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    POLYFET RF DEVICES Search Results

    POLYFET RF DEVICES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EP1800ILC-70
    Rochester Electronics LLC EP1800 - Classic Family EPLD PDF Buy
    EP1800GM-75/B
    Rochester Electronics LLC EP1800 - Classic Family EPLD PDF Buy
    EP1810GC-35
    Rochester Electronics LLC EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Commercial PDF Buy
    EP910DI-35
    Rochester Electronics LLC EP910 - Classic Family EPLD, Logic,450 Gates,24 Macrocells PDF Buy
    EP610DI-30
    Rochester Electronics LLC EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells PDF Buy

    POLYFET RF DEVICES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LK141

    Abstract: 60W VHF TV RF amplifier
    Contextual Info: An Introduction to Polyfet RF Devices Who is Polyfet RF Devices? Established in 1987, Polyfet RF Devices is a California based manufacturer of broadband LDMOS, VDMOS, and GaN power transistors and power modules. Polyfet’s Financials • • • • • Private corporation


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    iso90005208a50vdc4q2012+2lk14160w vhf tv rf amplifier PDF

    Contextual Info: polyfet rf devices F1027 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended


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    f1027 PDF

    Contextual Info: polyfet rf devices F1170 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" process features gold metal for greatly extended


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    f11701110avenidaacaso PDF

    Contextual Info: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


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    f10061110avenida PDF

    Contextual Info: polyfet rf devices F1020 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended


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    f102072410md000135 PDF

    Contextual Info: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended


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    f2046\gs12v1110avenidaacaso724100e PDF

    Contextual Info: polyfet rf devices F3002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended


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    f30027241gcn1110avenidaacaso PDF

    Contextual Info: polyfet rf devices F1019 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


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    f10191110avenida PDF

    Contextual Info: polyfet rf devices F1240 PATENTED GOLD METAUZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended


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    f12401110avenidaacaso7241am PDF

    Contextual Info: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended


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    f2201s PDF

    Contextual Info: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended


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    f10771110avenidaacaso7241am PDF

    Contextual Info: polyfet rf devices F2003 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended


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    f2003vgs13v PDF

    Contextual Info: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended


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    f1001c1110avenidaacaso PDF

    Contextual Info: polyfet rf devices F1174 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended


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    f1174c0d0g177241dd1 PDF

    Contextual Info: polyfet rf devices F1065 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


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    f106572410chd0dd151 PDF

    Contextual Info: polyfet rf devices F1002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended


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    f1002 PDF

    Contextual Info: polyfet rf devices F1001 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


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    f1001 PDF

    Contextual Info: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended


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    f1260724100t PDF

    Contextual Info: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


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    f2202s1110avenidaacaso PDF

    Contextual Info: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


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    f1207060qfeo PDF

    Contextual Info: polyfet rf devices F2001S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


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    f2001s724100e PDF

    Contextual Info: polyfet rf devices F1410 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended


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    f1410ddd02d7 PDF

    Contextual Info: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended


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    f10631110avenidaacaso PDF

    F3003

    Contextual Info: POLYFET R F DEVICES BbE D • VamOM ODQQQScJ ^ F3003 POLYFET RF DEVICES General Description PATENTED GOLD METALIZED SILICON . RF POWER MOSFET Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown,


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    f3003 PDF