POWERSO10RF Search Results

BTS 132 SMD

Contextual Info: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package

PD57045S

Abstract: 700B AN1294 PD57045
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,

AN1294

Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Contextual Info: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

AN1294

Abstract: PD55008 PD55008S 11 0741
Contextual Info: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION

AN1294

Contextual Info: STAP85025 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V ■ Plastic package

PD55003

Abstract: PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE

Contextual Info: PD84010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 10 W with 14.3 dB gain @ 870 MHz / 7.5 V ■ Plastic package

SMD Transistor z6

Abstract: Z9 TRANSISTOR SMD transistor 6 pin SMD Z2 smd z5 transistor transistor SMD Z2 480M PD54008 PD54008S XPD54008 XPD54008S
Contextual Info: PD54008 - PD54008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V • NEW RF PLASTIC PACKAGE

945 TRANSISTOR

Abstract: PD57045S
Contextual Info: PD57045 - PD57045S RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

945 TRANSISTOR

Abstract: 700B AN1294 PD57018 PD57018S
Contextual Info: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

PD57002-E

Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
Contextual Info: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package

PD57060s

Abstract: 945 TRANSISTOR PD57060
Contextual Info: PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

PD57006

Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50
Contextual Info: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg

transistor smd po3

Abstract: PD55003 AN1294 PD55003S
Contextual Info: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

PD55003TR

Abstract: transistor smd po3 901 704 16 08 55 AN1294 PD55003 PD55003-E PD55003S Z1033
Contextual Info: PD55003-E PD55003S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3W with 17dB gain @ 500MHz / 12.5 ■ New RF plastic package PowerSO-10RF

SMD resistor 565

Abstract: smd z5 transistor transistor smd z9 AN1294 PD55015 PD55015S
Contextual Info: PD55015 PD55015S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 14 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF

DB-85025-870

Abstract: 74L74 B45196H3106K109 PD85025-E capacitor 104k x7r 50 murata CAPACITOR 334k PD85025 code J4 diode EEVHB1V100P EXCELDRC35C
Contextual Info: DB-85025-870 RF power amplifier demonstration board for UHF OFDM radio using PD85025-E Features • Excellent thermal stability ■ Frequency: 700 - 870 MHz ■ Supply voltage: 13.6 V ■ Output power: 10 WPEP ■ Gain: 13.7 ± 0.5 dB ■ Efficiency: 40 % - 51 %

945 TRANSISTOR

Abstract: PD57030S AN1294 PD57030 le5012
Contextual Info: PD57030 PD57030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 14 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

945 TRANSISTOR

Abstract: AN1294 PD57006 PD57006S smd transistor z8 smd le transistor 945 p a4 smd transistor
Contextual Info: PD57006 PD57006S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 15 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION

STAP85050

Contextual Info: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package ■ ESD protection

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

PD55015

Contextual Info: DB-55015-165 RF POWER amplifier using 1 x PD55015 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 155 - 165 MHz ■ Supply voltage: 20V ■ Output power: 30W ■ Power gain: 14.7 ± 0.3 dB ■ Efficiency: 60% - 72%

Contextual Info: PD57060-E PD57060S-E RF Power Transistors The LdmoST Plastic FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 14.3 dB GAIN @ 945MHz 28V ■ NEW RF PLASTIC PACKAGE ■ IN COMPLIANCE WITH THE 2002/93/EC