POWER TRANSISTOR SOT32 Search Results

SMD CAPACITOR L29

Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B

smd transistor 805 239

Abstract: SMD transistor L17 smd L17 npn philips power transistor bd139 philips resistor 2322 smd transistor L6 5- pin smd IC 358 transistor bd139 STR 457 transistor BLV857
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV857 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 1997 Jan 16 Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

BD234

Abstract: PNP POWER TRANSISTOR SOT-32
Contextual Info: BD234 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon Epitaxial-Base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.

C 5074 transistor

Abstract: 2N5195 2N5192 NPN POWER TRANSISTOR SOT-32 c 5074
Contextual Info: 2N5195 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Application ■ Audio, power linear and switching equipment Description 3 The device is manufactured in planar technology with “base island” layout. The resulting transistor

Contextual Info: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg BD 234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and

BD234

Contextual Info: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3

BD234

Abstract: SGS-Thomson
Contextual Info: BD234 SILICON PNP TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. 3

BD238

Abstract: bd237 equivalent bd238 equivalent 0016114E BD237 Transistor B C 458
Contextual Info: BD238 Low voltage PNP power transistor Features • Low saturation voltage ■ PNP transistor Applications ■ Audio, power linear and switching applications 3 1 SOT-32 TO-126 Description The device is manufactured in planar technology with “Base Island” layout. The resulting transistor

MJE270

Abstract: MJE271
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

MAR 733

Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor

BD330

Abstract: Q 817 BD329 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor

mje270 Transistor

Abstract: MJE271 MJE270
Contextual Info: Transys Electronics L I M I T E D MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR

bd132 equivalent

Abstract: BD132 MAR 745 TRANSISTOR BD131 transistor TO-126 Outline Dimensions BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD132 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor

MJE271

Abstract: "Power TRANSISTOR" MJE270
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company MJE270, MJE271 TO-126 SOT-32 Plastic Package MJE270 MJE271 NPN PLASTIC POWER TRANSISTOR PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

Contextual Info: Æ T SGS-THOMSON * v / i» lim i ìiì» 0 © S _ BD234 SILICON PNP TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP TRANSISTOR DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and

BD179

Abstract: 0016114E JESD97 ST BD179
Contextual Info: BD179 NPN power transistor Features • NPN transistor Applications ■ General purpose switching Description 3 The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance

transistor bd442

Abstract: 0016114E BD440 BD441 BD442 JESD97 PNP POWER TRANSISTOR SOT-32
Contextual Info: BD442 PNP power transistor Features • PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

marking code W1

Abstract: BFT92 BFT92W TRANSISTOR 3358 NH35
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification May 1994 NXP Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic,

BD439

Abstract: st bd441 BD441 BD442 JESD97 BD441 an
Contextual Info: BD441 NPN power transistor Features • NPN transistor Applications ■ Linear and switching industrial equipment Description This device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance

BD230

Abstract: transistor K 2333
Contextual Info: DISCRETE SEMICONDUCTORS BD230 NPN power transistor 1999 Apr 21 Product specification Supersedes data of 1997 Mar 06 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD230 FEATURES PINNING • High current max. 1.5 A

BFR93AW

Abstract: MBG204 marking G SOT323 Transistor BFR93A
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR93AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A.

marking 1GL

Abstract: marking G SOT323 Transistor BFR92A BFR92AW
Contextual Info: Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW FEATURES DESCRIPTION • High power gain Silicon NPN transistor encapsulated in a plastic SOT323 S-mini package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A.