POLYFET RF DEVICES Search Results
POLYFET RF DEVICES Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| EP1800ILC-70 | Rochester Electronics LLC | EP1800 - Classic Family EPLD |
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| EP1800GM-75/B | Rochester Electronics LLC | EP1800 - Classic Family EPLD |
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| EP1810GC-35 | Rochester Electronics LLC | EP1810 - Classic Family EPLD, Logic, 900 Gates, 48 Macrocells, 35ns, Commercial |
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| EP910DI-35 | Rochester Electronics LLC | EP910 - Classic Family EPLD, Logic,450 Gates,24 Macrocells |
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| EP610DI-30 | Rochester Electronics LLC | EP610 - Classic Family EPLD, Logic,300 Gates,16 Macrocells |
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POLYFET RF DEVICES Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
LK141
Abstract: 60W VHF TV RF amplifier
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Original |
iso90005208a50vdc4q2012+2 | |
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Contextual Info: polyfet rf devices F1027 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended |
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f1027 | |
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Contextual Info: polyfet rf devices F1170 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" process features gold metal for greatly extended |
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f11701110avenidaacaso | |
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Contextual Info: polyfet rf devices F1006 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended |
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f10061110avenida | |
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Contextual Info: polyfet rf devices F1020 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended |
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f102072410md000135 | |
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Contextual Info: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended |
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f2046\gs12v1110avenidaacaso724100e | |
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Contextual Info: polyfet rf devices F3002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended |
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f30027241gcn1110avenidaacaso | |
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Contextual Info: polyfet rf devices F1019 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended |
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f10191110avenida | |
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Contextual Info: polyfet rf devices F1240 PATENTED GOLD METAUZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" 1111 process features gold metal for greatly extended |
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f12401110avenidaacaso7241am | |
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Contextual Info: polyfet rf devices F2201S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended |
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f2201s | |
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Contextual Info: polyfet rf devices F1077 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"tm process features gold metal for greatly extended |
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f10771110avenidaacaso7241am | |
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Contextual Info: polyfet rf devices F2003 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"ta process features gold metal for greatly extended |
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f2003vgs13v | |
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Contextual Info: polyfet rf devices F1001C PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1111 process features gold metal for greatly extended |
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f1001c1110avenidaacaso | |
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Contextual Info: polyfet rf devices F1174 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" ^ process features gold metal for greatly extended |
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f1174c0d0g177241dd1 | |
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Contextual Info: polyfet rf devices F1065 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
f106572410chd0dd151 | |
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Contextual Info: polyfet rf devices F1002 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“1 process features gold metal for greatly extended |
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f1002 | |
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Contextual Info: polyfet rf devices F1001 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
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f1001 | |
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Contextual Info: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended |
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f1260724100t | |
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Contextual Info: polyfet rf devices F2202S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
f2202s1110avenidaacaso | |
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Contextual Info: polyfet rf devices F1207 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
f1207060qfeo | |
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Contextual Info: polyfet rf devices F2001S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
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f2001s724100e | |
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Contextual Info: polyfet rf devices F1410 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
f1410ddd02d7 | |
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Contextual Info: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
f10631110avenidaacaso | |
F3003Contextual Info: POLYFET R F DEVICES BbE D • VamOM ODQQQScJ ^ F3003 POLYFET RF DEVICES General Description PATENTED GOLD METALIZED SILICON . RF POWER MOSFET Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown, |
OCR Scan |
f3003 | |