TC55 Search Results

Contextual Info: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst

Contextual Info: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.

260-pin

Contextual Info: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.

Contextual Info: • ■ ! ■ ■ ■ ■ • '|<f TOSHIBA MIOS MEMORY PRODUCTS 8,192 WORD X 8 BIT CM OS STATIC RAM SILICON GATE C M O S T C 5 5 63 A P L-1 0, T C 5563A P L-12 T C 55 6 3 A P L -1 5 DESCRIPTIO N The TC5563APL is 65,536 bit static random access memory organized as 8,1 92 words by 8 bits

lt928

Abstract: 55328P TC55328J
Contextual Info: 3 2 ,7 6 8 W O R D x 8 B IT C M O S S TA TIC R A M D E S C R IP T IO N The TC55328P/J is a 262,144 bits high speed static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's CMOS

Contextual Info: TOSHIBA TC55V1664J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TC55V1664J/FT is a 1,048.5,'6 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and operated from a single 3.3V sjpply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.

LQFP-100

Contextual Info: TOSHIBA TC55WD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55WD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by

912BI

Contextual Info: TOSHIBA NIOS MEMORY PRODUCTS TC55329P/J-20, TC55329P/J-25 TC55329P/J-35 DESCRIPTION The TC55329P/J is a 294,912 b i t s high speed s t a tic random access memory organ ized as 32,768 words by 9 b i t s using CMOS technolo gy, and operated from a s in g le 5 -v o lt supply.

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55465P/J-20, TC55465P/J-25 TC55465P/J-35 ¡d e s c r ip t io n ] The TC55465P/J is a 262,144 b i t s high speed s t a t i c random ac c e ss memory organ ized as 65,536 words by 4 b i t s using CMOS tech n o lo g y , and operated from a s in g le 5 -v o lt supply.

TC55188

Abstract: TC55188T-25 TC55188T-20 TC55188T
Contextual Info: •»ilK 2 - W A Y 4,096 W ORDS x 18 BITS/8,192 WORDS x 18 BITS CMOS STATIC CACHE DATA RAM DESCRIPTION The TC55188T is a 147,456bits high-speed static RAM which can be user-configured either a s 2-way 4,096 words by 18 bits or as 8,192 words by 18 bits. It is provided with a byte control, on-chip

Contextual Info: TOSHIBA MOS MEMORY PRODOCTS TC55417P/J-15H, TC55417P/J-20H Id e s c r i p t i o h I The TC55417P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power

TC551001BPL-10

Abstract: TC551001BPL-7
Contextual Info: INTEGRATED TO SHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC551001 BPL / BFL / BFTL / BTRL - 70 TC551001 BPL / BFL / BFTL / BTRL - 85 TC551001 BPL/ BFL/ BFTL/ BTRL-10 DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory SRAM organized as

TC55416P-20H

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55416P-15H, TC55416P-20H ¡d e s c r i p t i o n ] The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply, Toshiba's high performance device technology provides both high speed and low power

55257

Abstract: TC55257AFL-10L apl101 TC55257APL
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TC55257APL-85L/APL-10L/APL-12L TC55257AFL-85L/AFL-1OL/AFL-12L DESCRIPTION The TC55257APL is 262,144 bit static random access memory organized as 32,768 words by 8 bits using CMOS technology, and operated from a single 5V supply. Advanced

TSOP48-P-1220-0

Abstract: TC55VBM416AFTN TC55VBM416AFTN55
Contextual Info: TC55VBM416AFTN55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words

TC55V400AFT-55

Contextual Info: TC55V400AFT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V400AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6

tc55b328

Contextual Info: TOSHIBA TC55B328P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The T C 5 5 B 3 2 8 P /J is a 2 6 2 ,1 4 4 oit high speed B iC M O S static random access m e m ory organized as 3 2 ,7 6 8 w o rd s by 8 bits and op erated from a single 5V supply. Toshiba's B iC M O S tech nolog y and advanced circuit design enable high speed operation.

a12t

Abstract: TC5563APL-15L TC5563APL-12L c0ee
Contextual Info: 8,192 WORD X 8 BIT CMOS STATIC RAM iDESCRI PTIONl The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz

TC551001APL

Abstract: TC551001AF 324GND toshiba lv 104
Contextual Info: TOSHIBA TC551001APL/AFL/AFIL/ATRL-70L/85L/10L LV SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­

tc55257cfl

Contextual Info: TOSHIBA TC55257CPiyCFL/CSPL/CFTL/CTRIr70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPL is a 262,14^ b t CMOS static random access memory organized as 32,768 words by 8 oits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of

Marking 723 3pin

Abstract: SOT89 MARKING CODE XO 4.5V TO 100V INPUT REGULATOR
Contextual Info: Semiconductor, Inc TC55 Series LOW DROPOUT POSITIVE VOLTAGE REGULATOR FEATURES GENERAL DESCRIPTION • The TC55 Series is a collection of CMOS low dropout positive voltage regu lators which can sou rce u p to 250mA of current with an extremely low input-output voltage differen­

TC551001a

Contextual Info: TOSHIBA TC 551001APL/AFL/AFnyATRL-70L/85L/10L LI SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­

TC55-20

Contextual Info: “ Semiconductor, Inc. TC55 Series LOW DROPOUT POSITIVE VOLTAGE REGULATOR FEATURES GENERAL DESCRIPTION • The TC55 Series is a collection of CMOS low dropout positive voltage regulators which can source up to 250mA of current with an extremely low input-output voltage differen­

TC552570

Contextual Info: TOSHIBA TC55257CPI/CFVCSPI/CFTI/CTRI-85L/10L SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description T h e T C 5 5 2 5 7 C P I is a 2 6 2 ,1 4 4 bit C M O S static random acce ss m e m ory organized as 3 2 ,7 6 8 w o rd s by 8 bits and operated from a