F - 51^ 9 - > z _ 12-Bit Multiplying Digital-to-Analog Converter C M O S Die Specifications M Micro Power Systems ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings TA = 25°C Ordering Information

Transistor BFT 96

Abstract: bft96 transistor 3884 transistor BC 176 Telefunken u 237 transistor fet 3884
Contextual Info: TELEFUNKEN ELECTRONIC Ô1C P • fi^SQD^b Q00532Q T r-*/~ BFT 96 iniDJllFWIKEM electronic Creative Technologies Silicon PNP Planar BF Transistor Applications: RF amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain

K3009U

Contextual Info: mm HAMMOND /U4NUE4CTURING,. i l l w Transformers COPPER WOUND — SINGLE PHASE Pri V Sec V 240 x 480 120/240 kVA Mfr No. Wiring Dlag. Mfr. No. Wiring Dlag. Mfr. No. Wiring Diag. 3 5 7.5 10 15t 251 37.5 50 75 100 150 167 250 333 Q003LECF Q005LECF Q007LECF Q010LECF

Contextual Info: 4*ìE T> Sabf l MSb 000E073 174 _ I MMHS MATRA M H S January 1991 Preliminary M 65M748 HI-REL DATA SHEET 256 k x 8 SRAM MODULE FEATURES • HIGH DENSITY 2 MEGABIT SRAM MODULE ASYNCHRONOUS ■ MILITARY ACCESS TIME : 35*/45/55 ns 5 VOLT OPERATION ■ LOW POWER CONSUMPTION

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

Contextual Info: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01

Contextual Info: AT27C040 Features • • • • • • • • • • Fast Read Access Tim e-100 ns Low Power CMOS Operation 100 txA max. Standby 25 mA max. Active at 5 MHz Wide Selection of JEDEC Standard Packages Including OTP 32-Lead 600-mil Cerdip and OTP Plastic DIP, or TSOP

PC MOTHERBOARD CIRCUIT diagram

Abstract: diode c24 06 6D LM386 BLOCK DIAGRAM DESCRIPTION hcm1206 5V power supply using bridge circuit using 7805 2 pin 2.5 3.5 ptt motorola jack diagram LM386 Audio Amplifier computer schematic power supply circuit diagram 4W53 computer motherboard circuit diagram
Contextual Info: Si2493/57/34/15/04 Global ISOmodem-EVB Evaluation Board for the Si2493/57/34/15/04 with a UART Interface Description The global Si2493/57/34/15/04-EVB evaluation board provides the system designer an easy way of evaluating the Si2493/57/34/15/04 ISOmodem . The Si2493/57/

Contextual Info: @ LG Semicon. Co. LTD Description Features The GM 71V S 17800B/BL is the new generation dynamic R A M organized 2,097,152 w ords x 8 bit. G M 71V (S)17800B/BL has realized higher density, higher perform ance and various functions by utilizing a d v a n c e d C M O S p ro c e s s te c h n o lo g y . T he

Contextual Info: AT28HC191/L Features • • • • • • • • • • Fast Access Time - 35 ns Low Power Dissipation 100 |xA Standby Current AT28HC191L 80 mA Active Current E2PROM Technology -100% Reprogrammable Direct Replacement for Bipolar PROMs Reprogrammable 1000 times

d78310

Abstract: D78312 d78p312a d78312a D78310A iPD78312A MANUAL ANDO AF-9704 EPROM PROGRAMMER pD78312 nec 78312 a PD78312A
Contextual Info: D ATA S H E E T MOS INTEGRATED CIRCUIT jüPD78310A A , 78312AIA) 16/8 BIT SINGLE-CHIP M ICROCOM PUTER The^PD78312A(A) is a CMOS 16/8-bit microcomputer. It contains a high-performance 16-bit CPU, enabling highly advanced internal arithmetic/logical operations. Up to 56K bytes of external memory can be added.

Contextual Info: Full Duplex 84C 300A 4-Port Fast Ethernet Controller Technology Incorporated PRELIMINARY _A pril 19, 1996 Features • ■ ■ Low Power CMOS Technology Note: Check for latest Data Sheet revision before starting any designs.

mic 4227

Abstract: RX-2-G CS4248-KL ROA3 ad1848 L0A2 CS4248
Contextual Info: m ^ m m m a a ^ a m CS4248 a a m a a a a a m Semiconductor Corporation Parallel Interface, Multimedia Audio Codec General Description Features [¡¡Jivavè • Integrated parallel interface to ISA and EISA buses The CS4248 is an Mwave audio codec. The CS4248 is a mixed signal integrated circuit that

nec tokin oe 128

Abstract: MS-17171 MCP51M NEC Tokin od 108 c113 pc 100 3p3 nvidia c51mv PC017 MS17171 Athlon Neo X2 CM1616
Contextual Info: 5 4 3 MS-17171 Ver : 2.0 2 Processor 1 DDR2 Sodimm 0 AMD S1 638 pin uFCPGA 638 socket Battery Charger Page 6 DDR2 400 / 533 / 667 MHz Page 31 DDR2 Sodimm 1 Page 2,3,4,5 Battery select Page 6 Page 32 D D 16 X 16 Bit HyperTransport Link DRAM Power Page 33 North Bridge

k117

Abstract: BTS 308 k117 GR smi 5502 RFP 350 90 TSO-C148 prca murata stm stt 128 GR-253-CORE PM5346
Contextual Info: PMC-Sierra, Inc. S ta n d a rd P ro d u c t PMC-950919 I I V I V — P M 5 3 4 8 S /U N I- D U A L ISSUE 4 SATURN USER NETWORK INTERFACE FEA TU R ES • Single chip dual ATM User-Network Interface operating at 155.52 and 51.84 Mbit/s. • Provides essential hardware and software compatibility with industry-standard

philips capacitor 2222 12NC 1997

Abstract: 12NC ordering code philips
Contextual Info: Product specification Philips Components Surface mounted ceramic multilayer capacitors Class 2, Y5V series QUICK REFERENCE DATA FEATURES • Four standard sizes DESCRIPTION VALUE • High capacitance per unit volume Rated voltage • Supplied in blister tape on reel

capacitor MKT Philips

Abstract: c2228 capacitor 0,1 k 250 mkt philips IEC 384-14 II 40 100 21 TT4355 capacitor x2 mkt x2 SI 6822 philips HQ 250 mkt 0.047 k capacitor capacitor 0.1 j 100 MKT IEC 384-14 II
Contextual Info: fl- 0 5 - n -o 5 Product specification Philips Components Interference suppression film capacitors MKT/MKT 331 6 MKT/MKT RADIAL POTTED CAPACITORS PITCH 15/22.5/27.5 mm QUICK REFERENCE DATA FEATURES • 15 to 27.5 mm lead pitch DESCRIPTION • Supplied loose in box and taped on

C086

Abstract: f 0472 N-Channel MOSFET
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BSS123 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n l = 6 O H M S 100 V O L T S This TM O S FET is designed fo r h ig h -vo ltag e , h ig h ­