POLYSILICON RESISTOR Search Results

BLW898

Abstract: philips resistor 2322 156 795-820 a 1757 transistor SOT171 Tekelec TO
Contextual Info: Philips Semiconductors Product specification UHF linear power transistor BLW898 FEATURES PINNING SOT171A • Internal input matching for wideband operation and high power gain PIN • Polysilicon emitter ballasting resistors for an optimum temperature profile

smd transistor pnp 591

Abstract: smd transistor xf philips 2322 734 transistor bd139 philips SMD resistor 805 smd transistor 912 smd L17 npn bd139 smd SMD transistor L17 912 smd transistor
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV857 PINNING SOT324B • Internal input matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum temperature profile

bvc62

Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum

fusible resistor

Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
Contextual Info: Fusible Links  June 1995 Features Applications • Made with Polysilicon one minimum square ~ 50W • Resistor Trimming • Programming Applications • Easy and Fast Tester Programmable (~10 ms) • Device Identification / Serial Number • Typical Power Supply Required for 2 µm width:

variable resistor 5k

Abstract: AN1425 Fixed resistor 10K variable resistor 0.5 a dcp 5k variable resistor variable resistor 47
Contextual Info: Get Precision Performance from a Digitally Controlled Potentiometer DCP Application Note September 29, 2008 Typical resistance accuracy of the polysilicon DCP is in ±20% range. However, the relative accuracy or matching of the resistive elements in the particular resistor array is

fusible

Abstract: fusible fuse resistor Links passivation resistor trimming
Contextual Info: Fusible Links  October 1995 Features Applications • • • • • • • Made with Polysilicon one minimum square ~ 50ohms Easy and Fast Tester Programmable (~10 ms) Typical Power Supply Required for 2 µm width: 10 volts Proven Reliability Resistor Trimming

AN1425

Abstract: variable resistor 100k with 3 terminals ISL22317
Contextual Info: Get Precision Performance from a Digitally Controlled Potentiometer DCP Application Note June 5, 2009 Typical resistance accuracy of the polysilicon DCP is in ±20% range. However, the relative accuracy or matching of the resistive elements in the particular resistor array is

polysilicon

Abstract: Thin Film Resistors SiCr analog polysilicon resistor Thin Film Resistors SiCr
Contextual Info: Low TCR Precision Polysilicon Resistors  June 1995 Description Features • TCR less than 100 ppm/°C, -40 to +85°C . • Target sheet resistance between 300 and 500Ω/sq. (depending on process used). • Contact resistance typically less than 100Ω (for

polysilicon

Abstract: Thin Film Resistors SiCr Thin Film Resistors SiCr analog
Contextual Info: Low TCR Precision Polysilicon Resistors  February 1996 Description Features • • • • • • • TCR less than 100 ppm/°C, -40 to +85°C . Target sheet resistance between 250 and 500Ω/sq. (depending on process used). Contact resistance typically less than

acs 721

Abstract: 24-Pin Plastic DIP
Contextual Info: NEC JIPD4363 16,364 X 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The fiPD4363 is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors makes

Contextual Info: NEC NEC Electronics Inc. PPD4363B 16,384 X 4-Bit Static CMOS RAM Description Pin Configuration The /JPD4363B is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and N-channel memory cells with polysilicon resistors

NEC 28PIN DIP

Contextual Info: SEC fiPD43258A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /iPD43258A is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to

polysilicon resistor

Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107
Contextual Info: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device

Contextual Info: NEC JUPD4363 16,364 x 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The iiPD4363 is a 16,384-word by 4-bit static RAM fabricated with advanced silicon-gate technology. A unique design using CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors makes

Contextual Info: SEC fiPD43256B 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configuration The /JPD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to

d43256agx

Contextual Info: MEC JUPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The jtPD43256A is a 32,768-word by 8-bit static RAM fabricated with advanced siiicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make

PD4361

Abstract: UPD4361
Contextual Info: fiPD4361 65,536 X 1-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The ftPD4361 is a 65,536-word by 1-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the ¿¿PD4361 a high­

d431000ag

Contextual Info: SEC JJPD431000A 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The pPD431000A is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the /JPD431000A a high­

Contextual Info: SEC JJPD43253B 65,536 x 4-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The ¿JPD43253B is a 65,536-word by 4-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells with polysilicon resistors make the /JPD43253B a high­

Contextual Info: JHPD43259A 32,768 X 9-Bit Static CMOS RAM W Æ jW NEC Electronics Inc. Description Pin Configuration The /JPD43259A is a 32,768-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to

PD43256A

Abstract: D43256AG 43256ac D43256A C-15LL D43256 upd43256a
Contextual Info: NEC ffPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The #iPD43256A is a 32,768-word by 6 -bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make

d43256ac

Abstract: upd43256a 43256A 83IH-W07A C-15L d43256a 0/JJPD43256A
Contextual Info: SEC ffPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The fiPD43256A is a 32,768-word by 8-bit static RAM fabricated with advanced sllicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make

D43256B

Abstract: D43256
Contextual Info: NEC JHPD43256B 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The f j PD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to

Contextual Info: IRFU410A Advanced Power MOSFET IRFU410A B V • Improved Inductive Ruggedness ■ Rugged Polysilicon Gate Cell Structure ■ Fast Switching Times ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Improved High Temperature Reliability