PTF08 Search Results

TSSOP10

Abstract: TSSOP-10 infineon smd smd transistor infineon PTF080101M
Contextual Info: Preliminary PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, PCS Band, 860 – 960 MHz Description The PTF080101M is a 10-watt GOLDMOS FET device intended for EDGE applications in the 860 to 960 MHz band. This LDMOS device operates at 50% efficiency P–1dB .

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

LM7805 smd 8 pin

Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
Contextual Info: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

omron mya-la12

Abstract: omron relay MK2KP omron MK2kP MYA-NA2 MYA-LA12 MK2KP Mk2kp omron RELAY MYA-NA2 mk3p omron omron MK2P
Contextual Info: General-purpose Relays and Power Relays Sockets Relay Type Track Mount Sockets Back Connecting Sockets Solder terminals PCB terminals G2R-1-S P2RF-05 P2RF-05-E P2RF-05-S P2R-05A P2R-05P G2R-2-S P2RF-08 P2RF-08-E P2RF-08-S P2R-08A P2R-08P LY1, LY2 PTF08A-E

PTF08A-E

Abstract: PT08-0
Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 naHenbKM flna npoMbiwneHHbix p e n e c e p u u LY2 K o f l: O nH caH H e PTF08A-E PT08-0 naHe^bKa Ha WHHy DIN naHe^bKa PCB (c BbiBOAawm nc>Ana^Ky) MOHTaWHbie flB a OTBepCTMfl nofl bmht M3, M4

PTF080601

Abstract: PTF080601A PTF080601E PTF080601F 30248
Contextual Info: Developmental PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860–960 MHz Description Features The PTF080601 is a 60–W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

PTF082001E

Abstract: atc 1725 LM7805 smd smd transistor infineon 106T BCP56 PTF082001F 106T capacitor
Contextual Info: PTF082001E PTF082001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 860 – 900 MHz Description The PTF082001E and PTF082001F are 200-watt, internally-matched GOLDMOS FETs intended for CDMA and CDMA 2000 applications in the 860 to 900 MHz band. Thermally-enhanced packaging provides the coolest

Contextual Info: Preliminary PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest

smd transistor marking C14

Abstract: transistor smd marking ds BCP56 LM7805 PTF081301E PTF081301F
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

LM7805 smd 8 pin

Abstract: LM7805 smd smd lm7805 LM7805 M SMD SMD package marking ab l16 JX900 LM7805 05 LM7805 C5 MARKING TRANSISTOR marking us capacitor pf l1
Contextual Info: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

LM7805 smd

Abstract: TRANSISTOR SMD 2X K lm7805 specification transistor smd marking ND BCP56 LM7805 PTF080101S MARKING SMD transistor R11
Contextual Info: PTF080101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 – 960 MHz Description The PTF080101S is a 10-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible.

PTF080101

Abstract: PTF080101S
Contextual Info: Advance Information PTF080101 LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz Description Features The PTF080101 is a 10 W, internally matched GOLDMOS FET intended for EDGE applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

LM7805 smd

Abstract: LM7805 smd 8 pin marking us capacitor pf l1 smd marking f2 TRANSISTOR circuit of lm7805 transistor smd marking ND BCP56 LM7805 PTF080451 PTF080451E
Contextual Info: PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869–960 MHz Description Features The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

LM7805

Abstract: LM7805 smd 8 pin PTF080901 PTF080901E marking us capacitor pf l1 philips smd 1206 resistor SMD 1206 RESISTOR 100 OHMS smd marking f2 smd marking l5 transistor smd marking ND
Contextual Info: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

BCP56

Abstract: LM7805 PTF080601E PTF080601F transistor smd marking NE
Contextual Info: PTF080601E PTF080601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 860 – 960 MHz Description PTF080601E Package 30265 The PTF080601E and PTF080601F are 60-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 860 to 960 MHz band. Thermally-enhanced packaging provides the coolest operation possible. Full gold metallization ensures excellent device lifetime

DD 127 D TRANSISTOR

Abstract: A90W ptf080901e
Contextual Info: PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

Contextual Info: Product Brief PTF080601 GSM/EDGE/CDMA RF Power FET The PTF080601 Performance Optimized for EDGE and CDMA2000 applications, the PTF080601 is one of our new line of 860 MHz to 960 MHz devices. Typical EDGE performance for this device delivers 30 W average and 18 dB gain with

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

MY2N 24VDC, IEC255

Abstract: OMRON LY2 IEC 255 OMRON LY2 iec255 5A, 250VAC Relay relay my4n omron circuit diagram BJ 938 Transistor OMRON LY2 iec255 relay MY2 24VDC, IEC255 BJ 938 Transistor Data relay my2n omron 8 pin MY4N 24VDC, IEC255
Contextual Info: Components Catalogue Contents Contents Welcome 7-8 POWER RELAYS 9 - 156 Technical Information – Power & Signal Relays 9 - 28 AUTOMOTIVE RELAYS 274 - 313 Selection Guide 274 - 277 G8N-1 278 - 282 Selection Guide 29 - 40 G8ND-2 283 - 287 G5B 41 - 44 G8NW 288 - 292

D4SL-N

Abstract: floatless switch diagram TL4019 E3RB
Contextual Info: 2014-2015 Industrial Components Solution Selection Guide Sensing Co n t ro l Co m p o n e n t s S w i t c h i n g Co m p o n e n t s S a fe t y Better machines OMRON Automation and Safety is a leading global supplier of automation systems serving industrial

OMRON LY2 relay

Abstract: LY2 relay OMRON LY4 RELAY OMRON ly3-0 omron relay ly2 OMRON LY3 relay OMRON LY1 relay ly3 24 vdc OMRON LY2 N LY2N 120vac
Contextual Info: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.

PTF08-E

Abstract: PTF14A-E LY2N-CR OMRON LY4 LY2 relay LY3F LY1N LY2ND PTF14A LY2-D
Contextual Info: General-purpose Relay LY A Miniature Power Relay Equipped with arc barrier. Withstand voltage: 2,000 V. RC+Y LR Ordering Information Open Relays Type Standard Contact form Plug-in/solder terminals Plug-in/solder terminals with indicator PCB terminals Upper-mounting

OMRON LY2 relay

Abstract: 3PDT switch PFP-100N2 PT08 PT08QN PT11 PT14 PTF08A-E PTF11A PTF14A-E
Contextual Info: General Purpose Relay LY • Arc barrier equipped. • High dielectric strength 2,000 VAC . • Long dependable service life assured by Ag-Alloy contacts. • Choose models with single or bifurcated contacts, LED indicator, diode surge suppression, push-to-test button, or RC circuit.

OMRON LY2 iec255 relay

Abstract: OMRON LY4 iec255 50a relay socket PT08 PT08QN PT11 PT14 PTF08A PTF08A-E PTF11A
Contextual Info: General-purpose Relay LY A Miniature Power Relay Equipped with arc barrier. Dielectric strength: 2,000 V. Built-in diode models added to the LY Series. Single-pole and double-pole models are applicable to operating coils with ratings of 100/110 VAC, 110/120 VAC, 200/220 VAC, 220/240 VAC, or