PN3563 Search Results

PN3563

Contextual Info: I V , PN3563 PN5130 PN5132 NPN SILICON RP SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3563 PN5130 PN5132 EBC fill PN3563 ABSOLUTE MAXIMUM RATINGS PN5I3Q PN5132 Collector-Base Voltage

NPN RF Amplifier

Abstract: PN3563 PN918
Contextual Info: B S M ' H C N D , ,r?royi PN3563 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 m A to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

PN3563

Abstract: PN5130 BOX69477 PN5132
Contextual Info: PN 3563 PN 5130 PN 5132 NPN SILICON RF SMALL SIGNAL TRANSISTORS CASE TO-92A THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS. PN3565 PN5130 PN5132 «V SBC PN3563 PN5130 ' PN5132 ABSOLUTE MAXIMUM RATINGS Collector-Base ^oltage

PN3563

Abstract: CBVK741B019 F63TNR PN2222N PN918
Contextual Info: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

PN3563

Contextual Info: FAIRCHILD SEM ICO ND UCT OR fl4 D E | B 4 b T b 7 4 0057414 4 | 3469674 FAIRCHILD SEMICONDUCTOR » e 84D 274 14 D m PN918/MPS918/FTS0918 PN3563/MPS3563/FTS03563 m A Schlum berger Com pany NPN Small Signal High Frequency Am plifiers & Oscillators . 15 dB Min @ 200 MHz (PN/FTS0918)

pn3563

Contextual Info: S e M i Q O N Q M P T O ^ <î. PN3563 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and m ultipliers with collector currents in the 1.0 m A to 30 m A range. Sourced from Process 43. See PN918 for characteristics. AbSOlUtG Maximum RâtinÇjS

PN3563

Abstract: PN918 PN3563 equivalent
Contextual Info: N PN3563 C TO-92 BE NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: Small Signal RF/VHF/UHF Transistors Part No. Polarity VCEO V 2N5770 MPS5179 MPSH10 MPSH11 PN3563 PN918 NPN 15 12 25 25 15 15 fT Min. @ Max. (MHz) (MHz) 900 900 650 650 600 600 1800 2000 1500 1500 VCE & IC VCE IC Cob Max. (V) (mA) (pF) 6 10 10 10 - 8 5 4

PN3563

Abstract: PN3563 equivalent PN918
Contextual Info: PN3563 C TO-92 BE NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* Symbol

PN3563

Abstract: PN2222N CBVK741B019 F63TNR PN918
Contextual Info: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

Contextual Info: PN3563 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition)

NPN RF Amplifier

Abstract: PN3563 PN918 798MHZ LS0113
Contextual Info: PN3563 Discrete P O W E R & S ig n a l Technologies National Semiconductor'“ PN3563 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics.

Contextual Info: SEM'HCNU w C Tan PN3563 NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

pn3563

Contextual Info: PN3563 PN3563 C B TO-92 E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings*

PN3563 equivalent

Abstract: 2N5770 2n918 transistor 2n918 die 2N2857 2N5179 2N918 BFY90 CMPT918 CP317
Contextual Info: PROCESS CP317 Small Signal Transistor NPN - RF Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 14.5 x 14.5 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 2.4 x 2.2 MILS Emitter Bonding Pad Area 2.4 x 2.2 MILS Top Side Metalization Al - 30,000Å

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

Contextual Info: _ _ _ . böt T > U t.SD113D 0 0 3 1 5 2 8 ISA « N S C S RF Amplifiers Devices NPN PNP NATL SEnlC0N] discrete) h fE V CE0(Sutt) »C (Volts) Min (mA) Max Min Iq ^ c e mA (MHZ) Min C#|, PF Max *T V NF (dB) @ f Package Max MHz 2N3663 12 50 20 8.0 10 700

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

2N3859

Contextual Info: Small signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VcBO v CEO v EBO ICBO V (V) (V) m *VCES MIN 18 MIN 5.0 •«c e s *'c e v MAX 500 @ VCE e i e hFE VCBC (V) (V) (lllA) VCE(SA T )@ «C Cob (V) (mA) •hfe(1kHZ) *T NF •off (PF) (MHz) (* » )

2N5381

Abstract: 2N2926 transistors TO-92 case 2N3707
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

P2N2222A

Abstract: P2N2369 PBF259 PBF259S PN2221 PN2221A PN2222 PN2222A PN2369 PN2369A
Contextual Info: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type CBO CEO EBO No. (V) (V) (V) Min Min Min 75 40 P2N2222A PD m hFE (A) 6Tc=25"c 0.625 0.8 (pA) Max «(V ) 0.01 (UA) Max 60 (V) Min

PN3563

Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Contextual Info: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700