PW 2N 150 Search Results

2n5114

Contextual Info: 2N5114/5115/5116 Vishay Siliconix P-Channel JFETs PRODUCT SUMMARY Part Number v GS off (V) r DS(on) Max (Q ) 'o(otf) Typ (PA) toN Max(ns) 2N5114 5 to 10 75 -10 16 2N5115 3 to 6 100 -10 30 2N5116 1 to 4 150 -10 42 FEATURES BENEFITS APPLICATIONS • Low On-Resistance: 2N 5 1 1 4 <7 5 Q

S7504

Abstract: S7503 S726 PWS-750-6 2N7010 4PIN Transform diode bridge 4pin 2n7012 diode 2U s7502
Contextual Info: B U R R -B R O W N PWS750 ] E Isolated, Unregulated DC/DC CONVERTER COMPONENTS FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • INDUSTRIAL PROCESS CONTROL EQUIPMENT • COMPACT-SURFACE MOUNT • GROUND-LOOP ELIMINATION • MULTICHANNEL OPERATION

2N3252

Abstract: 4201P 2N3253
Contextual Info: TYPES 2N3252, 2N3253 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L-S 7 3 7 4 3 6 . M A R C H 1 9 6 5 - R E V IS E D M A R C H 1973 DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS m echanical d ata ab solu te m axim u m ratin g s a t 2 5 °C fre e -a ir tem p eratu re unless o therw ise noted

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2n4033

Contextual Info: 30E D • 7^237 GQ312D7 fi ■ SGS-THOMSON ~T'37-l5 2N4030-2N4031 2N 4032-2N 4033 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N4030,2N4031, 2N4032, and 2N4033 are si­ licon planar epitaxial PNP transistors in Jedec TO-39 metal case primarily intended for large signal,

2N3012

Abstract: NS2N 2N3012M 2N2894
Contextual Info: TYPES 2N2894, P-N-P SILICON TRANSISTORS B U L L E T I N NO. D L -S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS 0.5 v Max at 100 ma Guaranteed VC f » a t High f T 400 Me Min * m e ch a n ic a l d a ta C ollecto r-Base V o l t a g e . — 12 v

PW 2N

Abstract: 4392
Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH Linear Integrated Systems FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 LOW ON RESISTANCE rDS on ≤ 30Ω FAST SWITCHING tON ≤ 15ns ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated)

PW 2N

Abstract: 2N2894 2n320 2N3209
Contextual Info: 2N2894 2N3209 HIGH-SPEED SATURATED SWITCHES DESCRIPTION The 2N2894, and 2N3209 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case, intended for high speed, low saturation switching applications up to 100 mA. Products approved to CECC 50004-022/023

Contextual Info: 2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 rDS on ≤ 30Ω LOW ON RESISTANCE tON ≤ 15ns FAST SWITCHING ABSOLUTE MAXIMUM RATINGS 2N SERIES 1 PN SERIES SST SERIES SOT-23 TOP VIEW @ 25 °C (unless otherwise stated)

P-Channel JFETs

Abstract: marking 2n sot23 52431 2N/SST5461 SST5461
Contextual Info: Tem ic 2N/SST5460 Series S e m i c o n d u c t o r s P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 Product Summary P a rt N um ber VcS oB <V) V<BR)GSS M in (V ) gfe M in (m S ) l o s s M in (m A ) 2N/SST5460 0.75 to 6 40 1 -1 2N/SST5461 1 to 7.5

2N5196

Abstract: u421s
Contextual Info: 2N5196 SERIES N-Channel JFET Pairs The 2N 5196 S e rie s of m onolithic J F E T p airs C T S iic o n ix in c o r p o ra te d is >G M AX V 9 ft M IN (m S ) (P A ) |Vg S 1"V GS2| M AX <mV) 2N 5196 -50 1 -1 5 5 2N 5197 -5 0 1 -1 5 5 2N 5198 -5 0 1 -1 5 10 2N 5199

2N6678

Abstract: transformerless inverter 2N6676 2N6677 DO820
Contextual Info: Series 2N6676, 2N6677, 2N6678 High Voltage NPN Transistors 15 Amperes • 400 Volts FEA TURES • High Voltage Rating— 400 Volts • Glass Passivation • Superior Resistance to Thermal Fatigue • Industrial and Military Applications APPLICATIONS • Switching Regulators

2N5640 equivalent

Abstract: 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663
Contextual Info: a S ilico n ix . designed for Performance Curves NC See Section 5 BENEFITS »ABSOLUTE M A X IM U M RATINGS 25°C Low Cost Industry Standard Package A utom atic Insertion Package Fast Switching l rise < 5 ns (2N5638) Low Insertion Loss RDS(on) < 30 SI (2N5638)

104 cev

Abstract: 2n3442 H1010 N3442 2n4347
Contextual Info: 2 N 3442, 2 N 4347 NPN Power transistors 2 N 3442 and 2 N 4347 are sing le-diffu sed N P N silico n transistors in a case 3 A 2 DIN 4 1 872 T O -3 . The co llecto r is electrically connected to the case. The transistors are particularly designed for use at high operating voltages in A F output stages, as

4392 ic equivalent

Abstract: PW 2N SST4393 IN4392
Contextual Info: T e m ic 2N/PN/SST4391 Series Siliconix N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 PN4392 PN4393 SST4391 SST4392 SST4393 Product Summary r DS<on M a x £2) lD (oB >#P (pA) toN Typ (n s) - 4 to - 1 0 30 5 4 - 2 to - 5 60 5 4 -0 .5 to —3 100 5 4 P a rt N um ber

PW 2N

Abstract: SST4393 Q3060 marking 2n sot23 2N4392 4392 ic equivalent PW 2N 150 SST4391
Contextual Info: Tem ic 2N/PN/SST4391 Series S e m i c o n d u c l o r s N-Channel JFETs 2N4391 2N4392 2N4393 PN4391 SST4391 PN4392 SST4392 PN4393 SST4393 Product Summary Part Number VGS off (V) r DS(on) Max (Q) iD(off) Typ (pA) to N T V p (n s) 2N/PN/SST4391 - 4 to -10 30

PW 2N

Abstract: marking 2n sot23 2n4393 siliconix Q3060 SST4391 PN4392 equivalent
Contextual Info: 2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY P a rt N u m b e r V û S o ff ( V ) r D S (o n) M a x ( Q ) ItH o ff) T Y P ( P A ) 2N/PN/SST4391 - 4 to -1 0 30 5 4

2n1833

Abstract: 2N720 n719 2N1890 2n871 2N698 2N719 2N1889 2N639
Contextual Info: TYPES 2N698, 2N639. 2N719, 2N719A, 2N720, 2N720A. 7.nm 2N871, 2N1889, 2N1890, 2N1893 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 4 4 2 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

AN691

Abstract: MCP41010 MCP41050 MCP41100 MCP41XXX MCP42010 MCP42050 MCP42100 MCP42XXX
Contextual Info: AN691 Optimizing Digital Potentiometer Circuits to Reduce Absolute and Temperature Variations Author: The two modes that a potentiometer can be configured in are the Rheostat mode and Voltage Divider mode. When used in the Rheostat mode, the wiper terminal

SST5461

Abstract: 2N5460 2n5462 2N5461 SST5460 SST5462 70262
Contextual Info: 2N/SST5460 Series Vishay Siliconix P-Channel JFETs 2N5460 2N5461 2N5462 SST5460 SST5461 SST5462 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) 2N/SST5460 0.75 to 6 2N/SST5461 1 to 7.5 40 1 –1 40 1.5 2N/SST5462 1.8 to 9

2N73A

Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N1420

Abstract: 2N956 2n161 2N1507 2N956 TEXAS INSTRUMENTS 2N731
Contextual Info: TYPES 2N731, 2N956, 2N1420, 2N1S07, N-P-N SILICON TRANSISTORS ¿ U t » ' ? J . U n - B U L L E T IN NO. DL-S 6 9 3 4 7 1 , MAY 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications

2N3467

Abstract: 2N3467 MOTOROLA
Contextual Info: 2N3467* 2N3468* M A XIM U M RATINGS Symbol 2N3467 2N3468 Unit Emitter-Collector Voltage VCEO -4 0 -5 0 Vdc Collector-Base Voltage VCBO -4 0 -5 0 Vdc Emitter-Base Voltage vebo -5 .0 Vdc Collector Current — Continuous ic -1 .0 Ade Total Device Dissipation @ Ta = 25°C

TRAITR

Abstract: 2n34 2N3418 2N3420 TEXAS INSTRUMENTS 2N3419
Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS 30 m < m m HIGH-FREQUENCY MEDIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 ° W H C ^ P 3 m w -I 5 g 1 P1 3 S “ ^ z . « 2 • High-Power Dissipation in TO-5 Package: