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    724100T Search Results

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    Contextual Info: polyfet rf devices F1415 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon D M O S designed specifically for R F applications. Immune to forward and reverse bias secondary breakdown "Polyfet"process features gold metal for greatly extended


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    f1415724100t00002q7241gch PDF

    Contextual Info: polyfet rf devices F1260 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1“ process features gold metal for greatly extended


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    f1260724100t PDF

    Contextual Info: polyfet rf devices F2002 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended lifetime. Low output capacitance


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    f2002dv36-2v1110avenida PDF

    Contextual Info: polyfet rf devices F2046 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended


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    f2046\gs12v1110avenidaacaso724100e PDF