POWER TRANSISTOR Search Results

2SC2270

Contextual Info: SavantIC Semiconductor Product Specification 2SC2270 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High collector power dissipation APPLICATIONS ·Strobo flash applications ·Medimum power amplifier applications

2SC2582

Contextual Info: SavantIC Semiconductor Product Specification 2SC2582 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Large collector power dissipation ·High transition frequency APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter

2SA1102

Abstract: 2SC2577 pnp amplifer
Contextual Info: SavantIC Semiconductor Product Specification 2SA1102 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC2577 ·High current capability ·High power dissipation APPLICATIONS ·Audio power amplifer applications ·DC-DC converters

2sb536

Abstract: 2SB536 equivalent 2SD381 2SB536 M
Contextual Info: SavantIC Semiconductor Product Specification 2SB536 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD381 ·Low collector saturation voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching PINNING

2sa1106

Contextual Info: SavantIC Semiconductor Product Specification 2SA1106 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·High frequency ·High power dissipation APPLICATIONS ·Audio power amplifer applications ·DC-DC converters PINNING PIN DESCRIPTION 1 Base

2SB1286

Abstract: 2SD1646
Contextual Info: SavantIC Semiconductor Product Specification 2SB1286 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD1646 ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier and power driver applications

2SA1117

Abstract: "SILICON GENERAL" PACKAGE OUTLINE
Contextual Info: SavantIC Semiconductor Product Specification 2SA1117 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1

2SB974

Abstract: ITO-220
Contextual Info: SavantIC Semiconductor Product Specification 2SB974 Silicon PNP Power Transistors DESCRIPTION •With ITO-220 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplification ·Low speed power switching applications

2SA1280

Contextual Info: SavantIC Semiconductor Product Specification 2SA1280 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High breakdown voltage ·High power dissipation APPLICATIONS ·For use in low frequency power amplifier Color TV vertical deflection output

2SA766

Abstract: 2SC1450
Contextual Info: SavantIC Semiconductor Product Specification 2SA766 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·High power dissipation ·Complement to type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier PINNING see Fig.2

2SC1079

Abstract: 2SC1080 2SA679 2SA679 2SC1079
Contextual Info: SavantIC Semiconductor Product Specification 2SC1079 2SC1080 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SA679/680 ·High power dissipation APPLICATIONS ·For audio power amplifier applications PINNING see Fig.2 PIN

2SC2838

Abstract: Audio Power Amplifiers audio power amplifiers with transistors
Contextual Info: SavantIC Semiconductor Product Specification 2SC2838 Silicon NPN Power Transistors DESCRIPTION •With MT-200 package ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For high frequency power amplifiers, audio power amplifiers,switching regulators and

2N5883

Abstract: 2N5884 2N5885 2N5886
Contextual Info: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications

2SC2528

Abstract: 2SA1078
Contextual Info: SavantIC Semiconductor Product Specification 2SA1078 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC2528 ·High transition frequency ·Excellent safe operating area APPLICATIONS ·High-frequency power amplifier ·Audio power amplifiers and drivers

BDX18

Contextual Info: SavantIC Semiconductor Product Specification BDX18 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High switching speed APPLICATIONS ·LF large signal power amplification ·Suitable for series and shunt regulators, high fidelity amplifiers and power switching circuits

2sb656

Contextual Info: SavantIC Semiconductor Product Specification 2SB656 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

transistor Bc 542

Abstract: transistor bc 567
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

BD746

Abstract: BD746C BD746A BD746B
Contextual Info: SavantIC Semiconductor Product Specification BD746/A/B/C Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type BD745/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications

Contextual Info: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz

GSM repeater circuit using transistor

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

MP4007

Contextual Info: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.

Contextual Info: NPT1010 Datasheet Gallium Nitride 28V, 100W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC – 2000MHz • 100W P3dB CW power at 900MHz • 60-95 W PSAT CW power from 500-1000MHz in

AVD400

Abstract: ASI10567 818 transistor
Contextual Info: AVD400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG A The ASI AVD400 is a silicon NPN power transistor, designed for high power and low duty cycle DME and IFF applications. A 4x .062 x 45° 2xB .040 x 45° C F E D G FEATURES: I