PNP HFE 70 Search Results

PNP HFE 70 Result Highlights (5)

Part	Manufacturer	Description	Download
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet
TTA014	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-120 V / IC=-2.5 A / hFE=120~240 / VCE(sat)=-0.35 V / tf=65 ns / New PW-Mold	Datasheet

PNP HFE 70 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HN4A06J Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V HN4A06J	PDF
HN4A51J Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Unit: mm Audio Frequency General Purpose Amplifier Applications High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V HN4A51J	PDF
HN4A06J Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J -120V HN4A06J	PDF
Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J	PDF
Contextual Info: HN4A06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A06J Unit: mm Audio Frequency General Purpose Amplifier Applications z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A06J	PDF
HN4A51J Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V HN4A51J	PDF
KTA1517 Abstract: KTC3911 2.T transistor planar Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.	OCR Scan	KTA1517 -120V. KTC3911. 270Hz KTA1517 KTC3911 2.T transistor planar	PDF
HN3A51F Contextual Info: HN3A51F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN3A51F Unit: mm Audio Frequency General Purpose Amplifier Applications z z z z High voltage : VCEO = −120V : hFE = 200~700 High hFE Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN3A51F -120V HN3A51F	PDF
Marking 34-Q1 Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)	Original	HN4A51J -120V Marking 34-Q1	PDF
PNP Transistors Contextual Info: 40362L High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 40362L VCEV hFE 35 IC Notes VCEO 70 hFE A .05 COB Polarity PNP ICEV Power Dissipation	Original	40362L 40362L O-205AD/TO-39 07-Sep-2010 PNP Transistors	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF
2SA1048 Abstract: 2SC2458 2sa1048 transistor Contextual Info: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High voltage: VCEO = −50 V (min) • High hFE: hFE = 70~400 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1048 2SC2458 2SA1048 2SC2458 2sa1048 transistor	PDF
2SA1048 Abstract: 2SC2458 2SA1048 GR transistor 2sa1048 Contextual Info: 2SA1048 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1048 Audio Frequency Amplifier Applications • Unit: mm Small package · High voltage: VCEO = −50 V (min) · High hFE: hFE = 70~400 · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1048 2SC2458 2SA1048 2SC2458 2SA1048 GR transistor 2sa1048	PDF
2SA1049 Abstract: 2SC2459 Contextual Info: 2SA1049 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1049 Audio Frequency Amplifier Applications Unit: mm • Small package. • High breakdown voltage: VCEO = −120 V • High hFE: hFE = 200~700 • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)	Original	2SA1049 2SC2459. 2SA1049 2SC2459	PDF

2SA21 Abstract: 2SA2154 2SC6026 Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026	Original	2SA2154 2SC6026 2SA21 2SA2154 2SC6026	PDF
toshiba ic-700 Abstract: HN4B06J Contextual Info: HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: High voltage : VCEO = −120V High hFE : hFE = 200~700 Excellent hFE linearity	Original	HN4B06J -120V toshiba ic-700 HN4B06J	PDF
Contextual Info: KTA1266 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS ltd , TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION FEATURES *ExceUent Hfe Linearity :Hfe 2 =80(Typ) at Vce=-6V, Ic=-150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mA>0.95(Typ).	OCR Scan	KTA1266 -150mA. toKTC3198 -100uA cb-50V -150mA -100mA -10mA	PDF
KTA1517 Abstract: KTC3911S Contextual Info: SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700.	Original	KTA1517 -120V. KTC3911S. KTA1517 KTC3911S	PDF
HN4B06J Contextual Info: HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity	Original	HN4B06J -120V HN4B06J	PDF
Contextual Info: HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity	Original	HN4B06J	PDF
Contextual Info: HN4B06J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN4B06J Unit: mm Audio Frequency General Purpose Amplifier Applications Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200~700 z Excellent hFE linearity	Original	HN4B06J -120V	PDF
Contextual Info: SEMICONDUCTOR KTA1266 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE 2 =80(Typ.) at VCE=-6V, IC=-150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). N Complementary to KTC3198.	Original	KTA1266 -150mA KTC3198. Temperat50	PDF
kta1504s Abstract: transistor KTA1504S Contextual Info: SEMICONDUCTOR KTA1504S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTC3875S.	Original	KTC3875S. KTA1504S Transiti-55150 -100mA, -10mA kta1504s transistor KTA1504S	PDF
PNP Transistors Abstract: hFE-20 Contextual Info: 2N6575 High Voltage Silicon High Power NPN/PNP Transistors Page 1 of 1 High Voltage Silicon High Power NPN/PNP Transistors Contact Factory for complete specification. STI Type 2N6575 VCEV 700 hFE 20 IC 7.0 Notes VCEO 300 hFE A 3.0 COB 220 Industry Type 2N6575	Original	2N6575 2N6575 O-204AA/TO-3 07-Sep-2010 PNP Transistors hFE-20	PDF

PNP HFE 70 Search Results

PNP HFE 70 Result Highlights (5)

PNP HFE 70 Datasheets Context Search

HN4A06J

HN4A51J

HN4A06J

HN4A51J

KTA1517

HN3A51F

Marking 34-Q1

PNP Transistors

2SA1049

2SA1048

2SA1048

2SA1049

2SA21

toshiba ic-700

KTA1517

HN4B06J

kta1504s

PNP Transistors