F1063 Search Results
F1063 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| F1063 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original | 32.15KB | 2 | ||
| F10631 | Fairchild Semiconductor | High Speed Dual D Flip-Flop | Original | 73.7KB | 3 |
F1063 Price and Stock
ITT Interconnect Solutions DPXAMA-F-106-33S-F0- Bulk (Alt: DPXAMA-F-106-33S-F0) |
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DPXAMA-F-106-33S-F0 | Bulk | 18 Weeks | 10 |
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ITT Interconnect Solutions DPXBNA-F106-34S-01-F0- Bulk (Alt: DPXBNA-F106-34S-01-F0) |
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DPXBNA-F106-34S-01-F0 | Bulk | 19 Weeks | 10 |
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Samtec Inc S1SS-08-28-GF-10.63-L1Cable Assembly Discrete Wire 28AWG 0.27m 8Position Discrete Wire Housing to 8Position Discrete Wire - Bulk (Alt: S1SS-08-28-GF-10.63-L1) |
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S1SS-08-28-GF-10.63-L1 | Bulk | 2 Weeks, 5 Days | 1 |
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ITT Interconnect Solutions DPXAMA-F106-34S-F0- Bulk (Alt: DPXAMA-F106-34S-F0) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DPXAMA-F106-34S-F0 | Bulk | 18 Weeks | 10 |
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DPXAMA-F106-34S-F0 | Bulk | 10 |
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Samtec Inc SFSD-07-28-F-10.63-DL-NUSCable Assembly Discrete Wire 0.27m 14 POS Discrete Wire Housing to 14 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: SFSD-07-28-F-10.63-DL-NUS) |
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SFSD-07-28-F-10.63-DL-NUS | Bulk | 2 Weeks, 1 Days | 1 |
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F1063 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
F1063Contextual Info: polyfet rf devices F1063 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1063 | |
ilh25Contextual Info: F10231 • F10631 HIGH SPEED DUAL D FLIP-FLOP F10K VOLTAGE COMPENSATED ECL DESCRIPTION - The F10231/F10631 contains two master/slave D-type flip-flops. The internal clock is the OR of two clock inputs, one common to both flip-flops. The OR clock permits the use of one input as a clock pulse and the other as an active LOW enable. |
OCR Scan |
f10231f10631f10231/f10631ilh25 | |
02NG
Abstract: F10231 F10631
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OCR Scan |
f10231f10631f10231/f106311x222+1 | |
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Contextual Info: polyfet rf devices F1063 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1"1 process features gold metal for greatly extended |
OCR Scan |
f10631110avenidaacaso | |
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Contextual Info: polyfet rf devices F1063 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f1063 | |
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Contextual Info: F102311* F10631^ HIGH SPEED DUAL D FLIP-FLOP F10K VOLTAGE COMPENSATED ECL DESCRIPTION - The F10231/F10631 contains two master/slave D-type flip-flops. The internal clock is the O R of two clock inputs, one common to both flip-flops. The O R clock permits the use of one input a s a clock pulse and the other a s an active LO W enable. |
OCR Scan |
f102311f10631f10231/f106311x222 | |
220v AC voltage stabilizer schematic diagram
Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
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Original |
p390-ndp465-ndp466-ndp467-nd+14 | |
LC1 D35
Abstract: C10681
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Original |
c/220fa10328fa10304fa10305+5 |