F2001S Search Results
F2001S Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| F2001S | Polyfet RF Devices | FET, Enhancement, ID 0.8 A | Original | 35.39KB | 2 |
F2001S Price and Stock
Samtec Inc SEAF-20-01-S-08-1-RA-K-TR.050 SEARAY HIGH-SPEED |
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SEAF-20-01-S-08-1-RA-K-TR |
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SEAF-20-01-S-08-1-RA-K-TR | Tape & Reel | 7 Weeks, 3 Days | 75 |
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SEAF-20-01-S-08-1-RA-K-TR | 1 |
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Samtec Inc SEAF2001S042RAGPKTR.050 SEARAY HIGH-SPEED HI |
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SEAF2001S042RAGPKTR |
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Samtec Inc SEAF-20-01-S-06-2-RA-GP-TRThis open pin field array socket features a 1.27 mm x 1.27 mm pitch grid with up to 500 total I/Os. The rugged Edge Rate® contact system is signal integrity optimized with solder charged terminations for ease of processing. SEAF is a 28+ Gbps performance |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEAF-20-01-S-06-2-RA-GP-TR |
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SEAF-20-01-S-06-2-RA-GP-TR | Tape & Reel | 6 Weeks, 5 Days | 100 |
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SEAF-20-01-S-06-2-RA-GP-TR | 1 |
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SEAF-20-01-S-06-2-RA-GP-TR | 9 Weeks | 1 |
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Samtec Inc SEAF2001S061RAGPKTR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SEAF2001S061RAGPKTR |
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Buy Now | ||||||||
Samtec Inc SEAF-20-01-S-08-2-RA-GP-TRThis open pin field array socket features a 1.27 mm x 1.27 mm pitch grid with up to 500 total I/Os. The rugged Edge Rate® contact system is signal integrity optimized with solder charged terminations for ease of processing. SEAF is a 28+ Gbps performance |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SEAF-20-01-S-08-2-RA-GP-TR |
|
Buy Now | ||||||||
|
SEAF-20-01-S-08-2-RA-GP-TR | Tape & Reel | 7 Weeks, 3 Days | 75 |
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Buy Now | |||||
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SEAF-20-01-S-08-2-RA-GP-TR | 1 |
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Buy Now | |||||||
F2001S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: polyfet rf devices F2001S PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
f2001s724100e | |
F2001SContextual Info: polyfet rf devices F2001S General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
f2001s |