PO25C Search Results

BUK545-50A

Abstract: 1E05 BUK545 BUK545-50B
Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK543-60A/B Logic level _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

transistor 746

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK545-60A/B Logic level GENERAL DESCRIPTION N-channe! enhancement mode logic level fietd-effect power transistor in a plastic full-pack

BUK454-400B

Abstract: BUK454-400A T0220AB
Contextual Info: 2 SE D N AMER PHI LIP S/DISCRET E ^53*131 ODSQMbO 2 B U K 454-400A B U K 454-400B P o w erM O S tra n s isto r r - 3 ? -n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK637-600A

Abstract: BUK637-600B BUK637-600C
Contextual Info: Philips Components BUK637-600A BUK637-600B BUK637-600C PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode,

BUK452-50A

Abstract: BUK452-50B T0220AB
Contextual Info: N AMER PHI LIP S/ DI SCRETE btS3*131 002DM3Ü 4 2SE D BUK452-50A BUK452-50B PowerMOS transistor T - 37-1/ GENERAL DESCRIPTION N-channel enhancement mode fiefd-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

T3D DIODE

Abstract: T3D 45 diode T3D 55 diode T3D 18 DIODE Diode T3D 03 Diode T3D 35 dt t3d 13 BUK552 BUK552-100A BUK552-100B
Contextual Info: N AUER PHILIPS/DISCRETE blE D • bbSBTBl 0Q3D7AS T3Ü ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK552-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

TRANSISTOR BU2520DF

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.