2SC6026 Search Results
2SC6026 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV | Toshiba Electronic Devices & Storage Corporation | NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet |
2SC6026 Datasheets (16)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 2SC6026 | Toshiba | Transistor for Low-Frequency Small-Signal Amplification | Original | 131.61KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT | Toshiba | Japanese - Transistors | Original | 224.05KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT | Toshiba | Transistors | Original | 144.04KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT-GR,L3F | Toshiba America Electronic Components | TRANS NPN 50V 0.1A CST3 | Original | 163.36KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CTGRTPL3 | Toshiba | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026CT-Y(TPL3) | Toshiba | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 50V 100MA FSM | Original | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026-GR | Toshiba | 2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal | Original | 141.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV | Toshiba | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | Original | 256.83KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-GR | Toshiba | 2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFVGR,L3F | Toshiba Semiconductor and Storage | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 50V 0.15A VESM | Original | 162.23KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-GR(TPL3 | Toshiba | 2SC6026 - Bipolar Transistors 150mA 50V | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-Y | Toshiba | 2SC6026 - TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP General Purpose Small Signal | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-Y,L3F | Toshiba America Electronic Components | NPN TRANSISTOR VCEO50V IC0.15A H | Original | 166.33KB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026MFV-Y(TPL3) | Toshiba | 2SC6026 - Bipolar Transistors 150mA 50V | Original | 146.43KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026-Y | Toshiba | 2SC6026 - TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-1E1A, FSM, 3 PIN, BIP General Purpose Small Signal | Original | 141.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SC6026-Y(TPL3) | Toshiba | 2SC6026 - Bipolar Transistors 100mA 50V | Original | 141.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6026 Price and Stock
Toshiba America Electronic Components 2SC6026MFVGR,L3FTrans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R Automotive AEC-Q101 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC6026MFVGR,L3F | 8,000 | 8,000 |
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2SC6026MFVGR,L3F | Tape & Reel | 19 Weeks, 6 Days | 8,000 |
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2SC6026MFVGR,L3F | 8,000 | 16 Weeks | 8,000 |
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Toshiba America Electronic Components 2SC6026MFV-Y,L3F(B2SC6026MFV-Y,L3F(B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC6026MFV-Y,L3F(B | 4,760 | 1,924 |
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2SC6026MFV-Y,L3F(B | 3,808 |
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Toshiba America Electronic Components 2SC6026MFVGR,L3F(B2SC6026MFVGR,L3F(B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC6026MFVGR,L3F(B | 4,452 | 2,942 |
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2SC6026MFVGR,L3F(B | 3,561 |
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Toshiba America Electronic Components 2SC6026MFVGR,L3F(TTrans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC6026MFVGR,L3F(T | 1,790 | 100 |
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2SC6026MFVGR,L3F(T | Cut Strips | 1,790 | 1 |
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Toshiba America Electronic Components 2SC6026MFV-Y,L3F(TTrans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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2SC6026MFV-Y,L3F(T | 530 | 100 |
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2SC6026MFV-Y,L3F(T | Cut Strips | 530 | 1 |
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Search Findchips | |||||
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2SC6026MFV-Y,L3F(T | Cut Tape | 14,700 | 5 |
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Buy Now | |||||
| 2SC6026MFV-Y,L3F(T | Tape & Reel | 14,700 | 100 |
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2SC6026 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SC6026CT Category: Transistors /Bipolar Small-Signal Transistors/General Purpose Transistors Single |
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2sc6026ctc6026ct2sa2154ct16-apr-09 | |
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Contextual Info: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C) |
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2sc6026mfv2sa2154mfv | |
2SA21
Abstract: 2SA2154 2SC6026
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2sa21542sc60262sa21 | |
2SA2154MFV
Abstract: 2SC6026MFV
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2sa2154mfv2sc6026mfv | |
2SC6026CT
Abstract: 2SA2154CT
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2sc6026ct2sa2154ct | |
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Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.4 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 1 0.8 ± 0.05 1.2 ± 0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) |
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2sa2154mfv2sc6026mfv | |
2SA2154MFV
Abstract: 2SC6026MFV
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2sc6026mfv2sa2154mfv | |
missile guidance ic
Abstract: 2SA2154 2SC6026
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2sc60262sa2154missile guidance ic | |
2SC6026
Abstract: 2SA2154
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2sa21542sc6026 | |
2SA2154
Abstract: 2SC6026
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2sc60262sa2154 | |
2SA2154MFV
Abstract: 2SC6026MFV 2SA21
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2sc6026mfv2sa2154mfv2sa21 | |
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Contextual Info: 2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC6026CT General Purpose Amplifier Applications • Unit: mm High voltage and high current 0.6±0.05 0.5±0.03 Complementary to 2SA2154CT 3 2 0.25±0.03 1 Absolute Maximum Ratings (Ta = 25°C) |
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2sc6026ct2sa2154ct | |
transistor marking hy
Abstract: 2SA2154MFV 2SC6026MFV PCT 245
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2sc6026mfv2sa2154mfvtransistor marking hypct 245 | |
2SA2154MFV
Abstract: 2SC6026MFV
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2sc6026mfv2sa2154mfv | |
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2SC6026
Abstract: 2SA2154 2SA21
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2sc60262sa21542sa21 | |
2SA2154MFV
Abstract: 2SC6026MFV
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2sc6026mfv2sa2154mfv | |
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Contextual Info: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity |
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2sa2154mfv2sc6026mfv | |
2SA2154MFV
Abstract: 2SC6026MFV
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2sa2154mfv2sc6026mfv | |
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Contextual Info: 2SA2154 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154 General-Purpose Amplifier Applications Unit: mm 0.6±0.05 • Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 • Complementary to 2SC6026 |
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2sa21542sc6026 | |
2SA2154MFV
Abstract: 2SA21 2SC6026MFV 21l1A 2sc602
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2sa2154mfv2sc6026mfv2sa2121l1a+1 | |
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Contextual Info: Reliability Tests Report Product Name: 2SC6026CT Package Name: CST3 1. Thermal tests Test Item Heat resistance Reflow Temperature cycling - - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s |
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2sc6026ct | |
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Contextual Info: Reliability Tests Report Product Name: 2SC6026MFV Package Name: VESM 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Iron) Temperature cycling - Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s Preheat : 180 to 190 deg.C , 60 to 120 s |
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2sc6026mfv | |
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Contextual Info: 2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026 General-Purpose Amplifier Applications • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154 : VCEO = 50 V, IC = 100 mA (max) |
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2sc60262sa215404esented | |
TAH6N201U
Abstract: TAH8N401K 1SS361CT 1SS387CT 1SS417CT TPD4113K MT3S106
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tpd4113k/tpd4113aktpd4113k00v/1a5hzip23+7 | |