Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP IC 7A Search Results

    PNP IC 7A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TTA004B
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    2SA1943
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Datasheet

    PNP IC 7A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1289

    Abstract: 2SD1580
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1580


    Original
    2SB1289 2SD1580 2SB1289 2SD1580 PDF

    Inverter high voltage power transistor

    Abstract: 2SB825 2SD1061
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061


    Original
    2SB825 2SD1061 Inverter high voltage power transistor 2SB825 2SD1061 PDF

    2SB1018A

    Abstract: 2SD1411A
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.


    Original
    2SB1018A 2SD1411A -100V; 2SB1018A 2SD1411A PDF

    2SB1255

    Abstract: 2SD1895
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -6A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD1895 APPLICATIONS


    Original
    2SD1895 -160V; -140V; 2SB1255 2SD1895 PDF

    2SB827

    Abstract: 2SD1063
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063


    Original
    2SB827 2SD1063 25itter 2SB827 2SD1063 PDF

    2SB1290

    Abstract: 2SD1833 TRANSISTOR 2SD1833
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1833


    Original
    2SB1290 2SD1833 2SB1290 2SD1833 TRANSISTOR 2SD1833 PDF

    2SA1879

    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1879 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -80(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A


    Original
    2SA1879 2SA1879 PDF

    2SA1598

    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1598 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -3.5A ·Large Current Capability-IC= -7A


    Original
    2SA1598 2SA1598 PDF

    transistor 2sb883

    Abstract: 2SB883 2SD1193
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 2000 Min @ IC= -7A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -7A


    Original
    2SD1193 -50mA, -14mA transistor 2sb883 2SB883 2SD1193 PDF

    KTB1370

    Contextual Info: SEMICONDUCTOR KTB1370 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. A P S High Collector Current : IC=-7A. B E G Low Collector-Emitter Saturation Voltage. K : VCE sat =-0.5V(Max.) at IC=-4A.


    Original
    KTB1370 KTB1370 PDF

    2SD568

    Abstract: K 4080 2SB707
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB707 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD568 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed


    Original
    2SB707 2SD568 -10mA 2SD568 K 4080 2SB707 PDF

    2sb1018

    Abstract: tag c9 240
    Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB1018 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. 1Q.3MAX. 03.g±ag FEATURES: . High Collector Current : Ic =-7A . Low Collector Saturation Voltage : vCE sat =-0-5v(Max-) at IC=-4A


    OCR Scan
    2SB1018 2SD1411 2sb1018 tag c9 240 PDF

    2SB1097

    Abstract: 2SD1588
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1588 APPLICATIONS ·Designed for low-frequency power amplifiers and low speed


    Original
    2SB1097 2SD1588 2SB1097 2SD1588 PDF

    2SD569

    Abstract: 2SB708
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB708 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD569 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed


    Original
    2SB708 2SD569 -10mA; 2SD569 2SB708 PDF

    Contextual Info: BC856 SERIES PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volt VOLTAGE POWER 330 mWatt 0.006 0.15 MIN. FEATURES 0.120(3.04) • General Purpose Amplifier Applications 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original
    BC856 -100mA BC846/BC847/BC848/BC849 2011/65/EU IEC61249 OT-23 MIL-STD-750, 2014-REV PDF

    Contextual Info: SIEMENS Single PNP Operational Amplifiers TAE 1453 TAF 1453 Features Bipolar IC • PNP input • Supply voltage range between 3 V and 36 V • Low current consumption, 0.25 mA typ. • Extremely large control range • Low output saturation voltage, almost


    OCR Scan
    VPS05122 Q67000-A2017 Q67000-A2106 PDF

    2SB1020

    Abstract: 2SD1415 2sd1415 transistor transistor 2sb1020
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •High DC C urrent Gain: hFE= 2000 Min. @IC= -3A ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415


    Original
    2SD1415 -14mA -100V; 2SB1020 2SD1415 2sd1415 transistor transistor 2sb1020 PDF

    2SD1416

    Abstract: 2SB1021
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor DESCRIPTION •High DC C urrent Gain: hFE= 2000 Min. @IC= -3A ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1416


    Original
    2SD1416 -14mA 2SD1416 2SB1021 PDF

    Contextual Info: 2SAR562F3 Datasheet PNP -6A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -6A HUML2020L3 Collector Collector Base Emitter Emitter Base lFeatures 1 Suitable for Middle Power Driver 2) Low VCE sat) VCE(sat)= -300mV(Max.) (IC/IB= -3A/ -60mA)


    Original
    2SAR562F3 HUML2020L3 -300mV -60mA) HUML2020L3" R1102A PDF

    IC 7585

    Abstract: 2sa1941 2SA1941 equivalent ISC transistor 2SC5198 transistor 2sa1941 2SC5198 transistor r55
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat =- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications


    Original
    2SA1941 2SC5198 IC 7585 2sa1941 2SA1941 equivalent ISC transistor 2SC5198 transistor 2sa1941 2SC5198 transistor r55 PDF

    2SA1941 equivalent

    Abstract: 2SA1941 2SA1941 datasheet 2SC5198 Audio Output Transistor Amplifier ISC transistor 2SC5198 transistor 2sa1941
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION •Low Collector Saturation Voltage: VCE sat =- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier applications


    Original
    2SA1941 2SC5198 -140V 2SA1941 equivalent 2SA1941 2SA1941 datasheet 2SC5198 Audio Output Transistor Amplifier ISC transistor 2SC5198 transistor 2sa1941 PDF

    BC859B-AU

    Abstract: transistor BC SERIES BC856B-AU
    Contextual Info: BC856-AU,BC857-AU,BC858-AU,BC859-AU SERIES PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 30/45/65 Volts POWER 330 mWatts SOT-23 Unit:inch mm FEATURES • General Purpose Amplifier Applications 0.120(3.04) 0.110(2.80) • Collector Current IC = -100mA • Complimentary (PNP) Devices : BC846/BC847/BC848/BC849


    Original
    BC856 BC857 BC858 BC859 -100mA BC846/BC847/BC848/BC849 FTLUHTXDOLW\V\VWHPFHUWLILFDWH76 2002/95/EC IEC61249 OT-23 BC859B-AU transistor BC SERIES BC856B-AU PDF

    Contextual Info: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.


    OCR Scan
    2SB1381 2SD2079. PDF

    2SA1185

    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1185 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min.) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -0.8V(Max.)@ IC= -7A ·Good Linearity of hFE


    Original
    2SA1185 2SA1185 PDF