POWER MUST OFFICE 650 Search Results

Contextual Info: THS3001 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER SLOS217B – JULY 1998 – REVISED OCTOBER 2000 D D D D D D D THS3001 D OR DGN† PACKAGE TOP VIEW High Speed – 420 MHz Bandwidth (G = 1, –3 dB) – 6500 V/µs Slew Rate – 40-ns Settling Time (0.1%)

THS3001

Abstract: THS3001CD THS3001CDGN THS3001ID THS6012 THS6022
Contextual Info: THS3001 420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIER SLOS217C – JULY 1998 – REVISED NOVEMBER 2001 D D D D D D D THS3001 D OR DGN PACKAGE TOP VIEW High Speed – 420 MHz Bandwidth (G = 1, –3 dB) – 6500 V/µs Slew Rate – 40-ns Settling Time (0.1%)

114-10004 Application Specification

Abstract: BASE TOOL AMP crimper 69710-1 TH501 TOOL 66101-3 66101-2 amp 2322M M81969/1-02 B 58290 601967-1 66566-4
Contextual Info: Catalog 1307612 Courtesy of Steven Engineering, Inc. Ÿ 230 Ryan Way, South San Francisco, CA, 94080-6370 Ÿ Main Office: 650 588-9200 Ÿ Outside Local Area: (800) 258-9200 Ÿ www.stevenengineering.com Precision Pin and Socket Contacts Revised 7-01 Introduction

PNP marking NY sot-223

Abstract: 2N4403 FZT749 TC55 TC57 TC572502ECT TC573002ECT TC573302ECT ZTX749 2N4403 diagram
Contextual Info: TC57 Line Regulator Controller Features General Description • Low Dropout Voltage: 100mV @ 650mA with FZT749 PNP Transistor • 2.7V to 8V Supply Range • Low Operating Current: 50µA Operating, 0.2µA Shutdown • Low True Chip Enable • Output Accuracy < ±2%

dial tone

Abstract: telephone dial tone detect busy tone detector VOICE RECORDER IC pabx systems VOICE RECORDER circuits PABX CMX605 5050 LED busy tone
Contextual Info: APPLICATION NOTE CMX673 Suggested Applications The CMX673 is a signal detector that operates on energy in the frequency band of about 300 to 650Hz. It’s primary use is in the detection of status tones encountered in a telephone system. These tones include dial

LED920-66-16100

Contextual Info: LED920-66-16100 TECHNICAL DATA SUPER HIGH POWER INFRARED LED Structure: 16 power LED chips, 4 x 4 parallel array Peak Wavelength: typ. 920 nm Optical Output Power: typ. 650 mW cw @ 2.0 A Package: TO-66 with silicone + epoxy resin 1 = anode 2 = cathode Absolute Maximum Ratings Tc = 25°C

Contextual Info: Data Sheet HL65014DG AIGaInP Laser Diode 647~650nm/150mW Outline Features: • Wavelength selection: 647~650nm • High optical output power: 150mW • Operating temperature: +40˚C • Small package: φ 5.6mm • Single transverse mode • TE mode oscillation

82557

Abstract: INTEL application notes intel 82557 Intel AP
Contextual Info: E AP-375 APPLICATION NOTE 82557 Test Access Port TAP Appendix November 1996 Order Number: 650145-002 12/6/96 11:03 AM 65014502.DOC INTEL CONFIDENTIAL (until publication date) Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or

NDL3325S

Contextual Info: PRELIMINARY DATA SHEET VISIBLE LASER DIODE NDL3325S 5 mW, 650 nm VISIBLE LASER DIODE HIGH OPERATING TEMPERATURE DESCRIPTION The NDL3325S is an AlGaInP 650 nm visible laser diode and especially developed for DVD applications. The newly developed Multiple Quantum Well MQW LD chip, can achieve low operating current and high operating

F372A

Abstract: GCOY6911 OSRAM* 640
Contextual Info: 650nm Resonant Cavity LED-Chip 650nm Resonant Cavity LED Die F372A Vorläufige Daten / Preliminary Data Besondere Merkmale Features • • • • • keine Schwelle hohe Leistung Kurze Schaltzeiten: 15ns Oberflächenstrahler Optimale Wellenlänge für Kunstoff-Faserübertragung Plastic optical

optocoupler HP 450 f

Abstract: HP 450 optocoupler
Contextual Info: Intelligent Power Module and Gate Drive Interface Hermetic Optocouplers Technical Data Features • Perform ance Specified Over Full M ilitary Tem perature Range: -55°C to 125°C • Fast M aximum Propagation D elays tpHL = ^50 ns, tpj^jj = 650 ns • M inim ized P ulse W idth

TL 650 ht

Contextual Info: CDC318 1-LINE TO 18-LINE CLOCK DRIVER WITH |2C CONTROL INTERFACE SCAS587B - JANUARY 1997 - REVISED MARCH 1998 High-Speed, Low-Skew 1-to-18 Clock Buffer for Synchronous DRAM SDRAM Clock Buffering Applications Output Skew, tSk(0), Less Than 250 ps Pulse Skew, tSk(P), Less Than 650 ps

TPS61087DSC

Abstract: LMK212BJ106KG-T pcb shunt TPS6108DSC GRM21BR71A106KE51 GRM21BR71C105KA01 HPA317A SON-10 TPS61087 EMK212B7105KG-T
Contextual Info: User's Guide SLVU230A – August 2008 – Revised January 2009 TPS61087EVM This user's guide describes the characteristics, operation, and use of the TPS61087EVM evaluation module EVM . This EVM contains the Texas Instruments 650-kHz/1.2-MHz, 18.5-V step-up DC-DC

Contextual Info: User's Guide SLVU265A – August 2008 – Revised October 2010 TPS61085EVM This user's guide describes the characteristics, operation, and use of the TPS61085EVM evaluation module EVM . This EVM contains the Texas Instruments 650 kHz/1.2 MHz, 18.5 V step-up DC-DC

SCS215AG

Contextual Info: SCS215AG SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A QC 23nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SL3521

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS SL3521 75dB RANGE LOGARITHMIC AMPLIFIER The SL352l Is a successive detection logarithmic amplifier capable of operating from l00MHz to 650MHz. It consists of a monolithic chip mounted on a hybrid substrate Bypassing

Contextual Info: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

DL-3147-185

Contextual Info: Ordering number : ENN6877A Red Laser Diode DL-3147-185 DL-3147-185 Red Laser Diode Features Package Dimensions Tolerance : ±0.2 Unit : mm ø5.6 – 0.025 • Short wavelength : 650 nm Typ. • Low threshold current : Ith = 25 mA (Typ.) • High operating temperature : 5 mW at 80°C

7544-1 transistor

Abstract: DL-3147-085 TE 2161
Contextual Info: Ordering number : ENN7544 Red Laser Diode DL-3147-085 DL-3147-085 Red Laser Diode Features Package Dimensions Tolerance : ±0.2 : mm • Short wavelength : 650 nm Typ. • Low threshold current : Ith = 25 mA (Typ.) • High operating temperature : 5 mW at 80°C

SCS215AJ

Contextual Info: SCS215AJ Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC LPT L <TO-263AB> (1) (2) (3) (4) lFeatures lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

Contextual Info: SCS220AE Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 20A QC 31nC TO-247 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) N/C (2) Cathode (3) Anode 3) High-speed switching possible (1) (2) (3)

Contextual Info: SCS212AGHR Datasheet SiC Schottky Barrier Diode Outline VR 650V IF 12A QC 18nC TO-220AC 1 (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

SCS215AM

Contextual Info: SCS215AM Data Sheet SiC Schottky Barrier Diode lOutline VR 650V IF 15A QC 23nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications

Laser Diode Frame Type

Abstract: DL-3107-165 DSA00162880 7567 red Laser Diode Frame Type
Contextual Info: Ordering number : ENN7567 Red Laser Diode DL-3107-165 DL-3107-165 Red Laser Diode Frame Type Features Package Dimensions 4.2 3.2 • Short wavelength : 650 nm (Typ.) • Low threshold current : Ith = 20 mA (Typ.) • High operating temperature : 5 mW at 70°C