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    PTMA180402EL Search Results

    PTMA180402EL Datasheets (5)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTMA180402EL
    Infineon Technologies 1800 MHz to 2000 MHz; Package: PG:H-33265-8; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 1,800.0 - 2,000.0 MHz; P1dB (typ): 40.0 W; Supply Voltage: 28.0 V Original PDF 440.84KB 11
    PTMA180402ELV1
    Infineon Technologies RF Amplifiers, RF/IF and RFID, IC AMP RF LDMOS 40W H-33265-8 Original PDF 12
    PTMA180402ELV1R250
    Infineon Technologies RF Amplifiers, RF/IF and RFID, IC AMP RF LDMOS 40W H33265-8 Original PDF 12
    PTMA180402ELV1R250XTMA1
    Infineon Technologies RF/IF and RFID - RF Amplifiers - IC AMP CDMA 1.8GHZ-2GHZ H33265-8 Original PDF 907.12KB
    PTMA180402ELV1XWSA1
    Infineon Technologies RF/IF and RFID - RF Amplifiers - IC AMP CDMA 1.8GHZ-2GHZ H33265-8 Original PDF 907.12KB

    PTMA180402EL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1800 to 2000 MHz. These devices


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    ptma180402elptma180402fl40-watth-33265-8+1h-34265-8 PDF

    H-33265-8

    Abstract: 600S2 399-1267-2-ND PTMA180402EL ptma180402elv1
    Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all


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    ptma180402elptma180402fl40-watth-33265-8+5h-34265-850-ohm600s2399-1267-2-ndptma180402elv1 PDF

    GS -L 0.1uF Capacitor

    Abstract: PTMA180402FL RO4350 GRM422Y5V106Z050AL PTMA180402EL infineon gold Marking h 498
    Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in


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    ptma180402elptma180402fl40-watth-33265-8+6h-34265-8gs -l 0.1uf capacitorro4350grm422y5v106z050alinfineon goldmarking h 498 PDF

    Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in


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    ptma180402elptma180402fl40-watth-33265-8+2h-34265-850-ohm PDF

    electrolytic capacitor 2200 uf

    Contextual Info: PTMA180402EL PTMA180402FL Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt LDMOS integrated circuits intended for base station applications. They can be used for all typical modulation formats


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    ptma180402elptma180402fl40-watth-33265-8+2h-34265-8electrolytic capacitor 2200 uf PDF

    GRM422Y5V106Z050AL

    Abstract: PTMA180402EL PTMA180402FL RO4350 H-33265-8
    Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifer 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in


    Original
    ptma180402elptma180402fl40-watth-33265-8+4h-34265-850-ohmgrm422y5v106z050alro4350 PDF

    Contextual Info: PTMA180402EL PTMA180402FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 40 W, 1800 – 2000 MHz Description The PTMA180402EL and PTMA180402FL are matched, wideband 40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all


    Original
    ptma180402elptma180402fl40-watth-33265-8+2h-34265-850-ohm PDF

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


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    pg-dso-20pg-rfp-10h-34265-8h-33265-8+15h-30248-2h-36248-2h-33288-2h-31248-2h-37248-2h-34288-2a1807ptfa211801eh-32259-2lt 860ptfa071701glptfa072401fl1800 ldmos1805-1880ptma210452m PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


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    ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF

    PTFA142401EL

    Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


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    ptfa041501eptfa041501fptfa070601epg-dso-20-63+13pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2h-36260-2ptfa142401elptfa070601fptfa071701eptfa071701fptfa072401elptfa072401flptfa080551e PDF

    PTFA041501E

    Abstract: PTFA220121M PTFB241402F PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL
    Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly


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    ptfa041501eptfa041501fptfa070601e725-7452fl+13pg-dso-20-63pg-son-10h-33265-8h-34265-8h-36248-2h-37248-2ptfa220121mptfb241402fptfa070601fptfa071701eptfa071701fptfa072401elptfa072401fl PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


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    bgu7073bgu7072infineon power management selection guide 2011toshiba car audio catalog 2015+6bap50-03 spice modelbb 804 varicap diodemosfet toshiba 2015rf manual 19th editionrf manualblf188 PDF

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


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    ptfa041501eptfa041501fpg-dso-20-63pg-rfp-10+15h-33265-8h-34265-8h-30260-2h-36260-2h-30265-2h-30248-2ptfb182503flptfa08150rf power transistorsptfa081501eptfa092213elptfbptfa211801eptfb182503ptfb192503 PDF