945MHZ Search Results

AN1294

Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Contextual Info: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package

DS110505

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

gps-21

Abstract: SHP163 shp135 ask transmiter SHP112 GPS21
Contextual Info: EVALUATION KIT AVAILABLE MAX7049 High-Performance, 288MHz to 945MHz ASK/FSK ISM Transmitter General Description The MAX7049 high-performance, single-chip, ultralow-power ASK /FSK UHF transmitter operates in the industrial, scientific, medical ISM band at 288MHz to

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

Contextual Info: PD57060-E PD57060S-E RF Power Transistors The LdmoST Plastic FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 14.3 dB GAIN @ 945MHz 28V ■ NEW RF PLASTIC PACKAGE ■ IN COMPLIANCE WITH THE 2002/93/EC

M250

Abstract: SD57060 SD57060-01 0821 ST
Contextual Info: SD57060-01 RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

Contextual Info: SD57060 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed

GRM155R71H102KA01E

Abstract: GRM1555C1H820JZ01D RFPA3800SB GRM155R71H221KA01E GJM1555C1H120JB01E RFPA3800410 LQP15MN2N2B02D cap 18pF 50V 10 0603 X7R RFMD PA LTE RFPA3800
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>49dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

920MHz

Abstract: RFMD PA LTE class c tuned amplifier
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

SHP105

Abstract: SHP114 shp103 EN300-220 SHP135 shp102 928m 160FA GP1S
Contextual Info: 19-5867; Rev 0; 6/11 EVALUATION KIT AVAILABLE MAX7049 High-Performance, 288MHz to 945MHz ASK /FSK ISM Transmitter General Description The MAX7049 high-performance, single-chip, ultralow-power ASK /FSK UHF transmitter operates in the industrial, scientific, medical ISM band at 288MHz to

lte RF Transceiver 450MHz

Abstract: RFPA3800 RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

M250

Abstract: SD57060 SD57060-01
Contextual Info: SD57060-01 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M250

smd diode code 18W

Abstract: 3.40 pf variable capacitor 700B AN1294 PD57018 PD57018-E PD57018S PD57018S-E PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E PD57018S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package PowerSO-10RF

UMK105cg

Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

PD57060s

Abstract: PD57060S-E 700B AN1294 PD57060 PD57060-E PD57060STR-E PD57060TR-E PowerSO-10RF marking
Contextual Info: PD57060-E PD57060S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 14.3dB gain @ 945MHz / 28V ■ New RF plastic package

M243

Abstract: SD57060 1030F
Contextual Info: SD57060 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 13dB gain @ 945MHz ■ BeO free package ■ In compliance with the 2002/95/EC european directive Description M243 Epoxy sealed

1113ib

Contextual Info: IBMSGRF1113 IBMSGRF1113 EV Silicon-Germ anium 3-V PCS-Band: GSM Tri-Band LNA Advance Features • 945MHz/1900MHz center frequency for GSM Tri-Band • Efficiency and power management, ideal for battery mobile design • Flexible design with independent LNA input and

Contextual Info: PD57060-E PD57060S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 60W with 14.3dB gain @ 945MHz / 28V ■ New RF plastic package

S2-1111

Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 18W with 16.5dB gain @ 945MHz /28V ■ New RF plastic package

Contextual Info: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive

945 TRANSISTOR

Abstract: 700B M243 SD57030
Contextual Info: SD57030 RF power transistor the LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30W with 13dB gain @ 945MHz ■ BeO free package ■ Internal input matching ■ In compliance with the 2002/95/EC european directive

PD57045S

Abstract: 700B AN1294 PD57045 PD57045-E PD57045S-E
Contextual Info: PD57045-E PD57045S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 45W with 13dB gain @ 945MHz / 28V ■ New RF plastic package

GP422

Abstract: 700B AN1294 PD57070 PD57070-E PD57070S PD57070S-E PD57070STR-E PD57070TR-E
Contextual Info: PD57070-E PD57070S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 70W with 14.7dB gain @ 945MHz / 28V ■ New RF plastic package

Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=3.2dB at 945MHz  5V to 7V Operation