DS00107
Abstract: ic1a polysilicon resistor High Speed Amplifiers IC 1A
Contextual Info: HJW Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJW is a high voltage version of the RF-HJ double polysilicon trench isolated complementary bipolar process with high Bvebo > 4.5 V, suitable for very high linearity applications. Key parameters minimum geometry device
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ds00107ic1apolysilicon resistorhigh speed amplifiers+1ic 1a
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polysilicon resistor
Abstract: High Speed Amplifiers Complementary Bipolar Process vertical PNP DS00107
Contextual Info: HJV Complementary Bipolar Process Data Sheet DS00107 / June 2010 HJV is a high voltage version of the RF- HJ double polysilicon trench isolated complementary bipolar process, optimized for very high linearity applications. Key parameters minimum geometry device
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ds00107polysilicon resistorhigh speed amplifierscomplementary bipolar process+1vertical pnp
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2417K4A
Abstract: EIA-625 GR-253-CORE
Contextual Info: Data Sheet, Rev. 1 August 2001 NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver • TTL signal-detect output ■ Low power dissipation ■ Single 3.3 V power supply ■ LVPECL/CML compatible data inputs and CML compatible data outputs ■ ■ Operating temperature range: 0 °C to
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2417k4arj-45oc-48f3201+4ds00-107opto-1ds00-107optoeia-625gr-253-core
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2417K4A
Abstract: EIA-625
Contextual Info: Advance Data Sheet January 2000 NetLight 2417K4A 1300 nm Laser 2.5 Gbits/s Transceiver • Low power dissipation ■ Single 3.3 V power supply ■ LVPECL/CML compatible data inputs and CML compatible data outputs ■ ■ Operating temperature range: 0 °C to
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2417k4arj-45oc-4810-pin+2ds00-107optoeia-625
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