PRINC Search Results

MBRM140T1G

Contextual Info: MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces

mbr2506

Abstract: MBR25060V
Contextual Info: MOTOROLA Order this document by MBR25060V/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR25060V SWITCHMODE S ch o ttky Pow er R e c tifie r . . . using the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features:

MBRM110LT1G

Contextual Info: MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced

b2545g

Abstract: B2545 AKA b2545 B2545G diode b2545g aka B2545 M 418B-04 SBRB2545CTG SBRB2545 PPAP MANUAL for automotive industry
Contextual Info: MBRB2545CTG, SBRB2545CTG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the Schottky Barrier principle with a platinum barrier metal. Features • 

Contextual Info: MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high

Contextual Info: ChenYang Technologies GmbH & Co. KG Hall Effect Voltage Sensor CYHVS10-20A CYHVS10-20A is a Hall Effect Voltage sensor, which is based on magnetic compensation principle. This sensor can be used for measuring DC and AC voltage with different wave forms. It has high electric isolation.

Contextual Info: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-P This Hall Effect current sensor is based on the closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects the

Contextual Info: Technologies GmbH & Co KG Closed Loop Hall Current Sensor CYHCS-D4C This Hall Effect current sensor is based on closed loop compensating principle and designed with a high galvanic isolation between primary and secondary circuits. It can be used for measurement of DC and AC current, pulse currents etc. The output of the transducer reflects

MBR0520LT1G

Abstract: SBR80520LT1G ON SEMICONDUCTOR MARKING DIAGRAM SOD-123 SBR80520LT3G
Contextual Info: MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage

MBR140SFT1G

Abstract: nrvb140s nrvb14 NRVB140SFT1G Diode SOd-123 marking cu l4fm
Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

MBRA340T3G

Abstract: DIODE marking code A34
Contextual Info: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

MBR130T1G

Abstract: MBR130T3G
Contextual Info: MBR130T1G, NRVB130T1G, MBR130T3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

B4030 AKA

Abstract: B4030G 838 ir NRVBB4030 B4030
Contextual Info: MBRB4030G, NRVBB4030T4G Preferred Device SWITCHMODE Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a proprietary barrier metal. Features •       Guardring for Stress Protection Maximum Die Size

MBRS360T3G

Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

bellcore GR-78

Abstract: sn63pb37 solder wire sn63pb37 solder wire shelf life kester 245 solder wire GR-78 sn63pb37 Sn62Pb36Ag02 ROSIN FLUX TYPE ROL0 245 Rosin Flux Cored Solder Kester 245
Contextual Info: 245 No-Clean Cored W ire Product Description Reliability Properties Kester 245 No-clean Cored Wire was developed to complement low residue liquid fluxes being used by the electronics industry. The chemistry is based on some of the same principles that have

B20100G

Abstract: B20100G diode AKA B20100G AKA B20100 B20100G on aka B20100G AKA B20100G diode AKA b20100 mbrb20100ctg b20100 g
Contextual Info: MBRB20100CTG, NRVBB20100CTT4G, NRVBBS20100CTT4G SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier is a state−of−the−art device that employs the use of the Schottky Barrier principle with a platinum barrier metal.

MBR120

Abstract: L2L SOD-123FL
Contextual Info: MBR120LSFT1G, NRVB120LSFT1G, MBR120LSFT3G Surface Mount Schottky Power Rectifier http://onsemi.com Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

b10 45g

Abstract: ON B10 45G 940 b10 45g b1045g SBRD81045 MBRD1045G 838 b10 45g SBRD81045T4G B1045 SBRB1045T4G
Contextual Info: MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G Preferred Device SWITCHMODE Schottky Power Rectifier http://onsemi.com Surface Mount Power Package SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 45 VOLTS This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art

"Toggle Switch"

Abstract: PS430 "Phase Shifters" Quadrature Hybrid PS-4-30 30 MHz phase shifters MERRIMAC ps
Contextual Info: PS-4 Series PHASE SHIFTERS, MANUAL 10 to 100 MHz / 0 to 180 Continuous Plus 0 /180 Switch / 10% Bandwidth / BNC Connectors PRINCIPAL SPECIFICATIONS Model Number PS-4-30 PS-4-*B Center Frequency, fo, MHz Usable Bandwidth, MHz 30 10 to 100 28.5 - 31.5 fo ±5%

16C450

Abstract: MS-018 PC16552 PC16C552 PLCC44 SC16C2552B SC16C2552BIA44 ST16C2552
Contextual Info: SC16C2552B 5 V, 3.3 V and 2.5 V dual UART, 5 Mbit/s max. , with 16-byte FIFOs Rev. 03 — 12 February 2009 Product data sheet 1. General description The SC16C2552B is a two channel Universal Asynchronous Receiver and Transmitter (UART) used for serial data communications. Its principal function is to convert parallel

PDS-20-600

Contextual Info: PDS-20-600 0 POWER DIVIDERS / COMBINERS 50 to 1000 MHz / 2-Way / Low Insertion Loss / Excellent Phase & Ampli. Bal./ Broadband / PC Hdr PRINCIPAL SPECIFICATIONS Model Number PDS-20-600 Frequency Freq., Range, Perform., MHz MHz 50 - 1000 50 - 150 150 - 1000

P-112

Abstract: p112 112-P P-152 P1521
Contextual Info: 0 POWER DIVIDERS / COMBINERS P-112 & P-152 1 to 400 MHz / 3-Way / Uniform Phase & Amplitude Bal. / Low Insertion Loss / Broadband / TO-5 PRINCIPAL SPECIFICATIONS Model Number Freq. Range, MHz Frequency Isolation, Insertion Phase Amplitude VSWR Internal Performance,

300g quadrature

Abstract: 300G stripline hybrid
Contextual Info: QJE-3-.300G 90 POWER DIVIDER / COMBINER 100 to 500 MHz / 500 Watt CW Capacity / Low Insertion Loss / Excellent Ampli. Bal. / Filmbrid Pkg PRINCIPAL SPECIFICATIONS Model Number Frequency Range, MHz Performance Bandwidth, MHz Amplitude Balance, dB, Max. Phase

MIL-M-28837

Contextual Info: I&Q NETWORKS IQF-4E Series Catalog and Custom Units to 300 MHz / Octave LO Bandwidth / Low Profile, Hi-Rel Package Outline of E-Size Flatpack PRINCIPAL SPECIFICATIONS Model Number IQF-4E-*B † RF/LO Center Frequency, fo 10 to 300 MHz † Bandwidth, MHz