KTC3911 Search Results

KTC3911S

Abstract: hFE CLASSIFICATION Marking 24 hFE-200 KTA1517S
Contextual Info: SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700.

KTA1517

Abstract: KTC3911
Contextual Info: _ SEMICONDUCTOR TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. KTC3911 EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : Vceo=120V. • Excellent Iife Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High Ilfe • hFE=200 ~ 700.

sot 23 mark AD

Abstract: KTC3911S MARKING ADG ADG SOT23 KTc3911
Contextual Info: SEMICONDUCTOR KTC3911S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ADG 2 1 Item Marking Description Device Mark AD KTC3911S hFE Grade G G, L * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KTA1517S

Abstract: KTC3911S UA08
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3911S EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFF=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).

Contextual Info: SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES 2001. 2. 24 Revision No : 3 1/3

KTC3911S

Contextual Info: SEMICONDUCTOR KTC3911S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌHigh Voltage : VCEO=120V. E B L L DIM A B C D E G H J K L M N P ᴌExcellent hFE Linearity ᴌHigh hFE: hFE=200ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.).

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

KTA1517

Abstract: KTC3911 2.T transistor planar
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = -1 2 0 V . • Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE: hFE=200~700.

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

KTA1517S

Abstract: KTC3911S
Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ᴌHigh Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P ᴌExcellent hFE Linearity ᴌHigh hFE: hFE=200ᴕ700. 3 G A 2 D : hFE 0.1mA /hFE(2mA)=0.95(Typ.).

Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. E B L L ・Excellent hFE Linearity ・High hFE: hFE=200～700. D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 3 G A 2 H ・Low Noise : NF=1dB(Typ.), 10dB(Max.).

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

KTA1517

Abstract: KTC3911
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1517 EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : V ceo = _ 120V . • Excellent Iife Linearity DIM A B C D E G H J K L M N P : h F E 0 .1 m A /h F E (2 m A )= 0 .9 5 (T y p .).

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

KTA1517

Abstract: KTC3911S
Contextual Info: SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES High Voltage : VCEO=-120V. E B L L DIM A B C D E G H J K L M N P Excellent hFE Linearity D : hFE 0.1mA /hFE(2mA)=0.95(Typ.). 2 A 3 G High hFE: hFE=200 700.

Contextual Info: SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES ・High Voltage : VCEO=-120V. ・Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE: hFE=200～700. ・Low Noise : NF=1dB(Typ.), 10dB(Max.).