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    RS Pro 2035711 (EPO884-P)

    CAPACITOR MOUNTING CLIP FOR USE WITH 45MM DIA. CAPACITORS 45MM NYLON
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    RS 2035711 (EPO884-P) Bulk 5
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    • 10 $2.10
    • 100 $1.89
    • 1000 $1.89
    • 10000 $1.89
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    YAGEO Corporation CC0402JRNPO88BN220

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics CC0402JRNPO88BN220 9,603
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    PO88 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    circuit diagram of Tri-State Buffer using CMOS

    Abstract: verilog code for UART with BIST capability block diagram for UART with BIST capability tri state AT28 vhdl code for flip-flop vhdl pid verilog code pid controller free vhdl code for usart
    Contextual Info: Features • 0.5 µm Drawn Gate Length 0.45 µm Leff Sea-of-Gates Architecture with • • • • • Triple-level Metal Embedded E2 Memory up to 256 Kb 3.3V Operation with 5.0V Tolerant Input and Output Buffers High-speed, 200 ps Gate Delay, 2-input NAND, FO = 2 Nominal


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    10T/100 ATL50/E2 1173D 11/99/1M circuit diagram of Tri-State Buffer using CMOS verilog code for UART with BIST capability block diagram for UART with BIST capability tri state AT28 vhdl code for flip-flop vhdl pid verilog code pid controller free vhdl code for usart PDF

    ATL35

    Abstract: CL11 PO22 PO33 PO44 PO55 ATL35/208
    Contextual Info: ATL35 I/O Buffer Cell Library-1.0-12/97 ATL35 0.35µ I/O Buffer Cell Library I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-Sections . 8-2


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    ATL35 CL11 PO22 PO33 PO44 PO55 ATL35/208 PDF

    AOI222

    Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
    Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    5962-01B01 4138E AOI222 AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter PDF

    atmel 216

    Abstract: ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state ATL35 atmel 334 20PCI atmel h 952
    Contextual Info: Features • High-speed - 150 ps Gate Delay - 2-input NAND, FO = 2 nominal • Up to 2.7 Million Used Gates and 976 Pins • System Level Integration Technology – Cores: ARM7TDMI and AVR RISC Microcontrollers, OakDSP™ and LodeDSPCores™, 10T/100 Ethernet MAC, USB and PCI Cores


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    10T/100 ATL35 0802E 10/99/0M atmel 216 ECL IC NAND CQFP 256 PIN actel Atmel 642 PO22 tri state atmel 334 20PCI atmel h 952 PDF

    PO77

    Contextual Info: ATL25 I/O Buffer Cell Library - Preliminary - 1.1 - 09/99 ATL25 0.25µ I/O Buffer Cell Library Preliminary I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-sections. 8-2


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    ATL25 PO77 PDF

    Contextual Info: PO11 ATL25 CMOS Gate Array cell data sheets 4.0 Description: Tristate output buffer, 2mA drive. Characterization: 25C, 3.3v, Nominal Process Cell area sites : 0.0 Pin caps(pF): AO=0.060, E0=0.060 Typical delay times (slope in ns/pF; intercept in ns; input transition = 0.600ns):


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    ATL25 600ns) PDF

    PO77F

    Abstract: PO55F 090569 PO55V 24236 PO11F 328-529 po11s PX2L PO22
    Contextual Info: ATL35 I/O Buffer Cell Library-1.4-09/99 ATL35 0.35µ I/O Buffer Cell Library I/O Buffer Naming Convention . 8-2 I/O Site: Pad and Sub-Sections . 8-2


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    ATL35 PO22V5 PO44V5 PO77F PO55F 090569 PO55V 24236 PO11F 328-529 po11s PX2L PO22 PDF

    PO88

    Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
    Contextual Info: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:


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    250MHz 220MHz 800MHz 5962-01B01 PO88 ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5 PDF

    TEMIC PLD

    Abstract: PRU10 PRD8 buffer 8x Structure of D flip-flop DFFSR AOI222 AOI2223 AOI2223H AOI222H MH1099
    Contextual Info: MH1 1.6 Million gates Sea of Gates / Embedded Arrays 1. Description The MH1 Series Gate Array and Embedded Array families from TEMIC are fabricated in a 0.35µ CMOS process, with up to 3 levels of metal. This family features arrays with up to 1.6 million routable gates and 600 pins. The


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    transistor P239

    Abstract: R33PI transistor 4287 AB P239 9 318 TI P272 w29 transistor P069 P04368 p055 IQB96
    Contextual Info: The FPID Family Data Sheet Features Description Device I-Cube's family of FPID devices is available in a variety of I /O densities, ranging from 96 to 320 usable ports. The part number reflects the number of usable I/O s in the device. This family, from the


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    /391L /416L IQ240B /304L /208L IQ160 FP/208L IQ128B /184L FP/184L transistor P239 R33PI transistor 4287 AB P239 9 318 TI P272 w29 transistor P069 P04368 p055 IQB96 PDF

    Transistor Equivalent list po55

    Abstract: atmel 938 on digital code lock using vhdl mini pr credence tester 2042B atmel 532 atmel 422 bsu 479 atmel 424 2042B-ASIC
    Contextual Info: ATL25 Series . Design Manual Table of Contents Section 1 ATL25 Series ASIC. 1-1 1.1 1.2


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    ATL25 2042B-ASIC Transistor Equivalent list po55 atmel 938 on digital code lock using vhdl mini pr credence tester 2042B atmel 532 atmel 422 bsu 479 atmel 424 PDF

    I-CUBE

    Abstract: 2P034 P001 pb416 PO88 TPA 4863 A18K tq52 P046 P009
    Contextual Info: & l •Cube IQ Family Data Sheet Update IQ96, IQ64B, IQ48, IQ32B Features Description • • These additional members in the IQ previously called FPID family are based on 0.6|im CMOS Process. • • • • • 32, 48, 64 and 96 I/O Ports SRAM-based Programming for In-system


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    IQ64B, IQ32B I-CUBE 2P034 P001 pb416 PO88 TPA 4863 A18K tq52 P046 P009 PDF

    Transistor Equivalent list po55

    Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
    Contextual Info: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to


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    PO22

    Abstract: PO-99 PO44 ATL35 PO33 PO55 CMOS GATE ARRAY AO40
    Contextual Info: PO11 ATL35 CMOS Gate Array cell data sheets 1.0 DESCRIPTION: Tristate output buffer, 2mA drive Truth Table: AO E0 PO11 E0 A0 E0 | P -X | Z 1 | 0 1 1 | 1 P E0 pchn2pad_x1 I1 AO AO gateP gateN outputDRVS1 I3 P I2 nchn2pad_x1 / $Revision: 1.35 $


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    ATL35 25degC PO22 PO-99 PO44 PO33 PO55 CMOS GATE ARRAY AO40 PDF